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2SJ38价格
参考价格:¥0.6500
型号:2SJ381 品牌:SANYO 备注:这里有2SJ38多少钱,2025年最近7天走势,今日出价,今日竞价,2SJ38批发/采购报价,2SJ38行情走势销售排行榜,2SJ38报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) Relay Drive, DC-DC Converter and Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON)= 0.15 Ω(typ.) • High forward transfer admittance: |Yfs| = 7.7 S (typ.) • Low leakage current: IDSS= −100 μA (max) (VDS= −100 V) • Enhancement mode: Vth= − | TOSHIBA 东芝 | |||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | |||
Relay Drive, DC-DC Converter and Motor Drive Applications Relay Drive, DC-DC Converter and Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON)= 0.15 Ω(typ.) • High forward transfer admittance: |Yfs| = 7.7 S (typ.) • Low leakage current: IDSS= −100 μA (max) (VDS= −100 V) • Enhancement mode: Vth= − | TOSHIBA 东芝 | |||
Ultrahigh-Speed Switching Applications Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. | SANYO 三洋 | |||
Very High-Speed Switching Applications Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • 2.5V drive. | SANYO 三洋 | |||
Ultrahigh-Speed Switching Applications Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • 2.5V drive. | SANYO 三洋 | |||
Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC-DC converter | RENESAS 瑞萨 | |||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC-DC converter | RENESAS 瑞萨 | |||
Silicon P-Channel MOS FET Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC - DC converter Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter | RENESAS 瑞萨 | |||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter | RENESAS 瑞萨 | |||
Silicon P-Channel MOS FET Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC - DC converter Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter | RENESAS 瑞萨 | |||
Silicon P-Channel MOS FET Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC - DC converter Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon P-Channel MOSFET Features Low on-resistance Low drive current 2.5 V Gate drive device can be driven from 3 V Source Suitable for Switching regulator, DC - DC converter | KEXIN 科信电子 | |||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter | RENESAS 瑞萨 | |||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter | RENESAS 瑞萨 | |||
Low Drain-Source ON Resistance 文件:59.82 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Relay Drive, DC-DC Converter and Motor Drive Applications 文件:235.98 Kbytes Page:6 Pages | TOSHIBA 东芝 | |||
Relay Drive, DC-DC Converter and Motor Drive Applications 文件:192.71 Kbytes Page:6 Pages | TOSHIBA 东芝 | |||
Relay Drive, DC-DC Converter and Motor Drive Applications 文件:192.71 Kbytes Page:6 Pages | TOSHIBA 东芝 | |||
Relay Drive, DC-DC Converter and Motor Drive Applications 文件:235.98 Kbytes Page:6 Pages | TOSHIBA 东芝 | |||
Ultrahigh-Speed Switching Applications | ONSEMI 安森美半导体 | |||
Very High-Speed Switching Applications | ONSEMI 安森美半导体 | |||
Ultrahigh-Speed Switching Applications | ONSEMI 安森美半导体 | |||
P-Channel 30-V (D-S) MOSFET 文件:1.01644 Mbytes Page:9 Pages | VBSEMI 微碧半导体 | |||
Silicon P Channel MOS FET 文件:46.3 Kbytes Page:7 Pages | HITACHI-METALS 日立金属 | |||
Silicon P Channel MOS FET 文件:46.3 Kbytes Page:7 Pages | HITACHI-METALS 日立金属 | |||
P-Channel 4 0 V (D-S) MOSFET 文件:976.39 Kbytes Page:7 Pages | VBSEMI 微碧半导体 | |||
isc P-Channel MOSFET Transistor 文件:289.88 Kbytes Page:2 Pages | ISC 无锡固电 | |||
P-Channel 60-V (D-S) MOSFET 文件:989.25 Kbytes Page:8 Pages | VBSEMI 微碧半导体 | |||
Silicon P Channel MOS FET 文件:46.3 Kbytes Page:7 Pages | HITACHI-METALS 日立金属 |
2SJ38产品属性
- 类型
描述
- 型号
2SJ38
- 制造商
Toshiba America Electronic Components
- 功能描述
TRANS MOSFET P-CH 100V 12A 3PIN SC-67 - Rail/Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANYO/三洋 |
24+ |
NA/ |
6300 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
SANYO/三洋 |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
|||
VBSEMI/微碧半导体 |
24+ |
TO252 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
|||
SANYO |
24+ |
TO-252 |
6230 |
新进库存/原装 |
|||
SANYO/三洋 |
25+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
TOSHIBA |
2023+ |
SOT-23 |
50000 |
原装现货 |
|||
SANYO/三洋 |
22+ |
TO-252 |
20000 |
公司只有原装 品质保证 |
|||
VBsemi(台湾微碧) |
2447 |
TO-252 |
105000 |
2500个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
SANYO |
1922+ |
SOT-252 |
35689 |
原装进口现货库存专业工厂研究所配单供货 |
|||
SANYO/三洋 |
20+ |
TO-252 |
700 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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2SJ38规格书下载地址
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2SJ38数据表相关新闻
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2019-10-30
DdatasheetPDF页码索引
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