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2SJ49价格

参考价格：￥0.8450

型号：2SJ490 品牌：shindengen 备注：这里有2SJ49多少钱，2025年最近7天走势，今日出价，今日竞价，2SJ49批发/采购报价，2SJ49行情走势销售排行榜，2SJ49报价。

型号	功能描述	生产厂家企业	LOGO
2SJ49	LOW FREQUENCY POWER AMPLIFIER SILICON P-CHANNEL MOSFET LOW FREQUENCY POWER AMPLIFIER Complementary Pair with 2SK133, 2SK134, 2SK135	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ49	Silicon P-channel MOSFET low frequency power amplifier	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ492	MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits. FEATURES • Low on-state resistance RDS(on)1 = 100 mΩ MAX. (VGS = −10 V, ID = −10 A) RDS(on)2 = 185 mΩ MAX. (VGS = −4 V, ID =	RENESAS 瑞萨	RENESAS
2SJ492	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits. FEATURES • Low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS = –10 V, ID = –10 A) RDS(on)2 = 185 mΩ (MAX.) (VGS = –4 V, ID = –10 A) • Low Ciss: Ciss = 121	NEC 瑞萨	NEC
2SJ492	MOS Field Effect Transistor Features Low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS = -10 V, ID = -10 A) RDS(on)2 = 185 mΩ (MAX.) (VGS =-4 V, ID =-10 A) Low Ciss: Ciss = 1210 pF (TYP.) Built-in gate protection diode	KEXIN 科信电子	KEXIN
2SJ492-S	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits. FEATURES • Low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS = –10 V, ID = –10 A) RDS(on)2 = 185 mΩ (MAX.) (VGS = –4 V, ID = –10 A) • Low Ciss: Ciss = 121	NEC 瑞萨	NEC
2SJ492-S	MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits. FEATURES • Low on-state resistance RDS(on)1 = 100 mΩ MAX. (VGS = −10 V, ID = −10 A) RDS(on)2 = 185 mΩ MAX. (VGS = −4 V, ID =	RENESAS 瑞萨	RENESAS
2SJ492-ZJ	MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits. FEATURES • Low on-state resistance RDS(on)1 = 100 mΩ MAX. (VGS = −10 V, ID = −10 A) RDS(on)2 = 185 mΩ MAX. (VGS = −4 V, ID =	RENESAS 瑞萨	RENESAS
2SJ492-ZJ	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and motor/lamp driver circuits. FEATURES • Low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS = –10 V, ID = –10 A) RDS(on)2 = 185 mΩ (MAX.) (VGS = –4 V, ID = –10 A) • Low Ciss: Ciss = 121	NEC 瑞萨	NEC
2SJ493	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS = –10 V, ID = –8 A) RDS(on)2 = 185 mΩ (MAX.) (VGS = –4 V, ID = –8 A) • Low Ciss: Ciss =	NEC 瑞萨	NEC
2SJ493	MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES · Super low on-state resistance RDS(on)1 = 100 mW (MAX.) (VGS = –10 V, ID = –8 A) RDS(on)2 = 185 mW (MAX.) (VGS	RENESAS 瑞萨	RENESAS
2SJ494	MOS FIELD EFFECT POWER TRANSISTORS SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1 = 50 m: Max. (VGS = –10 V, ID = –10 A) RDS(on)2 = 88 m: Max. (VGS = –4 V	RENESAS 瑞萨	RENESAS
2SJ494	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. • Super Low On-State Resistance RDS(on)1= 50 m:Max. (VGS= –10 V, ID= –10 A) RDS(on)2= 88 m:Max. (VGS= –4 V, ID= –10 A) • Low Ciss Ciss= 2360 pF Typ. • Built-in Gate Protection Dio	NEC 瑞萨	NEC
2SJ495	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1= 30 mΩMAX. (VGS= –10 V, ID= –15 A) RDS(on)2= 56 mΩMAX. (VGS= –4 V, ID= –15 A) • Low CissCiss= 4120 pF TYP. • Built-in	NEC 瑞萨	NEC
2SJ495	MOS FIELD EFFECT POWER TRANSISTORS SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1 = 30 mW MAX. (VGS = –10 V, ID = –15 A) RDS(on)2 = 56 mW MAX. (VGS = –4 V	RENESAS 瑞萨	RENESAS
2SJ496	Silicon P-Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.12Ω typ. (at VGS = –10 V, ID = –2.5 A) • 4V gate drive devices. • Large current capacitance ID = –5 A	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ496	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. (at VGS = –10 V, ID = –2.5 A) • 4 V gate drive devices. • Large current capacitance ID = –5 A	RENESAS 瑞萨	RENESAS
2SJ496TZ-E	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. (at VGS = –10 V, ID = –2.5 A) • 4 V gate drive devices. • Large current capacitance ID = –5 A	RENESAS 瑞萨	RENESAS
2SJ498	FIELD-EFFECT TRANSISTOR DESCRIPTION 2SJ498 is a small type resin sealed P channel junction type FET. It is especially designed for low frequency voltage amplify, analog switch application. FEATURES • Small type for mounting • High \|yfs\| \|yfs\|=4mS(typ) • Low RDS(ON) RDS(ON)=220 Ω (typ) APPLICATION General purp	ISAHAYA 谏早电子	ISAHAYA
2SJ499	Load Switching Applications Load Switching Applications Features • Low ON-state resistance. • 4V drive.	SANYO 三洋	SANYO
2SJ492-ZJ	P-Channel MOSFET 文件：1.65309 Mbytes Page：5 Pages	KEXIN 科信电子	KEXIN
2SJ493	SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE	RENESAS 瑞萨	RENESAS
2SJ494	Pch power MOSFET MP-45F 60V/20A	RENESAS 瑞萨	RENESAS
2SJ494	P-Channel 60 V (D-S) MOSFET 文件：932.76 Kbytes Page：7 Pages	VBSEMI 微碧半导体	VBSEMI
2SJ496_11	Silicon P Channel MOS FET 文件：114.03 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
2SJ496_15	Silicon P Channel MOS FET 文件：114.03 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
2SJ496TZ-E	Silicon P Channel MOS FET 文件：114.03 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS

