位置：首页 > IC中文资料第7926页 > 2SJ387
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ387 | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter | RENESAS 瑞萨 |   | |
2SJ387 | Silicon P-Channel MOS FET Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC - DC converter Application High speed power switching | HITACHIHitachi Semiconductor 日立日立公司 | | |
2SJ387 | Silicon P-Channel MOS FET | HITACHIHitachi Semiconductor 日立日立公司 | | |
2SJ387 | Silicon P-Channel MOS FET | RENESAS 瑞萨 | | |
Silicon P-Channel MOS FET Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC - DC converter Application High speed power switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter | RENESAS 瑞萨 | | ||
Silicon P-Channel MOSFET Features Low on-resistance Low drive current 2.5 V Gate drive device can be driven from 3 V Source Suitable for Switching regulator, DC - DC converter | KEXIN 科信电子 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter | RENESAS 瑞萨 | | ||
Silicon P-Channel MOS FET Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC - DC converter Application High speed power switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC-DC converter | RENESAS 瑞萨 | | ||
Silicon P-Channel MOS FET | HITACHIHitachi Semiconductor 日立日立公司 | |
2SJ387产品属性
- 类型
描述
- 型号
2SJ387
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
Silicon P-Channel MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
62000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
VBSEMI/微碧半导体 |
24+ |
TO251 |
60000 |
||||
RENESAS |
25+ |
TO-252 |
8800 |
公司只做原装,详情请咨询 |
|||
RENESAS |
24+ |
TO-252 |
16900 |
原装正品现货支持实单 |
|||
RENESAS |
26+ |
TO-252 |
360000 |
进口原装现货 |
|||
HITACHI/日立 |
23+ |
TO-252 |
7000 |
||||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS |
25+ |
SOT252 |
71 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
RENESAS |
TO263 |
2110 |
全新原装进口自己库存优势 |
||||
RENESAS/瑞萨 |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
2SJ387规格书下载地址
2SJ387参数引脚图相关
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2SJ387数据表相关新闻
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2019-10-30
DdatasheetPDF页码索引
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