型号 功能描述 生产厂家&企业 LOGO 操作
2SK1152

Silicon N-Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

HitachiHitachi Semiconductor

日立日立公司

2SK1152

N-Channel 650 V (D-S) MOSFET

文件:1.08594 Mbytes Page:9 Pages

VBSEMI

微碧半导体

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

RENESAS

瑞萨

Silicon N-Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

HitachiHitachi Semiconductor

日立日立公司

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 1.5A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) =6.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

RENESAS

瑞萨

Silicon N-Channel MOSFET

Features ● Low on-resistance ● High speed switching ● Low drive current ● No secondary breakdown ● Suitable for switching regulator and DC-DC converter

KEXIN

科信电子

Silicon N-Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 1.5A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) =6.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件:317.55 Kbytes Page:2 Pages

ISC

无锡固电

Silicon N Channel MOS FET

文件:126.54 Kbytes Page:7 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件:309.36 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel 650 V (D-S) MOSFET

文件:1.086 Mbytes Page:9 Pages

VBSEMI

微碧半导体

2SK1152产品属性

  • 类型

    描述

  • 型号

    2SK1152

  • 制造商

    HITACHI

  • 制造商全称

    Hitachi Semiconductor

  • 功能描述

    Silicon N-Channel MOS FET

更新时间:2025-8-18 8:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS(瑞萨)/IDT
24+
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
HITACHI/日立
24+
TO 262 263
158173
明嘉莱只做原装正品现货
RENESAS/瑞萨
22+
TO-251
100000
代理渠道/只做原装/可含税
HITACHI
21+
SOT-252
880
原装现货假一赔十
RENESAS/瑞萨
24+
NA/
4449
原装现货,当天可交货,原型号开票
HIT
1822+
TO252
9852
只做原装正品假一赔十为客户做到零风险!!
HITACHI/日立
2024
TO-252
500153
16余年资质 绝对原盒原盘代理渠道 更多数量
RENESAS/瑞萨
24+
TO-252
1200
只做原厂渠道 可追溯货源
HIT
24+
TO-251
20000
HITACHI/日立
2022+
DPAK
48000
只做原装,原装,假一罚十

2SK1152数据表相关新闻