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型号 功能描述 生产厂家 企业 LOGO 操作
2SK1254L

Silicon N-Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

HITACHIHitachi Semiconductor

日立日立公司

2SK1254L

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

RENESAS

瑞萨

2SK1254L

Silicon N-Channel MOS FET

Application\nHigh speed power switching •  Low on-resistance\n•  High speed switching\n•  4 V gate drive device\n   Can be driven from 5 V source\n•  Suitable for motor drive, DC-DC converter, power switch and solenoid drive;

HITACHIHitachi Semiconductor

日立日立公司

2SK1254L

Power MOSFETs

RENESAS

瑞萨

2SK1254L

丝印代码:IPAK;isc N-Channel MOSFET Transistor

文件:317.94 Kbytes Page:2 Pages

ISC

无锡固电

2SK1254L

N-Channel 100-V (D-S) MOSFET

文件:1.035619 Mbytes Page:9 Pages

VBSEMI

微碧半导体

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

RENESAS

瑞萨

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

RENESAS

瑞萨

Silicon N-Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

HITACHIHitachi Semiconductor

日立日立公司

Silicon N-Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

RENESAS

瑞萨

2SK1254L产品属性

  • 类型

    描述

  • 封装类型:

    DPAK(L)-(1)/TO-251

  • Nch/Pch:

    Nch

  • 通道数:

    Single

  • VDSS (V) 最大值:

    120

  • ID (A):

    3

  • RDS (ON)(mΩ) 最大值@4V或4.5V:

    550

  • RDS (ON)(mΩ) 最大值@10V或8V:

    400

  • Ciss (pF) 典型值:

    420

  • Vgs (off) (V) 最大值:

    2

  • VGSS (V):

    20

  • Pch (W):

    20

  • 应用:

    Industrial

  • 安装类型:

    Through Hole

更新时间:2026-5-20 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PANASONIC
2016+
SOT23
6000
全新原装现货,量大价优,公司可售样!
PANASONIC/松下
06+
SOT23
2270
一级代理,专注军工、汽车、医疗、工业、新能源、电力
25+
100
公司现货库存
25+
100
公司现货库存
HITACHI
2023+
TO-252
50000
原装现货
NEC
23+
TO-252
59890
原厂授权代理,海外优势订货渠道。可提供大量库存,详
PANASONIC
23+
NA
2804
专做原装正品,假一罚百!
PANASONIC
原厂封装
9800
原装进口公司现货假一赔百
HIT
24+
10000
PANASONIC
24+
TO-92NL
4200
只做原装正品现货 欢迎来电查询15919825718

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