位置：首页 > IC中文资料第6847页 > 2SK125
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.35Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 |   | ||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 30A@ TC=25℃ · Drain Source Voltage -VDSS= 30V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.03Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive | RENESAS 瑞萨 | | ||
Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive | RENESAS 瑞萨 | | ||
Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive | RENESAS 瑞萨 | | ||
Silicon N-Channel MOSFET Features Low on-resistance High speed switching Suitable for switching regulator and DC-DC converter | KEXIN 科信电子 | | ||
Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive | RENESAS 瑞萨 | | ||
Silicon N-channel Power F-MOS FET
| Panasonic 松下 | | ||
SILICON N-CHANNEL POWER F-MOS FET Silicon N-channel power F-MOS FET | Panasonic 松下 | | ||
VX Series Power MOSFET 文件：118.05 Kbytes Page：2 Pages | SHINDENGEN | | ||
isc N-Channel MOSFET Transistor 文件：828.25 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：849.22 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Silicon N Channel MOS FET | RENESAS 瑞萨 | | ||
Silicon N-Channel MOS FET | HitachiHitachi Semiconductor 日立日立公司 | | ||
Power switching MOSFET | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET 文件：109.08 Kbytes Page：10 Pages | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor 文件：317.94 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel 100-V (D-S) MOSFET 文件：1.035619 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
isc N-Channel MOSFET Transistor 文件：309.73 Kbytes Page：2 Pages | ISC 无锡固电 | |
2SK125产品属性
- 类型
描述
- 型号
2SK125
- 制造商
SHINDENGEN
- 制造商全称
Shindengen Electric Mfg.Co.Ltd
- 功能描述
VX Series Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS/瑞萨 |
24+ |
NA/ |
5919 |
原装现货,当天可交货,原型号开票 |
|||
RENESAS |
24+ |
SOT252 |
6300 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
RENESAS |
22+ |
TO-252 |
20000 |
公司只有原装 品质保证 |
|||
RENESAS/瑞萨 |
25+ |
TO-252 |
45000 |
RENESAS/瑞萨全新现货2SK1254S即刻询购立享优惠#长期有排单订 |
|||
RENESAS |
26+ |
TO-252 |
360000 |
进口原装现货 |
|||
RENESAS |
25+23+ |
TO252 |
72007 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
RENESAS/瑞萨 |
23+ |
TO-252 |
61000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
NEC |
25+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
HIT |
2023+ |
DPAK |
50000 |
原装现货 |
2SK125芯片相关品牌
2SK125规格书下载地址
2SK125参数引脚图相关
- 500t
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2SK1288
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- 2SK1285
- 2SK1284
- 2SK1283
- 2SK1280
- 2SK128
- 2SK1279
- 2SK1278
- 2SK1277
- 2SK1274
- 2SK1273
- 2SK1272
- 2SK1271
- 2SK1270
- 2SK1266
- 2SK1265
- 2SK1264
- 2SK1263
- 2SK1262
- 2SK1261
- 2SK1260
- 2SK1259
- 2SK1258
- 2SK1257
- 2SK1255
- 2SK1254STL-E
- 2SK1254S-E
- 2SK1254S
- 2SK1254L-E
- 2SK1254L
- 2SK1254(L)|2SK1254(S)
- 2SK1254
- 2SK1253
- 2SK1250
- 2SK1249
- 2SK1248
- 2SK1239
- 2SK1238
- 2SK1237
- 2SK1236
- 2SK1235
- 2SK1234
- 2SK1233
- 2SK1232
- 2SK1231
- 2SK1230
- 2SK123
- 2SK122800L
- 2SK1228
- 2SK1225
- 2SK1224-01
- 2SK1224
- 2SK1223
- 2SK1222
- 2SK1221
- 2SK1217
- 2SK1215
- 2SK1214
- 2SK1213
- 2SK1212
- 2SK1211
- 2SK121
- 2SK1204
- 2SK1203
- 2SK1202
- 2SK1201
- 2SK1200
- 2SK1199
2SK125数据表相关新闻
2SJ652-1E 绝缘栅场效应管(MOSFET)
2SJ652-1E 原装正品 现货供应
2024-3-232SD669AL-TO92NLB-C-TG_UTC代理商
2SD669AL-TO92NLB-C-TG_UTC代理商
2023-2-172SD882SL-TO92B-P-TG_UTC代理商
2SD882SL-TO92B-P-TG_UTC代理商
2023-2-82SK1485-T1
2SK1485-T1，当天发货0755-82732291全新原装现货或门市自取.
2020-9-122SK1985
2SK1985，全新原装当天发货或门市自取0755-82732291.
2019-10-302SK1985-01MR
2SK1985-01MR，全新原装当天发货或门市自取0755-82732291.
2019-10-30
DdatasheetPDF页码索引
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