N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION The 2SK1399 is an N-channel vertical type MOS FET which can be driven by 2.5-V power supply. The 2SK1399 is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VCR cameras and headphone stereos which need power saving.

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK1399 is an N-channel vertical type MOS FET can be driven by 2.5 V power supply. The 2SK1399 is driven by low voltage and does not require consideration of driving current, it is suitable for appliances includ

MOS Field Effect Transistor

Features ● Can be driven by a 3.0-V power source ● Not necessary to consider driving current because of it is high input impedance ● Possible to reduce the number of parts by omitting the bias resistor ● Complments the 2SJ185

Power MOSFETs-Power MOSFETs for Automotive

N-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low

N-Channel MOSFET

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N-Channel MOSFET

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N-channel MOS FET