型号 功能描述 生产厂家&企业 LOGO 操作
2SJ604

MOSFIELDEFFECTTRANSISTOR

SWITCHINGP-CHANNELPOWERMOSFET DESCRIPTION The2SJ604isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=30mΩMAX.(VGS=−10V,ID=−23A) RDS(on)2=43mΩMAX.(VGS=−4.0V,ID=−23A) •Lowinput

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SJ604

MOSFieldEffectTransistor

Features ●Lowon-resistance RDS(on)1=30mMAX.(VGS=-10V,ID=-23A) RDS(on)2=43mMAX.(VGS=-4.0V,ID=-23A) ●LowCiss:Ciss=3300pFTYP. ●Built-ingateprotectiondiode

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SJ604

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ604isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=30mΩMAX.(VGS=−10V,ID=−23A) RDS(on)2=43mΩMAX.(VGS=−4.0V,ID=−23A) •

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ604isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=30mΩMAX.(VGS=−10V,ID=−23A) RDS(on)2=43mΩMAX.(VGS=−4.0V,ID=−23A) •

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSFIELDEFFECTTRANSISTOR

SWITCHINGP-CHANNELPOWERMOSFET DESCRIPTION The2SJ604isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=30mΩMAX.(VGS=−10V,ID=−23A) RDS(on)2=43mΩMAX.(VGS=−4.0V,ID=−23A) •Lowinput

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ604isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=30mΩMAX.(VGS=−10V,ID=−23A) RDS(on)2=43mΩMAX.(VGS=−4.0V,ID=−23A) •

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSFIELDEFFECTTRANSISTOR

SWITCHINGP-CHANNELPOWERMOSFET DESCRIPTION The2SJ604isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=30mΩMAX.(VGS=−10V,ID=−23A) RDS(on)2=43mΩMAX.(VGS=−4.0V,ID=−23A) •Lowinput

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

P-ChannelMOSFET

■Features ●VDS(V)=-60V ●ID=-45A ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ604isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=30mΩMAX.(VGS=−10V,ID=−23A) RDS(on)2=43mΩMAX.(VGS=−4.0V,ID=−23A) •

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSFIELDEFFECTTRANSISTOR

SWITCHINGP-CHANNELPOWERMOSFET DESCRIPTION The2SJ604isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=30mΩMAX.(VGS=−10V,ID=−23A) RDS(on)2=43mΩMAX.(VGS=−4.0V,ID=−23A) •Lowinput

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

P-Channel60V(D-S)175째CMOSFET

文件:1.90526 Mbytes Page:7 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

MOSFIELDEFFECTTRANSISTOR

文件:215.83 Kbytes Page:10 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SJ604产品属性

  • 类型

    描述

  • 型号

    2SJ604

  • 制造商

    NEC

  • 制造商全称

    NEC

  • 功能描述

    MOS FIELD EFFECT TRANSISTOR

更新时间:2024-6-4 20:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
20+
TO-220
36900
原装优势主营型号-可开原型号增税票
NEC
1822+
TO-262
9852
只做原装正品假一赔十为客户做到零风险!!
NEC
23+
TO-220AB
12096
全新原装
NEC
2339+
4326
公司原厂原装现货假一罚十!特价出售!强势库存!
VBsemi/台湾微碧
21+
TO220
1199
原装现货假一赔十
NEC
2022
TO-220
80000
原装现货,OEM渠道,欢迎咨询
NEC
23+
TO-220
880000
明嘉莱只做原装正品现货
NEC
TO-220
608900
原包原标签100%进口原装常备现货!
VBsemi
2225+
TO251
2202
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
NEC
2024+实力库存
TO-263
272
只做原厂渠道 可追溯货源

2SJ604芯片相关品牌

  • ASM-SENSOR
  • Central
  • GENESIC
  • Intersil
  • IRCTT
  • KSS
  • Marktech
  • PROTEC
  • RFMD
  • SOURCE
  • TAIYO-YUDEN
  • WEITRON

2SJ604数据表相关新闻