位置：首页 > IC中文资料第5602页 > 2SJ486ZU-TR-E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ486ZU-TR-E | Silicon P Channel MOS FET Description Low frequency power switching Features • Low on-resistance RDS (on) = 0.5 Ω typ. (at VGS = –4 V, ID = –100 mA) • 2.5 V gate drive devices. • Small package (MPAK). | RENESAS 瑞萨 |   | |
Silicon P Channel MOS FET Low FrequencyPower Switching Features • Low on-resistance RDS(on) = 0.5 Ω typ. (at VGS = –4V, ID = –100 mA) • 2.5V gate drive devices. • Small package (MPAK). | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description Low frequency power switching Features • Low on-resistance RDS (on) = 0.5 Ω typ. (at VGS = –4 V, ID = –100 mA) • 2.5 V gate drive devices. • Small package (MPAK). | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET Description Low frequency power switching Features • Low on-resistance RDS (on) = 0.5 Ω typ. (at VGS = –4 V, ID = –100 mA) • 2.5 V gate drive devices. • Small package (MPAK). | RENESAS 瑞萨 | |
2SJ486ZU-TR-E产品属性
- 类型
描述
- 型号
2SJ486ZU-TR-E
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon P Channel MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
24+ |
60000 |
|||||
RENESAS/瑞萨 |
24+ |
SOT-23 |
9600 |
原装现货,优势供应,支持实单! |
|||
SHNDENGEN |
23+ |
SOT252 |
7000 |
||||
RENESAS/瑞萨 |
25+ |
SOT23-3 |
12540 |
RENESAS/瑞萨原装特价2SJ486ZU-TR-E即刻询购立享优惠#长期有货 |
|||
Shndengen |
06+ |
SOT252 |
1500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS/瑞萨 |
2019+PB |
SOT-23 |
42000 |
全新-特价大量供货房间 |
|||
CCSEMI/芯能圆 |
23+ |
SOT-23 |
50000 |
原装正品 支持实单 |
|||
MITSUBISHI/三菱 |
23+ |
TO252 |
12600 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
RENESAS/瑞萨 |
23+ |
SOT-23 |
50000 |
全新原装正品现货,支持订货 |
|||
SHINDENGEN |
24+ |
TO-252 |
4200 |
只做原装正品现货 欢迎来电查询15919825718 |
2SJ486ZU-TR-E芯片相关品牌
2SJ486ZU-TR-E规格书下载地址
2SJ486ZU-TR-E参数引脚图相关
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2SJ486ZU-TR-E数据表相关新闻
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2019-10-30
DdatasheetPDF页码索引
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