SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS = –10 V, ID = –18 A) RDS(on)2 = 46 mΩ MAX. (VGS = –4.0 V, ID = –18 A) • Low input capacitance:

MOS Field Effect Transistor

MOS Field Effect Transistor Features Low on-resistance RDS(on)1 = 31 m MAX. (VGS =-10 V, ID = -18 A) RDS(on)2 = 46m MAX. (VGS = -4.0 V, ID =-18 A) Low Ciss: Ciss = 3300 pF TYP. Built-in gate protection diode

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES Low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS = –10 V, ID = –18 A) RDS(on)2 = 46 mΩ MAX. (VGS = –4.0 V, ID = –18 A) Low input

丝印代码：J601；P-Channel 60-V (D-S) MOSFET

FEATURES RDS(ON) 14mQ@VGs=-10V (Typ) RDs(ON) 16mQ@VGs=-4.5V(Typ) Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability

Pch Single Power Mosfet -60V -36A 31Mohm Mp-3/To-251

The 2SJ601 is a Pch Single Power Mosfet -60V -36A 31Mohm Mp-3/To-251. • Low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS = –10 V, ID = –18 A) RDS(on)2 = 46 mΩ MAX. (VGS = –4.0 V, ID = –18 A)\n• Low input capacitance: Ciss = 3300 pF TYP. (VDS = –10 V, VGS = 0 V)\n• Built-in gate protection diode\n• TO-251/TO-252 package\n文档文档标题类型日期Attention of Handling Semiconductor;

P-Channel MOSFET uses advanced trench technology

文件：1.22222 Mbytes Page：4 Pages

Pch Single Power Mosfet -60V -36A 31Mohm Mp-3Z/To-252

The 2SJ601-Z is a Pch Single Power Mosfet -60V -36A 31Mohm Mp-3Z/To-252. • Low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS = –10 V, ID = –18 A) RDS(on)2 = 46 mΩ MAX. (VGS = –4.0 V, ID = –18 A)\n• Built-in gate protection diode\n• TO-251/TO-252 package\n文档文档标题类型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档 2021年4月16日2SJ601 Data SheetPDF232 KB数据手册 2006年;

Isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -36A@ TC=25℃ ·Drain Source Voltage -VDSS= -60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 31mΩ(Max)@VGS= -10V DESCRIPTION ·Solenoid, motor and lamp driver

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES Low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS = –10 V, ID = –18 A) RDS(on)2 = 46 mΩ MAX. (VGS = –4.0 V, ID = –18 A) Low input

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS = –10 V, ID = –18 A) RDS(on)2 = 46 mΩ MAX. (VGS = –4.0 V, ID = –18 A) • Low input capacitance:

Pch Single Power Mosfet -60V -36A 31Mohm Mp-3Zk/To-252

The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. • Low on-state resistance:RDS(on)1 = 31 mΩ MAX. (VGS = –10 V, ID = –18 A)RDS(on)2 = 46 mΩ MAX. (V/GS = –4.0 V, ID = –18 A)\n• Low input capacitance:Ciss = 3300 pF TYP. (VDS = –10 V, VGS = 0 V)\n• Built-in gate protection diode\n• TO-251/TO-252 package;

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANSISTOR 分立半导体产品 晶体管 - FET，MOSFET - 单个

SWITCHING P-CHANNEL POWER MOS FET

文件：239.37 Kbytes Page：10 Pages

P-Channel 60 V (D-S) MOSFET

文件：971.71 Kbytes Page：7 Pages