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2SJ49价格
参考价格：￥0.8450
型号：2SJ490 品牌：shindengen 备注：这里有2SJ49多少钱，2026年最近7天走势，今日出价，今日竞价，2SJ49批发/采购报价，2SJ49行情走势销售排行榜，2SJ49报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ49 | LOW FREQUENCY POWER AMPLIFIER SILICON P-CHANNEL MOSFET LOW FREQUENCY POWER AMPLIFIER Complementary Pair with 2SK133, 2SK134, 2SK135 | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SJ49 | Silicon P-channel MOSFET low frequency power amplifier | HITACHIHitachi Semiconductor 日立日立公司 | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits. FEATURES • Low on-state resistance RDS(on)1 = 100 mΩ MAX. (VGS = −10 V, ID = −10 A) RDS(on)2 = 185 mΩ MAX. (VGS = −4 V, ID = | RENESAS 瑞萨 | | ||
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits. FEATURES • Low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS = –10 V, ID = –10 A) RDS(on)2 = 185 mΩ (MAX.) (VGS = –4 V, ID = –10 A) • Low Ciss: Ciss = 121 | NEC 瑞萨 | | ||
MOS Field Effect Transistor Features Low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS = -10 V, ID = -10 A) RDS(on)2 = 185 mΩ (MAX.) (VGS =-4 V, ID =-10 A) Low Ciss: Ciss = 1210 pF (TYP.) Built-in gate protection diode | KEXIN 科信电子 | | ||
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits. FEATURES • Low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS = –10 V, ID = –10 A) RDS(on)2 = 185 mΩ (MAX.) (VGS = –4 V, ID = –10 A) • Low Ciss: Ciss = 121 | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits. FEATURES • Low on-state resistance RDS(on)1 = 100 mΩ MAX. (VGS = −10 V, ID = −10 A) RDS(on)2 = 185 mΩ MAX. (VGS = −4 V, ID = | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits. FEATURES • Low on-state resistance RDS(on)1 = 100 mΩ MAX. (VGS = −10 V, ID = −10 A) RDS(on)2 = 185 mΩ MAX. (VGS = −4 V, ID = | RENESAS 瑞萨 | | ||
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits. FEATURES • Low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS = –10 V, ID = –10 A) RDS(on)2 = 185 mΩ (MAX.) (VGS = –4 V, ID = –10 A) • Low Ciss: Ciss = 121 | NEC 瑞萨 | | ||
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS = –10 V, ID = –8 A) RDS(on)2 = 185 mΩ (MAX.) (VGS = –4 V, ID = –8 A) • Low Ciss: Ciss = | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES · Super low on-state resistance RDS(on)1 = 100 mW (MAX.) (VGS = –10 V, ID = –8 A) RDS(on)2 = 185 mW (MAX.) (VGS | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT POWER TRANSISTORS SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1 = 50 m: Max. (VGS = –10 V, ID = –10 A) RDS(on)2 = 88 m: Max. (VGS = –4 V | RENESAS 瑞萨 | | ||
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. • Super Low On-State Resistance RDS(on)1= 50 m:Max. (VGS= –10 V, ID= –10 A) RDS(on)2= 88 m:Max. (VGS= –4 V, ID= –10 A) • Low Ciss Ciss= 2360 pF Typ. • Built-in Gate Protection Dio | NEC 瑞萨 | | ||
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1= 30 mΩMAX. (VGS= –10 V, ID= –15 A) RDS(on)2= 56 mΩMAX. (VGS= –4 V, ID= –15 A) • Low CissCiss= 4120 pF TYP. • Built-in | NEC 瑞萨 | | ||
MOS FIELD EFFECT POWER TRANSISTORS SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1 = 30 mW MAX. (VGS = –10 V, ID = –15 A) RDS(on)2 = 56 mW MAX. (VGS = –4 V | RENESAS 瑞萨 | | ||
Silicon P-Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.12Ω typ. (at VGS = –10 V, ID = –2.5 A) • 4V gate drive devices. • Large current capacitance ID = –5 A | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. (at VGS = –10 V, ID = –2.5 A) • 4 V gate drive devices. • Large current capacitance ID = –5 A | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. (at VGS = –10 V, ID = –2.5 A) • 4 V gate drive devices. • Large current capacitance ID = –5 A | RENESAS 瑞萨 | | ||
FIELD-EFFECT TRANSISTOR DESCRIPTION 2SJ498 is a small type resin sealed P channel junction type FET. It is especially designed for low frequency voltage amplify, analog switch application. FEATURES • Small type for mounting • High |yfs| |yfs|=4mS(typ) • Low RDS(ON) RDS(ON)=220 Ω (typ) APPLICATION General purp | ISAHAYA 谏早电子 | | ||
Load Switching Applications Load Switching Applications Features • Low ON-state resistance. • 4V drive. | SANYO 三洋 | | ||
P-Channel MOSFET 文件：1.65309 Mbytes Page：5 Pages | KEXIN 科信电子 | | ||
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE | RENESAS 瑞萨 | | ||
Pch power MOSFET MP-45F 60V/20A | RENESAS 瑞萨 | | ||
P-Channel 60 V (D-S) MOSFET 文件：932.76 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
Silicon P Channel MOS FET 文件：114.03 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：114.03 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：114.03 Kbytes Page：8 Pages | RENESAS 瑞萨 | |
2SJ49产品属性
- 类型
描述
- 型号
2SJ49
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
LOW FREQUENCY POWER AMPLIFIER
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
三年内 |
1983 |
只做原装正品 |
|||||
24+ |
N/A |
75000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
RENESAS/瑞萨 |
25+ |
SOT-23 |
20300 |
RENESAS/瑞萨原装特价2SJ497即刻询购立享优惠#长期有货 |
|||
RENESAS/瑞萨 |
24+ |
TO-220F |
60000 |
||||
SANYO/三洋 |
2450+ |
SOT-252 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
三菱 |
24+ |
SMD |
598000 |
原装现货假一赔十 |
|||
SANYO/三洋 |
23+ |
TO-251 |
4900 |
||||
NEC |
26+ |
TO-220 |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
RENESAS |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
NEC |
24+ |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
2SJ49规格书下载地址
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2019-10-30
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