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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ529(L)/(S) | Silicon P-Channel MOS FET | HITACHIHitachi Semiconductor 日立日立公司 |   | |
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.12 Ω typ. • 4 V gete drive devices • High speed switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.12 Ω typ. • 4 V gete drive devices • High speed switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET 文件：114.08 Kbytes Page：11 Pages | RENESAS 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RNESASA |
24+ |
TO-252 |
60000 |
||||
RNESASA |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
|||
RENESAS |
2511 |
TO-252 |
10 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
NEC |
26+ |
ZIP |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
RENESAS |
24+ |
TO-252 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
RENESAS |
23+ |
TO-251 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
RENESAS |
23+ |
TO-251 |
6082 |
原厂原装正品 |
|||
RENES |
23+ |
TO-251 |
7500 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
RNESASA |
16+ |
TO-252 |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
24+ |
N/A |
62000 |
一级代理-主营优势-实惠价格-不悔选择 |
2SJ529(L)/(S)规格书下载地址
2SJ529(L)/(S)参数引脚图相关
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2SJ529(L)/(S)数据表相关新闻
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2019-10-30
DdatasheetPDF页码索引
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