型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
2SJ604. | P-Channel 60 V (D-S) 175 째C MOSFET 文件:1.90526 Mbytes Page:7 Pages | VBSEMI 微碧半导体 | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ604 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Super low on-state resistance: RDS(on)1 = 30 mΩ MAX. (VGS = −10 V, ID = −23 A) RDS(on)2 = 43 mΩ MAX. (VGS = −4.0 V, ID = −23 A) • | RENESAS 瑞萨 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ604 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Super low on-state resistance: RDS(on)1= 30 mΩMAX. (VGS= −10 V, ID= −23 A) RDS(on)2= 43 mΩMAX. (VGS= −4.0 V, ID= −23 A) • Low input | NEC 瑞萨 | |||
MOS Field Effect Transistor Features ● Low on-resistance RDS(on)1 =30 m MAX. (VGS =-10 V, ID = -23A) RDS(on)2 = 43m MAX. (VGS = -4.0 V, ID =-23 A) ● Low Ciss: Ciss = 3300 pF TYP. ● Built-in gate protection diode | KEXIN 科信电子 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ604 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Super low on-state resistance: RDS(on)1= 30 mΩMAX. (VGS= −10 V, ID= −23 A) RDS(on)2= 43 mΩMAX. (VGS= −4.0 V, ID= −23 A) • Low input | NEC 瑞萨 |
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
RENESAS |
11+ |
TO-220 |
900 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
07+06 |
TO-220 |
74 |
只做原装正品 |
|||
RENESAS/瑞萨 |
2223+ |
TO-220 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
NEC |
24+ |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
NEC |
TO-262 |
22+ |
6000 |
十年配单,只做原装 |
|||
RENESAS |
21+ |
TO-220 |
940 |
原装现货假一赔十 |
|||
RENESAS |
2023+ |
TO-220 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
NEC |
23+ |
T0-262 |
35890 |
||||
NK/南科功率 |
2025+ |
TO-263 |
986966 |
国产 |
|||
NEC |
24+ |
6540 |
原装现货/欢迎来电咨询 |
2SJ604.规格书下载地址
2SJ604.参数引脚图相关
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- 2SJ583
- 2SJ580
- 2SJ579
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2019-10-30
DdatasheetPDF页码索引
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