型号 功能描述 生产厂家&企业 LOGO 操作
2SJ604.

P-Channel 60 V (D-S) 175 째C MOSFET

文件:1.90526 Mbytes Page:7 Pages

VBSEMI

微碧半导体

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ604 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Super low on-state resistance: RDS(on)1 = 30 mΩ MAX. (VGS = −10 V, ID = −23 A) RDS(on)2 = 43 mΩ MAX. (VGS = −4.0 V, ID = −23 A) •

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ604 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Super low on-state resistance: RDS(on)1= 30 mΩMAX. (VGS= −10 V, ID= −23 A) RDS(on)2= 43 mΩMAX. (VGS= −4.0 V, ID= −23 A) • Low input

NEC

瑞萨

MOS Field Effect Transistor

Features ● Low on-resistance RDS(on)1 =30 m MAX. (VGS =-10 V, ID = -23A) RDS(on)2 = 43m MAX. (VGS = -4.0 V, ID =-23 A) ● Low Ciss: Ciss = 3300 pF TYP. ● Built-in gate protection diode

KEXIN

科信电子

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ604 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Super low on-state resistance: RDS(on)1= 30 mΩMAX. (VGS= −10 V, ID= −23 A) RDS(on)2= 43 mΩMAX. (VGS= −4.0 V, ID= −23 A) • Low input

NEC

瑞萨

更新时间:2025-8-20 14:07:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
11+
TO-220
900
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NEC
07+06
TO-220
74
只做原装正品
RENESAS/瑞萨
2223+
TO-220
26800
只做原装正品假一赔十为客户做到零风险
NEC
24+
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
NEC
TO-262
22+
6000
十年配单,只做原装
RENESAS
21+
TO-220
940
原装现货假一赔十
RENESAS
2023+
TO-220
8800
正品渠道现货 终端可提供BOM表配单。
NEC
23+
T0-262
35890
NK/南科功率
2025+
TO-263
986966
国产
NEC
24+
6540
原装现货/欢迎来电咨询

2SJ604.芯片相关品牌

2SJ604.数据表相关新闻