CHOPPER SWITCHING APPLICATIONS

Application General Purpose Low Noise Low Noise High IYfsl Low Noise Controlled Resistor Swiching, Chopper Analog Switch, Chopper Application Switching choppen

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) =0.65Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL SILICON POWER MOS-FET

[FUJI] N-CHANNEL SILICON POWER MOS-FET

N-CHANNEL SILICON POWER MOS-FET

Features 1. High Speed switching 2. Low on-resistance 3. No secondary breakdown 4. Low driving power 5. High voltage

N-CHANNEL SILICON POWER MOS-FET

[FUJI] N-CHANNEL SILICON POWER MOS-FET

N-CHANNEL SILICON POWER MOS-FET

[FUJI]

N-CHANNEL SILICON POWER MOS-FET

[FUJI]

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) =0.9Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Silicon N-Channel Junction FET

Silicon N-Channel Junction FET For switching Complementary to 2SJ163 ■ Features ● Low ON-resistance ● Low-noise characteristics

Silicon N-Channel Junction FET

Silicon N-Channel Junction FET For switching Complementary to 2SJ164 ■ Features ● Low ON-resistance ● Low-noise characteristics

JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK1108 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance 1000 μS TYP. (IDSS = 100 μA) 1600 μS TYP. (IDSS = 200 μA) • Includes diode and high

JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK1109 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance 1000 μS TYP. (IDSS = 100 μA) 1600 μS TYP. (IDSS = 200 μA) • Includes diode and high

N-Channel Junction Field Effect Transistors

■ Features ● VDS (V) = 20V ● ID = 10m A ● High forward transfer admittance 1000 μs TYP. (IDSS = 100 μA) 1600 μs TYP. (IDSS = 200 μA) ● Includes diode and high resistance at G - S

Field Effect Transistor

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N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION The 2SK1109 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance 1000 µS TYP. (IDSS = 100 µA) 1600 µS TYP. (IDSS = 200 µA) • Includes diode and high resistance at G - S

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

2SK1113

2SK1113

Silicon N-Channel MOS Field Effect Transistor (MOS II.I)

high-speed, high-current switching ○ For switching regulators . Low on-resistance. : RDS (ON)=0.95Ω (typical) High forward transmission admittance. | Y's|=4.0S (Standard) Ipss=300A (max) (VDs=600V) Low leakage current. Easy to handle, enhancement type. : Vth=1.5~3.5V(Vps=10V, Ip=1mA)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

DC−DC Converter and Motor Drive Applications ● Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) ● High forward transfer admittance : |Yfs| = 2.0 S (typ.) ● Low leakage current : IDSS = 300 μA (max) (VDS = 800 V) ● Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

CHOPPER SWITCHING APPLICATIONS

Application General Purpose Low Noise Low Noise High IYfsl Low Noise Controlled Resistor Swiching, Chopper Analog Switch, Chopper Application Switching choppen

N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

DC−DC Converter and Motor Drive Applications ● Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) ● High forward transfer admittance : |Yfs| = 4.0 S (typ.) ● Low leakage current : IDSS = 300 μA (max) (VDS = 800 V) ● Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS

DC−DC Converter and Motor Drive Applications ● Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) ● High forward transfer admittance : |Yfs| = 4.0 S (typ.) ● Low leakage current : IDSS = 300 μA (max) (VDS = 800 V) ● Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK1122 is N-Channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 20 A) RDS(on)2 = 70 mΩ MAX. (VGS = 4.0 V, ID = 20 A) • Low Ciss Ci

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=40A@ TC=25℃ · Drain Source Voltage -VDSS=100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.05Ω(Max)@VGS= 10V DESCRIPTION · DC-DC converter · Battery Chargers · DC Choppers

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 40A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) =27mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK1123 is N-Channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance RDS(on)1 = 27 mΩ MAX. (VGS = 10 V, ID = 20 A) RDS(on)2 = 50 mΩ MAX. (VGS = 4 V, ID = 20 A) • Low Ciss Ciss

SILICON N CHANNEL JUNCTION TYPE

FOR ANALOG SWITCH,, CHOPPER AMPLIFIER AND SWITCHING CIRCUIT APPLICATIONS, FEATURES: . High Breakdown Voltage : V(br)gdS=-50v . Low ON Resistance : rDS(ON) = 30 Q(Max. ) (2SK113-Y) . Low Leakage : ID (oFF)=100pA(Max. ) (VdS=20V)

CHOPPER SWITCHING APPLICATIONS

Application General Purpose Low Noise Low Noise High IYfsl Low Noise Controlled Resistor Swiching, Chopper Analog Switch, Chopper Application Switching choppen

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

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Field Effect Transistor

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MOS Field Effect Transistor

Features ● Directly driven by Ics having a 5V power source. ● Not necessary to consider driving current because of its high input impedance. ● Possible to reduce the number of parts by omitting the biasresistor.

Field Effect Transistor

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N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

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丝印代码：G11；MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL MOSFET DESCRIPTION The 2SK1133, N-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. The 2SK1133 has excellent switching characteristics and is suitable for use as a high-speed switching devi

N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

N-CHANNEL SILICON POWER MOS-FET

Features ● High current ● Low on-resistance ● No secondary breakdown ● Low driving power Applications ● DC-DC converters ● Motor controllers ● General purpose power amplifier

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 15A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) =0.22Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

CHOPPER SWITCHING APPLICATIONS

Application General Purpose Low Noise Low Noise High IYfsl Low Noise Controlled Resistor Swiching, Chopper Analog Switch, Chopper Application Switching choppen

CHOPPER SWITCHING APPLICATIONS

Application General Purpose Low Noise Low Noise High IYfsl Low Noise Controlled Resistor Swiching, Chopper Analog Switch, Chopper Application Switching choppen

CHOPPER SWITCHING APPLICATIONS

Application General Purpose Low Noise Low Noise High IYfsl Low Noise Controlled Resistor Swiching, Chopper Analog Switch, Chopper Application Switching choppen

CHOPPER SWITCHING APPLICATIONS

Application General Purpose Low Noise Low Noise High IYfsl Low Noise Controlled Resistor Swiching, Chopper Analog Switch, Chopper Application Switching choppen

CHOPPER SWITCHING APPLICATIONS

Application General Purpose Low Noise Low Noise High IYfsl Low Noise Controlled Resistor Swiching, Chopper Analog Switch, Chopper Application Switching choppen

CHANNEL MOS FIELD EFFECT POWER TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

CHANNEL MOS FIELD EFFECT POWER TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

Silicon N-Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

Silicon N-Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 1.5A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) =5.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

Silicon N-Channel MOSFET

Features ● Low on-resistance ● High speed switching ● Low drive current ● No secondary breakdown ● Suitable for switching regulator and DC-DC converter

Silicon N-Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 1.5A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) =5.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

Silicon N-Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter