P-Channel Enhancement MOSFET

Application « PWM applications » Load switch « Power management

场效应管（MOSFEET)

Silicon P-Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.18 Ω typ. (at VGS = –10V, ID = –1A) • Low drive current • High speed switching • 4V gate drive devices.

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.18 Ω typ. (at VGS = –10 V, ID = –1 A) • Low drive current • High speed switching • 4 V gate drive devices.

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.18 Ω typ. (at VGS = –10 V, ID = –1 A) • Low drive current • High speed switching • 4 V gate drive devices.

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.18 Ω typ. (at VGS = –10 V, ID = –1 A) • Low drive current • High speed switching • 4 V gate drive devices.