LOW FREQUENCY POWER AMPLIFIER

SILICON P-CHANNEL MOSFET LOW FREQUENCY POWER AMPLIFIER Complementary Pair with 2SK133, 2SK134, 2SK135

LOW FREQUENCY POWER AMPLIFIER

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ (at VGS = –10 V, ID = –2.5 A) • 4 V gate drive devices. • Large current capacitance ID = –5 A

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.08Ω typ (at VGS = –10 V, ID = –2.5 A) • 4V gate drive devices. • Large current capacitance ID = –5 A

Silicon P Channel MOS FET

Description\nHigh speed power switching • Low on-resistance\n• 4 V gate drive devices.\n• Large current capacitance\n   ID = –5 A;

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ (at VGS = –10 V, ID = –2.5 A) • 4 V gate drive devices. • Large current capacitance ID = –5 A

Pch Single Power Mosfet -30V -2A 230Mohm Upak/Sc-62

The 2SJ484 is a Pch Single Power Mosfet -30V -2A 230Mohm Upak/Sc-62.

Silicon P-Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.18 Ω typ. (at VGS = –10V, ID = –1A) • Low drive current • High speed switching • 4V gate drive devices.

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.18 Ω typ. (at VGS = –10 V, ID = –1 A) • Low drive current • High speed switching • 4 V gate drive devices.

P-Channel Enhancement MOSFET

Application « PWM applications » Load switch « Power management

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.18 Ω typ. (at VGS = –10 V, ID = –1 A) • Low drive current • High speed switching • 4 V gate drive devices.

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.18 Ω typ. (at VGS = –10 V, ID = –1 A) • Low drive current • High speed switching • 4 V gate drive devices.

Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • 4V drive.

Silicon P Channel MOS FET

Description Low frequency power switching Features • Low on-resistance RDS (on) = 0.5 Ω typ. (at VGS = –4 V, ID = –100 mA) • 2.5 V gate drive devices. • Small package (MPAK).

Silicon P Channel MOS FET Low FrequencyPower Switching

Features • Low on-resistance RDS(on) = 0.5 Ω typ. (at VGS = –4V, ID = –100 mA) • 2.5V gate drive devices. • Small package (MPAK).

Silicon P Channel MOS FET

Description Low frequency power switching Features • Low on-resistance RDS (on) = 0.5 Ω typ. (at VGS = –4 V, ID = –100 mA) • 2.5 V gate drive devices. • Small package (MPAK).

Silicon P Channel MOS FET

Description Low frequency power switching Features • Low on-resistance RDS (on) = 0.5 Ω typ. (at VGS = –4 V, ID = –100 mA) • 2.5 V gate drive devices. • Small package (MPAK).

Silicon P Channel MOS FET

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P-Channel 60-V (D-S) MOSFET

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