位置：首页 > IC中文资料第6252页 > 2SJ553(L)
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ553(L) | Power switching MOSFET | HitachiHitachi Semiconductor 日立日立公司 |   | |
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET • Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：115.51 Kbytes Page：11 Pages | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET • Low on-resistance RDS(on)= 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | RENESAS 瑞萨 | |
2SJ553(L)产品属性
- 类型
描述
- 型号
2SJ553(L)
- 功能描述
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-262VAR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISC/固电 |
23+ |
I2PAKTO-262 |
94888 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
RENESAS/瑞萨 |
23+ |
TO263 |
50000 |
全新原装正品现货,支持订货 |
|||
HITACHI |
24+ |
TO-263 |
36800 |
||||
RENESAS |
2016+ |
TO263 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
RENESAS/瑞萨 |
24+ |
TO-263 |
21574 |
郑重承诺只做原装进口现货 |
|||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
|||
HIT |
24+ |
NA |
5500 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
RENESAS |
20+ |
TO-263 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
RENESAS/瑞萨 |
24+ |
TO-252 |
30000 |
只做正品原装现货 |
|||
RENESAS |
23+ |
TO-263 |
429 |
全新原装正品现货,支持订货 |
2SJ553(L)规格书下载地址
2SJ553(L)参数引脚图相关
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- 2SJ553(L)|2SJ553(S)
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- 2SJ552L-E
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- 2SJ552(S)
- 2SJ552(L)|2SJ552(S)
- 2SJ552(L)
- 2SJ552
- 2SJ551STL-E
- 2SJ551S
- 2SJ551L-E
- 2SJ551-L(E)
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- 2SJ551(L)|2SJ551(S)
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- 2SJ550STL-E
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DdatasheetPDF页码索引
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