位置:首页 > IC中文资料 > 2SK1254

型号 功能描述 生产厂家 企业 LOGO 操作
2SK1254

Silicon N-Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

HITACHIHitachi Semiconductor

日立日立公司

2SK1254

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

RENESAS

瑞萨

2SK1254

Silicon N Channel MOS FET

Application\nHigh speed power switching •  Low on-resistance\n•  High speed switching\n•  4 V gate drive device\n   Can be driven from 5 V source\n•  Suitable for motor drive, DC-DC converter, power switch and solenoid drive;

RENESAS

瑞萨

2SK1254

Silicon N-Channel MOS FET

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

RENESAS

瑞萨

Silicon N-Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

RENESAS

瑞萨

Silicon N-Channel MOSFET

Features Low on-resistance High speed switching Suitable for switching regulator and DC-DC converter

KEXIN

科信电子

Silicon N-Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

RENESAS

瑞萨

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

RENESAS

瑞萨

Silicon N Channel MOS FET

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

文件:109.08 Kbytes Page:10 Pages

RENESAS

瑞萨

丝印代码:IPAK;isc N-Channel MOSFET Transistor

文件:317.94 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel 100-V (D-S) MOSFET

文件:1.035619 Mbytes Page:9 Pages

VBSEMI

微碧半导体

丝印代码:DPAK;isc N-Channel MOSFET Transistor

文件:309.73 Kbytes Page:2 Pages

ISC

无锡固电

2SK1254产品属性

  • 类型

    描述

  • 封装类型:

    DPAK(L)-(1)/TO-251

  • Nch/Pch:

    Nch

  • 通道数:

    Single

  • VDSS (V) 最大值:

    120

  • ID (A):

    3

  • RDS (ON)(mΩ) 最大值@4V或4.5V:

    550

  • RDS (ON)(mΩ) 最大值@10V或8V:

    400

  • Ciss (pF) 典型值:

    420

  • Vgs (off) (V) 最大值:

    2

  • VGSS (V):

    20

  • Pch (W):

    20

  • 应用:

    Industrial

  • 安装类型:

    Through Hole

更新时间:2026-5-19 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
23+
SOT252/2.5
20000
全新原装假一赔十
RENESAS/瑞萨
25+
TO-252
45000
RENESAS/瑞萨全新现货2SK1254S即刻询购立享优惠#长期有排单订
RENESAS
05PB
SOT252/2.5
2900
全新原装进口自己库存优势
RENESAS
18+
TO-252
2000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS
26+
TO-252
360000
进口原装现货
RENESAS
25+23+
TO252
72007
绝对原装正品现货,全新深圳原装进口现货
HITACHI
25+
SOT252
2987
只售原装自家现货!诚信经营!欢迎来电
RENESAS
22+
TO-252
20000
公司只有原装 品质保证
25+
100
公司现货库存
25+
100
公司现货库存

2SK1254芯片相关品牌

2SK1254数据表相关新闻