2SJ49产品属性

类型
描述
型号
2SJ49
制造商
HITACHI
制造商全称
Hitachi Semiconductor
功能描述
LOW FREQUENCY POWER AMPLIFIER

2SJ49供应商更多...

更新时间：2025-11-23 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	2SJ495-S12-AZ	RENESAS(瑞萨)/IDT	24+		7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市得捷芯城科技有限公司	2SJ499-E	SANYO/三洋	24+	NA/	8150	原装现货,当天可交货,原型号开票	询价
深圳市凌旭科技有限公司	2SJ499-TL-E	SANYO	2016+	SOT-252	3500	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市金芯世纪电子有限公司	2SJ499-TL-E	SANYO/三洋	22+	SOT252	100000	代理渠道/只做原装/可含税	询价
深圳市明嘉莱科技有限公司	2SJ494-AZ	RENESAS/瑞萨	24+	TO220F	880000	明嘉莱只做原装正品现货	询价
深圳市华斯顿科技有限公司	2SJ499/J499	Sanyo	25+23+	To-252	31232	绝对原装正品全新进口深圳现货	询价
深圳市坤融电子科技有限公司	2SJ497	RENESAS/瑞萨	2025+	SOT-23	5000	原装进口价格优请找坤融电子!	询价
深圳市一线半导体有限公司	2SJ49		24+	TO-3	10000		询价
深圳市恒创达实业有限公司	2SJ495	NEC	17+	TO-220F	6200		询价
深圳市勤思达科技有限公司	2SJ499-TL	SANYO	24+	SOT-252	5000	全新原装正品,现货销售	询价

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2SJ49价格

2SJ49产品属性

2SJ49供应商更多...

2SJ49芯片相关品牌

2SJ49规格书下载地址

2SJ49参数引脚图相关

2SJ49数据表相关新闻

2SJ652-1E 绝缘栅场效应管(MOSFET)

2SD669AL-TO92NLB-C-TG_UTC代理商

2SD882SL-TO92B-P-TG_UTC代理商

2SD669AL-TO126T-D-TG_UTC代理商

2SK1485-T1

2SK1985

DdatasheetPDF页码索引