2SK1151价格

参考价格:¥1.5600

型号:2SK1151S 品牌:HITACHI 备注:这里有2SK1151多少钱,2025年最近7天走势,今日出价,今日竞价,2SK1151批发/采购报价,2SK1151行情走势销售排行榜,2SK1151报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SK1151

Silicon N-Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

HitachiHitachi Semiconductor

日立日立公司

2SK1151

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 1.5A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) =5.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Silicon N-Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

RENESAS

瑞萨

Silicon N-Channel MOSFET

Features ● Low on-resistance ● High speed switching ● Low drive current ● No secondary breakdown ● Suitable for switching regulator and DC-DC converter

KEXIN

科信电子

Silicon N-Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

HitachiHitachi Semiconductor

日立日立公司

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 1.5A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) =5.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

RENESAS

瑞萨

Silicon N Channel MOS FET

文件:126.54 Kbytes Page:7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET

文件:126.54 Kbytes Page:7 Pages

RENESAS

瑞萨

N-Channel 650V (D-S) Power MOSFET

文件:1.08323 Mbytes Page:9 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

文件:317.56 Kbytes Page:2 Pages

ISC

无锡固电

Silicon N Channel MOS FET

文件:126.54 Kbytes Page:7 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件:309.37 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel 650 V (D-S) MOSFET

文件:1.086 Mbytes Page:9 Pages

VBSEMI

微碧半导体

2SK1151产品属性

  • 类型

    描述

  • 型号

    2SK1151

  • 制造商

    HITACHI

  • 制造商全称

    Hitachi Semiconductor

  • 功能描述

    Silicon N-Channel MOS FET

更新时间:2025-8-16 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
24+
NA/
550
优势代理渠道,原装正品,可全系列订货开增值税票
RENESAS
2016+
SOT-252
3500
只做原装,假一罚十,公司可开17%增值税发票!
RENESAS/瑞萨
10+
SOT-252
793
一级代理,专注军工、汽车、医疗、工业、新能源、电力
HITACHI/日立
24+
TO 262 263
158126
明嘉莱只做原装正品现货
HIT
1822+
TO252
9852
只做原装正品假一赔十为客户做到零风险!!
RENESAS/瑞萨
21+
SOT-252
793
原装现货假一赔十
VB
2024
TO-251
13500
16余年资质 绝对原盒原盘代理渠道 更多数量
HITACHI
23+
TO-252
3000
专做原装正品,假一罚百!
Hitachi
25+23+
To-252
28111
绝对原装正品全新进口深圳现货
RENESAS/瑞萨
24+
TO-252
3000
只做原厂渠道 可追溯货源

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