2SJ38价格

参考价格:¥0.6500

型号:2SJ381 品牌:SANYO 备注:这里有2SJ38多少钱,2025年最近7天走势,今日出价,今日竞价,2SJ38批发/采购报价,2SJ38行情走势销售排行榜,2SJ38报价。
型号 功能描述 生产厂家 企业 LOGO 操作

P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Relay Drive, DC-DC Converter and Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON)= 0.15 Ω(typ.) • High forward transfer admittance: |Yfs| = 7.7 S (typ.) • Low leakage current: IDSS= −100 μA (max) (VDS= −100 V) • Enhancement mode: Vth= −

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Relay Drive, DC-DC Converter and Motor Drive Applications

Relay Drive, DC-DC Converter and Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON)= 0.15 Ω(typ.) • High forward transfer admittance: |Yfs| = 7.7 S (typ.) • Low leakage current: IDSS= −100 μA (max) (VDS= −100 V) • Enhancement mode: Vth= −

TOSHIBA

东芝

Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive.

SANYO

三洋

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • 2.5V drive.

SANYO

三洋

Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • 2.5V drive.

SANYO

三洋

Silicon P-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC-DC converter

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC-DC converter

RENESAS

瑞萨

Silicon P-Channel MOS FET

Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC - DC converter Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter

RENESAS

瑞萨

Silicon P-Channel MOS FET

Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC - DC converter Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter

RENESAS

瑞萨

Silicon P-Channel MOS FET

Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC - DC converter Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

Silicon P-Channel MOSFET

Features Low on-resistance Low drive current 2.5 V Gate drive device can be driven from 3 V Source Suitable for Switching regulator, DC - DC converter

KEXIN

科信电子

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter

RENESAS

瑞萨

Low Drain-Source ON Resistance

文件:59.82 Kbytes Page:2 Pages

ISC

无锡固电

Relay Drive, DC-DC Converter and Motor Drive Applications

文件:235.98 Kbytes Page:6 Pages

TOSHIBA

东芝

Relay Drive, DC-DC Converter and Motor Drive Applications

文件:192.71 Kbytes Page:6 Pages

TOSHIBA

东芝

Relay Drive, DC-DC Converter and Motor Drive Applications

文件:192.71 Kbytes Page:6 Pages

TOSHIBA

东芝

Relay Drive, DC-DC Converter and Motor Drive Applications

文件:235.98 Kbytes Page:6 Pages

TOSHIBA

东芝

Ultrahigh-Speed Switching Applications

ONSEMI

安森美半导体

Very High-Speed Switching Applications

ONSEMI

安森美半导体

Ultrahigh-Speed Switching Applications

ONSEMI

安森美半导体

P-Channel 30-V (D-S) MOSFET

文件:1.01644 Mbytes Page:9 Pages

VBSEMI

微碧半导体

Silicon P Channel MOS FET

文件:46.3 Kbytes Page:7 Pages

HITACHI-METALS

日立金属

Silicon P Channel MOS FET

文件:46.3 Kbytes Page:7 Pages

HITACHI-METALS

日立金属

P-Channel 4 0 V (D-S) MOSFET

文件:976.39 Kbytes Page:7 Pages

VBSEMI

微碧半导体

isc P-Channel MOSFET Transistor

文件:289.88 Kbytes Page:2 Pages

ISC

无锡固电

P-Channel 60-V (D-S) MOSFET

文件:989.25 Kbytes Page:8 Pages

VBSEMI

微碧半导体

Silicon P Channel MOS FET

文件:46.3 Kbytes Page:7 Pages

HITACHI-METALS

日立金属

2SJ38产品属性

  • 类型

    描述

  • 型号

    2SJ38

  • 制造商

    Toshiba America Electronic Components

  • 功能描述

    TRANS MOSFET P-CH 100V 12A 3PIN SC-67 - Rail/Tube

更新时间:2025-12-24 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SANYO/三洋
24+
NA/
6300
优势代理渠道,原装正品,可全系列订货开增值税票
SANYO/三洋
22+
SOT252
100000
代理渠道/只做原装/可含税
VBSEMI/微碧半导体
24+
TO252
7800
全新原厂原装正品现货,低价出售,实单可谈
SANYO
24+
TO-252
6230
新进库存/原装
SANYO/三洋
25+
原厂原封装
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
TOSHIBA
2023+
SOT-23
50000
原装现货
SANYO/三洋
22+
TO-252
20000
公司只有原装 品质保证
VBsemi(台湾微碧)
2447
TO-252
105000
2500个/圆盘一级代理专营品牌!原装正品,优势现货,
SANYO
1922+
SOT-252
35689
原装进口现货库存专业工厂研究所配单供货
SANYO/三洋
20+
TO-252
700
一级代理,专注军工、汽车、医疗、工业、新能源、电力

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