| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.11 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching | HitachiHitachi Semiconductor 日立日立公司 |   | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.11 Ω typ. • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
isc P-Channel MOSFET Transistor FEATURES · Drain Current -ID=-12A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= -10V DESCRIPTION · High fast switching Power Supply | ISC 无锡固电 | | ||
P-Channel 60-V (D-S) MOSFET 文件：1.58356 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
isc P-Channel MOSFET Transistor 文件：298.69 Kbytes Page：2 Pages | ISC 无锡固电 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Renesas(瑞萨) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
HITACHI |
24+ |
TO-252 |
6300 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
HITACHI/日立 |
22+ |
TO-251 |
20000 |
公司只有原装 品质保证 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS |
25+ |
700 |
公司现货库存 |
||||
RENESAS |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
RENESAS |
23+ |
NA |
630 |
专做原装正品,假一罚百! |
|||
RENESAS |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
RENESAS |
24+ |
60000 |
|||||
VBsemi |
24+ |
TO220F |
9000 |
只做原装正品 有挂有货 假一赔十 |
2SJ526E芯片相关品牌
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2SJ526E数据表相关新闻
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2019-10-30
DdatasheetPDF页码索引
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