MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ604 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Super low on-state resistance: RDS(on)1= 30 mΩMAX. (VGS= −10 V, ID= −23 A) RDS(on)2= 43 mΩMAX. (VGS= −4.0 V, ID= −23 A) • Low input

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ604 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Super low on-state resistance: RDS(on)1 = 30 mΩ MAX. (VGS = −10 V, ID = −23 A) RDS(on)2 = 43 mΩ MAX. (VGS = −4.0 V, ID = −23 A) •

Power MOSFETs

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ604 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Super low on-state resistance: RDS(on)1 = 30 mΩ MAX. (VGS = −10 V, ID = −23 A) RDS(on)2 = 43 mΩ MAX. (VGS = −4.0 V, ID = −23 A) •

MOS Field Effect Transistor

Features ● Low on-resistance RDS(on)1 =30 m MAX. (VGS =-10 V, ID = -23A) RDS(on)2 = 43m MAX. (VGS = -4.0 V, ID =-23 A) ● Low Ciss: Ciss = 3300 pF TYP. ● Built-in gate protection diode

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ604 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Super low on-state resistance: RDS(on)1= 30 mΩMAX. (VGS= −10 V, ID= −23 A) RDS(on)2= 43 mΩMAX. (VGS= −4.0 V, ID= −23 A) • Low input

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ604 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Super low on-state resistance: RDS(on)1 = 30 mΩ MAX. (VGS = −10 V, ID = −23 A) RDS(on)2 = 43 mΩ MAX. (VGS = −4.0 V, ID = −23 A) •

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ604 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Super low on-state resistance: RDS(on)1= 30 mΩMAX. (VGS= −10 V, ID= −23 A) RDS(on)2= 43 mΩMAX. (VGS= −4.0 V, ID= −23 A) • Low input

P-Channel MOSFET

■ Features ● VDS (V) =-60V ● ID =-45A ● RDS(ON)

Power MOSFETs

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ604 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Super low on-state resistance: RDS(on)1= 30 mΩMAX. (VGS= −10 V, ID= −23 A) RDS(on)2= 43 mΩMAX. (VGS= −4.0 V, ID= −23 A) • Low input

P-Channel 60 V (D-S) 175 째C MOSFET

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