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型号 功能描述 生产厂家 企业 LOGO 操作
2SK1152

Silicon N-Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

HITACHIHitachi Semiconductor

日立日立公司

2SK1152

N-Channel 650 V (D-S) MOSFET

文件:1.08594 Mbytes Page:9 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 1.5A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) =6.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

RENESAS

瑞萨

Silicon N-Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

RENESAS

瑞萨

Silicon N-Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 1.5A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) =6.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Silicon N-Channel MOSFET

Features ● Low on-resistance ● High speed switching ● Low drive current ● No secondary breakdown ● Suitable for switching regulator and DC-DC converter

KEXIN

科信电子

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

RENESAS

瑞萨

丝印代码:IPAK;isc N-Channel MOSFET Transistor

文件:317.55 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFETs

RENESAS

瑞萨

Silicon N Channel MOS FET

文件:126.54 Kbytes Page:7 Pages

RENESAS

瑞萨

丝印代码:DPAK;isc N-Channel MOSFET Transistor

文件:309.36 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFETs

RENESAS

瑞萨

N-Channel 650 V (D-S) MOSFET

文件:1.086 Mbytes Page:9 Pages

VBSEMI

微碧半导体

2SK1152产品属性

  • 类型

    描述

  • 封装类型:

    DPAK(L)-(1)/TO-251

  • Nch/Pch:

    Nch

  • 通道数:

    Single

  • 配置[器件]:

    Built-In SBD

  • VDSS (V) 最大值:

    500

  • ID (A):

    1.5

  • RDS (ON)(mΩ) 最大值@10V或8V:

    6000

  • Ciss (pF) 典型值:

    160

  • Vgs (off) (V) 最大值:

    3

  • VGSS (V):

    30

  • Pch (W):

    20

  • 应用:

    Industrial

  • 安装类型:

    Through Hole

更新时间:2026-8-4 18:05:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
2450+
TO252
9850
只做原厂原装正品现货或订货假一赔十!
RENESAS/瑞萨
2223+
TO-252
26800
只做原装正品假一赔十为客户做到零风险
HITACHI
25+
SOT-252
30000
代理全新原装现货,价格优势
RENESAS
26+
TO-252
360000
进口原装现货
RENESAS
22+
TO-252
20000
公司只有原装 品质保证
N/A
25+
66880
原装正品,欢迎询价
RENESAS
2023+
SOT252
58000
进口原装,现货热卖
RENESAS
2511
TO-252
2876
电子元器件采购降本30%!原厂直采,砍掉中间差价
RENESAS
6
TO-252
2890
全新 发货1-2天
RENESA
24+
SOT-252
90000
郑重承诺只做原装进口现货

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