位置：首页 > IC中文资料第6257页 > 2SJ483TZ-E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ483TZ-E | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ (at VGS = –10 V, ID = –2.5 A) • 4 V gate drive devices. • Large current capacitance ID = –5 A | RENESAS 瑞萨 |   | |
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.08Ω typ (at VGS = –10 V, ID = –2.5 A) • 4V gate drive devices. • Large current capacitance ID = –5 A | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ (at VGS = –10 V, ID = –2.5 A) • 4 V gate drive devices. • Large current capacitance ID = –5 A | RENESAS 瑞萨 | |
2SJ483TZ-E产品属性
- 类型
描述
- 型号
2SJ483TZ-E
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon P Channel MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI |
24+ |
SOT-89 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
HITACHI |
25+ |
SOT89 |
2987 |
只售原装自家现货!诚信经营!欢迎来电 |
|||
Hitachi |
25+23+ |
Sot-89 |
28276 |
绝对原装正品全新进口深圳现货 |
|||
RENESAS |
2020+ |
SOT89 |
1005 |
||||
SOT-89 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
Hitachi |
26+ |
PM2.5 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
RENESAS |
24+ |
SOT89 |
3100 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
RENESAS |
23+ |
UPAK |
10000 |
原装正品,假一罚十 |
|||
RENESAS/瑞萨 |
2511 |
SOT-89 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
RENESAS/瑞萨 |
22+ |
SOT-89 |
20000 |
只做原装 |
2SJ483TZ-E规格书下载地址
2SJ483TZ-E参数引脚图相关
- 500t
- 5000
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- 2SJ486ZU-TR-E
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- 2SJ479STL-E
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- 2SJ479(L)|2SJ479(S)
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- 2SJ466
- 2SJ465
- 2SJ464
- 2SJ463A
- 2SJ463
- 2SJ462
- 2SJ461
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- 2SJ459
- 2SJ458
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2019-10-30
DdatasheetPDF页码索引
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