SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS = –10 V, ID = –18 A) RDS(on)2 = 46 mΩ MAX. (VGS = –4.0 V, ID = –18 A) • Low input capacitance:

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES Low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS = –10 V, ID = –18 A) RDS(on)2 = 46 mΩ MAX. (VGS = –4.0 V, ID = –18 A) Low input

MOS Field Effect Transistor

MOS Field Effect Transistor Features Low on-resistance RDS(on)1 = 31 m MAX. (VGS =-10 V, ID = -18 A) RDS(on)2 = 46m MAX. (VGS = -4.0 V, ID =-18 A) Low Ciss: Ciss = 3300 pF TYP. Built-in gate protection diode

P-Channel 60-V (D-S) MOSFET

FEATURES RDS(ON) 14mQ@VGs=-10V (Typ) RDs(ON) 16mQ@VGs=-4.5V(Typ) Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability

P-Channel MOSFET uses advanced trench technology

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