位置：首页 > IC中文资料第1010页 > 2SJ553S-TL-E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HITACHIHitachi Semiconductor 日立日立公司 |   | ||
Silicon P Channel MOS FET • Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET • Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：115.51 Kbytes Page：11 Pages | RENESAS 瑞萨 | |
2SJ553S-TL-E产品属性
- 类型
描述
- 型号
2SJ553S-TL-E
- 制造商
Renesas Electronics Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
2000 |
SIP-2.5 |
8 |
原装现货海量库存欢迎咨询 |
||||
Renesas(瑞萨) |
24+ |
标准封装 |
7053 |
支持大陆交货,美金交易。原装现货库存。 |
|||
HITACHI |
1922+ |
SOT-262 |
35689 |
原装进口现货库存专业工厂研究所配单供货 |
|||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
|||
25+23+ |
SIP-2.5 |
8231 |
绝对原装正品全新进口深圳现货 |
||||
RENESAS/瑞萨 |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
|||
HITACHI |
2023+ |
TO-263 |
50000 |
原装现货 |
|||
HITACHI |
24+ |
TO-263 |
5500 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
RENESAS |
2016+ |
TO263 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
RENESAS |
22+ |
SOT263 |
20000 |
公司只有原装 品质保证 |
2SJ553S-TL-E芯片相关品牌
2SJ553S-TL-E规格书下载地址
2SJ553S-TL-E参数引脚图相关
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- 2SJ547
- 2SJ546
- 2SJ545
- 2SJ544
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2019-10-30
DdatasheetPDF页码索引
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