位置：首页 > IC中文资料第5439页 > 2SK1152
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK1152 | Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SK1152 | N-Channel 650 V (D-S) MOSFET 文件：1.08594 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | |
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | RENESAS 瑞萨 | | ||
Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | HITACHIHitachi Semiconductor 日立日立公司 | | ||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 1.5A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) =6.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | RENESAS 瑞萨 | | ||
Silicon N-Channel MOSFET Features ● Low on-resistance ● High speed switching ● Low drive current ● No secondary breakdown ● Suitable for switching regulator and DC-DC converter | KEXIN 科信电子 | | ||
Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 1.5A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) =6.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor 文件：317.55 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET 文件：126.54 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor 文件：309.36 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.086 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | |
2SK1152产品属性
- 类型
描述
- 型号
2SK1152
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
Silicon N-Channel MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
22+ |
TO-251 |
100000 |
代理渠道/只做原装/可含税 |
|||
HITACHI/日立 |
24+ |
TO 262 263 |
158173 |
明嘉莱只做原装正品现货 |
|||
RENESAS/瑞萨 |
2450+ |
TO252 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
RENESAS/瑞萨 |
2223+ |
TO-252 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
RENESAS |
26+ |
TO-252 |
360000 |
进口原装现货 |
|||
RENESAS |
6 |
TO-252 |
2890 |
||||
RENESA |
24+ |
SOT-252 |
90000 |
郑重承诺只做原装进口现货 |
|||
RENESAS/瑞萨 |
24+ |
TO252 |
28347 |
只做全新原装进口现货 |
|||
24+ |
2000 |
||||||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
2SK1152规格书下载地址
2SK1152参数引脚图相关
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2SK1152数据表相关新闻
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2SK1485-T1，当天发货0755-82732291全新原装现货或门市自取.
2020-9-122SK1985
2SK1985，全新原装当天发货或门市自取0755-82732291.
2019-10-302SK1985-01MR
2SK1985-01MR，全新原装当天发货或门市自取0755-82732291.
2019-10-30
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