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2SJ49价格

参考价格：￥0.8450

型号：2SJ490 品牌：shindengen 备注：这里有2SJ49多少钱，2026年最近7天走势，今日出价，今日竞价，2SJ49批发/采购报价，2SJ49行情走势销售排行榜，2SJ49报价。

型号	功能描述	生产厂家企业	LOGO
2SJ49	LOW FREQUENCY POWER AMPLIFIER SILICON P-CHANNEL MOSFET LOW FREQUENCY POWER AMPLIFIER Complementary Pair with 2SK133, 2SK134, 2SK135	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SJ49	Silicon P-channel MOSFET low frequency power amplifier	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SJ492	MOS Field Effect Transistor Features Low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS = -10 V, ID = -10 A) RDS(on)2 = 185 mΩ (MAX.) (VGS =-4 V, ID =-10 A) Low Ciss: Ciss = 1210 pF (TYP.) Built-in gate protection diode	KEXIN 科信电子	KEXIN
2SJ492	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits. FEATURES • Low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS = –10 V, ID = –10 A) RDS(on)2 = 185 mΩ (MAX.) (VGS = –4 V, ID = –10 A) • Low Ciss: Ciss = 121	NEC 瑞萨	NEC
2SJ492	MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits. FEATURES • Low on-state resistance RDS(on)1 = 100 mΩ MAX. (VGS = −10 V, ID = −10 A) RDS(on)2 = 185 mΩ MAX. (VGS = −4 V, ID =	RENESAS 瑞萨	RENESAS
2SJ492-S	MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits. FEATURES • Low on-state resistance RDS(on)1 = 100 mΩ MAX. (VGS = −10 V, ID = −10 A) RDS(on)2 = 185 mΩ MAX. (VGS = −4 V, ID =	RENESAS 瑞萨	RENESAS
2SJ492-S	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits. FEATURES • Low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS = –10 V, ID = –10 A) RDS(on)2 = 185 mΩ (MAX.) (VGS = –4 V, ID = –10 A) • Low Ciss: Ciss = 121	NEC 瑞萨	NEC
2SJ492-ZJ	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits. FEATURES • Low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS = –10 V, ID = –10 A) RDS(on)2 = 185 mΩ (MAX.) (VGS = –4 V, ID = –10 A) • Low Ciss: Ciss = 121	NEC 瑞萨	NEC
2SJ492-ZJ	MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits. FEATURES • Low on-state resistance RDS(on)1 = 100 mΩ MAX. (VGS = −10 V, ID = −10 A) RDS(on)2 = 185 mΩ MAX. (VGS = −4 V, ID =	RENESAS 瑞萨	RENESAS
2SJ493	MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES · Super low on-state resistance RDS(on)1 = 100 mW (MAX.) (VGS = –10 V, ID = –8 A) RDS(on)2 = 185 mW (MAX.) (VGS	RENESAS 瑞萨	RENESAS
2SJ493	isc P-Channel MOSFET Transistor FEATURES · Drain Current -ID= -16A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= -10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SJ493	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS = –10 V, ID = –8 A) RDS(on)2 = 185 mΩ (MAX.) (VGS = –4 V, ID = –8 A) • Low Ciss: Ciss =	NEC 瑞萨	NEC
2SJ494	isc P-Channel MOSFET Transistor FEATURES · Drain Current -ID= -20A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.05Ω(Max)@VGS= -10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SJ494	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. • Super Low On-State Resistance RDS(on)1= 50 m:Max. (VGS= –10 V, ID= –10 A) RDS(on)2= 88 m:Max. (VGS= –4 V, ID= –10 A) • Low Ciss Ciss= 2360 pF Typ. • Built-in Gate Protection Dio	NEC 瑞萨	NEC
2SJ494	MOS FIELD EFFECT POWER TRANSISTORS SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1 = 50 m: Max. (VGS = –10 V, ID = –10 A) RDS(on)2 = 88 m: Max. (VGS = –4 V	RENESAS 瑞萨	RENESAS
2SJ494	Pch power MOSFET MP-45F 60V/20A This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. • Super Low On-State Resistance\n RDS(on)1= 50 m:Max. (VGS= –10 V, ID= –10 A)\n RDS(on)2= 88 m:Max. (VGS= –4 V, ID= –10 A)\n\n• Low Ciss Ciss= 2360 pF Typ.\n\n• Built-in Gate Protection Diode	RENESAS 瑞萨	RENESAS
2SJ495	MOS FIELD EFFECT POWER TRANSISTORS SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1 = 30 mW MAX. (VGS = –10 V, ID = –15 A) RDS(on)2 = 56 mW MAX. (VGS = –4 V	RENESAS 瑞萨	RENESAS
2SJ495	isc P-Channel MOSFET Transistor FEATURES · Drain Current -ID= -30A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.03Ω(Max)@VGS= -10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SJ495	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1= 30 mΩMAX. (VGS= –10 V, ID= –15 A) RDS(on)2= 56 mΩMAX. (VGS= –4 V, ID= –15 A) • Low CissCiss= 4120 pF TYP. • Built-in	NEC 瑞萨	NEC
2SJ496	Silicon P-Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.12Ω typ. (at VGS = –10 V, ID = –2.5 A) • 4V gate drive devices. • Large current capacitance ID = –5 A	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SJ496	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. (at VGS = –10 V, ID = –2.5 A) • 4 V gate drive devices. • Large current capacitance ID = –5 A	RENESAS 瑞萨	RENESAS
2SJ496TZ-E	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. (at VGS = –10 V, ID = –2.5 A) • 4 V gate drive devices. • Large current capacitance ID = –5 A	RENESAS 瑞萨	RENESAS
2SJ498	FIELD-EFFECT TRANSISTOR DESCRIPTION 2SJ498 is a small type resin sealed P channel junction type FET. It is especially designed for low frequency voltage amplify, analog switch application. FEATURES • Small type for mounting • High \|yfs\| \|yfs\|=4mS(typ) • Low RDS(ON) RDS(ON)=220 Ω (typ) APPLICATION General purp	ISAHAYA 谏早电子	ISAHAYA
2SJ499	Load Switching Applications Load Switching Applications Features • Low ON-state resistance. • 4V drive.	SANYO 三洋	SANYO
2SJ492-ZJ	P-Channel MOSFET 文件：1.65309 Mbytes Page：5 Pages	KEXIN 科信电子	KEXIN
2SJ493	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE	RENESAS 瑞萨	RENESAS
2SJ494	P-Channel 60 V (D-S) MOSFET 文件：932.76 Kbytes Page：7 Pages	VBSEMI 微碧半导体	VBSEMI
2SJ496_11	Silicon P Channel MOS FET 文件：114.03 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
2SJ496_15	Silicon P Channel MOS FET 文件：114.03 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
2SJ496TZ-E	Silicon P Channel MOS FET 文件：114.03 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS

