型号 功能描述 生产厂家&企业 LOGO 操作
2SJ492

SWITCHINGP-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION ThisproductisP-ChannelMOSFieldEffectTransistordesignedforDC/DCconvertersandmotor/lampdrivercircuits. FEATURES •Lowon-stateresistance RDS(on)1=100mΩ(MAX.)(VGS=–10V,ID=–10A) RDS(on)2=185mΩ(MAX.)(VGS=–4V,ID=–10A) •LowCiss:Ciss=121

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SJ492

MOSFieldEffectTransistor

Features Lowon-stateresistance RDS(on)1=100mΩ(MAX.)(VGS=-10V,ID=-10A) RDS(on)2=185mΩ(MAX.)(VGS=-4V,ID=-10A) LowCiss:Ciss=1210pF(TYP.) Built-ingateprotectiondiode

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SJ492

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION ThisproductisP-ChannelMOSFieldEffectTransistordesignedforDC/DCconvertersandmotor/lampdriver circuits. FEATURES •Lowon-stateresistance RDS(on)1=100mΩMAX.(VGS=−10V,ID=−10A) RDS(on)2=185mΩMAX.(VGS=−4V,ID=

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION ThisproductisP-ChannelMOSFieldEffectTransistordesignedforDC/DCconvertersandmotor/lampdriver circuits. FEATURES •Lowon-stateresistance RDS(on)1=100mΩMAX.(VGS=−10V,ID=−10A) RDS(on)2=185mΩMAX.(VGS=−4V,ID=

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SWITCHINGP-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION ThisproductisP-ChannelMOSFieldEffectTransistordesignedforDC/DCconvertersandmotor/lampdrivercircuits. FEATURES •Lowon-stateresistance RDS(on)1=100mΩ(MAX.)(VGS=–10V,ID=–10A) RDS(on)2=185mΩ(MAX.)(VGS=–4V,ID=–10A) •LowCiss:Ciss=121

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION ThisproductisP-ChannelMOSFieldEffectTransistordesignedforDC/DCconvertersandmotor/lampdriver circuits. FEATURES •Lowon-stateresistance RDS(on)1=100mΩMAX.(VGS=−10V,ID=−10A) RDS(on)2=185mΩMAX.(VGS=−4V,ID=

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SWITCHINGP-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION ThisproductisP-ChannelMOSFieldEffectTransistordesignedforDC/DCconvertersandmotor/lampdrivercircuits. FEATURES •Lowon-stateresistance RDS(on)1=100mΩ(MAX.)(VGS=–10V,ID=–10A) RDS(on)2=185mΩ(MAX.)(VGS=–4V,ID=–10A) •LowCiss:Ciss=121

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

P-ChannelMOSFET

文件:1.65309 Mbytes Page:5 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

2SJ492产品属性

  • 类型

    描述

  • 型号

    2SJ492

  • 制造商

    KEXIN

  • 制造商全称

    Guangdong Kexin Industrial Co.,Ltd

  • 功能描述

    MOS Field Effect Transistor

更新时间:2024-6-3 21:29:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
23+
TO-220
35890
NEC
24+
TO220
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
NEC
2339+
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
NEC
23+
TO-220
15000
专做原装正品,假一罚百!
NEC
23+
TO-220AB
12093
全新原装
RENESAS(瑞萨)/IDT
23+
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
FUJI
08PB
60000
NEC-日本电气
24+25+/26+27+
TO-263-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
NEC
2021+
TO-220AB
473777
原厂授权代理,海外优势订货渠道。可提供大量库存,详
VBSEMI
19+
TO-220AB
29600
绝对原装现货,价格优势!

2SJ492芯片相关品牌

  • ALPS
  • Belling
  • CRYSTEKCRYSTAL
  • Dallas
  • Hynix
  • MIC
  • MuRata
  • MURATA1
  • PERICOM
  • SAVANTIC
  • TAITRON
  • YEONHO

2SJ492数据表相关新闻