SWITCHING

P-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

This product is P-Channel MOS Field Effect Transistor

designed for high current switching applications.

FEATURES

· Super low on-state resistance

RDS(on)1 = 100 mW (MAX.) (VGS = –10 V, ID = –8 A)

RDS(on)2 = 185 mW (MAX.) (VGS = –4 V, ID = –8 A)

· Low Ciss: Ciss = 1210 pF (TYP.)

· Built-in gate protection diode