2SJ49产品属性

类型
描述
RDS (ON) (mohm) max. @10V or 8V：
30
Package Type：
MP-45F/TO-220
Ciss (pF) typ.：
4120
Nch/Pch：
Pch
Vgs (off) (V) max.：
-2
Number of Channels：
Single
VGSS (V)：
20
Automotive：
YES
Pch (W)：
35
VDSS (V) max.：
-60
Application：
Low Voltage General Switching
ID (A)：
-30
Mounting Type：
Through Hole
RDS (ON) (mohm) max. @4V or 4.5V：
56
QG (nC) typ.：
140

2SJ49供应商更多...

更新时间：2026-8-3 16:08:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市昊创电子有限公司	2SJ49	HITACHI	专业铁帽	TO-3	1	原装铁帽专营,代理渠道量大可订货	询价
上海金庆电子技术有限公司	2SJ499-TL	SANYO	03+	TO252	307	全新发货1-2天	询价
深圳市东来宝电子科技有限公司	2SJ494-AZ	RENESAS/瑞萨	24+	TO220F	54000	郑重承诺只做原装进口现货	询价
深圳市富芯乐电子科技有限公司	2SJ499-TL	SANYO	24+	TO-252	4000	只做原装正品现货欢迎来电查询15919825718	询价
深圳市勤思达科技有限公司	2SJ499-TL	SANYO	24+	SOT-252	5000	全新原装正品,现货销售	询价
深圳市恒创达实业有限公司	2SJ495	NEC	17+	TO-220F	6200		询价
深圳市一线半导体有限公司	2SJ496		24+		2000		询价
深圳市华斯顿科技有限公司	2SJ499/J499	Sanyo	25+23+	To-252	31232	绝对原装正品全新进口深圳现货	询价
深圳市豪迈兴电子有限公司	2SJ493	NEC	2602+		8858	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
洪芯国际半导体（深圳）有限公司	2SJ499/J499	SANYO/三洋	26+	原厂原封装	86720	全新原装正品价格最实惠假一赔百	询价

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DdatasheetPDF页码索引

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找IC，尽在114IC

2SJ49价格

2SJ49产品属性

2SJ49供应商更多...

2SJ49芯片相关品牌

2SJ49规格书下载地址

2SJ49参数引脚图相关

2SJ49数据表相关新闻

2SJ652-1E 绝缘栅场效应管(MOSFET)

2SD669AL-TO92NLB-C-TG_UTC代理商

2SD882SL-TO92B-P-TG_UTC代理商

2SD669AL-TO126T-D-TG_UTC代理商

2SK1485-T1

2SK1985

DdatasheetPDF页码索引