位置：首页 > IC中文资料第11714页 > 2SJ386TZ-E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ386TZ-E | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC-DC converter | RENESAS 瑞萨 |   | |
Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter Application High speed power switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC-DC converter | RENESAS 瑞萨 | |
2SJ386TZ-E产品属性
- 类型
描述
- 型号
2SJ386TZ-E
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon P Channel MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI |
25+23+ |
New |
32541 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
HIT |
24+ |
TO-251 |
20000 |
||||
RENESAS |
24+ |
TO-252 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
NEC |
26+ |
ZIP |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
RENESAS/瑞萨 |
2447 |
TO-252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
RENESAS |
22+ |
TO-252 |
20000 |
公司只有原装 品质保证 |
|||
RENESAS |
24+ |
TO-252 |
16900 |
原装正品现货支持实单 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS |
21+ |
TO-252 |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
H |
TO-252 |
22+ |
6000 |
十年配单,只做原装 |
2SJ386TZ-E芯片相关品牌
2SJ386TZ-E规格书下载地址
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2019-10-30
DdatasheetPDF页码索引
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