位置：首页 > IC中文资料第7926页 > 2SJ387
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ387 | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter | RENESAS 瑞萨 |   | |
2SJ387 | Silicon P-Channel MOS FET Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC - DC converter Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | | |
2SJ387 | Silicon P-Channel MOS FET | HitachiHitachi Semiconductor 日立日立公司 | | |
2SJ387 | Silicon P-Channel MOS FET | RENESAS 瑞萨 | | |
Silicon P-Channel MOS FET Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC - DC converter Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter | RENESAS 瑞萨 | | ||
Silicon P-Channel MOSFET Features Low on-resistance Low drive current 2.5 V Gate drive device can be driven from 3 V Source Suitable for Switching regulator, DC - DC converter | KEXIN 科信电子 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter | RENESAS 瑞萨 | | ||
Silicon P-Channel MOS FET Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC - DC converter Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter | RENESAS 瑞萨 | | ||
Silicon P-Channel MOS FET | HitachiHitachi Semiconductor 日立日立公司 | |
2SJ387产品属性
- 类型
描述
- 型号
2SJ387
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
Silicon P-Channel MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI |
25+23+ |
New |
32541 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
RENESAS/瑞萨 |
23+ |
TO-252 |
15000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
24+ |
N/A |
62000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
RENESAS/瑞萨 |
2447 |
TO-252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
HITACHI/日立 |
23+ |
TO-252 |
8000 |
只做原装现货 |
|||
RENESAS/瑞萨 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
|||
HIT |
24+ |
TO-251 |
20000 |
||||
RENESAS |
23+ |
TO263 |
20000 |
全新原装假一赔十 |
|||
HITACHI |
2023+ |
TO-252 |
50000 |
原装现货 |
|||
RENESAS |
24+ |
TO-252 |
9000 |
只做原装正品 有挂有货 假一赔十 |
2SJ387规格书下载地址
2SJ387参数引脚图相关
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2019-10-30
DdatasheetPDF页码索引
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