| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK1254L | Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SK1254L | Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive | RENESAS 瑞萨 | | |
2SK1254L | Silicon N-Channel MOS FET Application\nHigh speed power switching • Low on-resistance\n• High speed switching\n• 4 V gate drive device\n Can be driven from 5 V source\n• Suitable for motor drive, DC-DC converter, power switch and solenoid drive; | HITACHIHitachi Semiconductor 日立日立公司 | | |
2SK1254L | Power MOSFETs | RENESAS 瑞萨 | | |
2SK1254L | 丝印代码：IPAK；isc N-Channel MOSFET Transistor 文件：317.94 Kbytes Page：2 Pages | ISC 无锡固电 | | |
2SK1254L | N-Channel 100-V (D-S) MOSFET 文件：1.035619 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | |
Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive | RENESAS 瑞萨 | | ||
Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive | RENESAS 瑞萨 | |
2SK1254L产品属性
- 类型
描述
- 封装类型：
DPAK(L)-(1)/TO-251
- Nch/Pch：
Nch
- 通道数：
Single
- VDSS (V) 最大值：
120
- ID (A)：
3
- RDS (ON)(mΩ) 最大值@4V或4.5V：
550
- RDS (ON)(mΩ) 最大值@10V或8V：
400
- Ciss (pF) 典型值：
420
- Vgs (off) (V) 最大值：
2
- VGSS (V)：
20
- Pch (W)：
20
- 应用：
Industrial
- 安装类型：
Through Hole
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
23+ |
TO-252 |
59890 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
RENESAS |
12+ |
TO-251 |
15000 |
全新原装,绝对正品,公司现货供应。 |
|||
VBSEMI/台湾微碧 |
23+ |
TO251 |
50000 |
全新原装正品现货,支持订货 |
|||
HIT |
24+ |
10000 |
|||||
25+ |
100 |
公司现货库存 |
|||||
VBSEMI |
23+ |
TO251 |
10130 |
全新 发货1-2天 |
|||
25+ |
100 |
公司现货库存 |
|||||
NEC |
26+ |
ZIP |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
HITACHI |
2023+ |
TO-252 |
50000 |
原装现货 |
|||
RENESAS/瑞萨 |
2022+ |
TO-251 |
50000 |
原厂代理 终端免费提供样品 |
2SK1254L规格书下载地址
2SK1254L参数引脚图相关
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- 5000
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2SK1254L数据表相关新闻
2SJ652-1E 绝缘栅场效应管(MOSFET)
2SJ652-1E 原装正品 现货供应
2024-3-232SD669AL-TO92NLB-C-TG_UTC代理商
2SD669AL-TO92NLB-C-TG_UTC代理商
2023-2-172SD882SL-TO92B-P-TG_UTC代理商
2SD882SL-TO92B-P-TG_UTC代理商
2023-2-82SK1485-T1
2SK1485-T1，当天发货0755-82732291全新原装现货或门市自取.
2020-9-122SK1985
2SK1985，全新原装当天发货或门市自取0755-82732291.
2019-10-302SK1985-01MR
2SK1985-01MR，全新原装当天发货或门市自取0755-82732291.
2019-10-30
DdatasheetPDF页码索引
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