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2SJ20价格
参考价格：￥0.3250
型号：2SJ202 品牌：NEC 备注：这里有2SJ20多少钱，2024年最近7天走势，今日出价，今日竞价，2SJ20批发/采购报价，2SJ20行情走势销售排行榜，2SJ20报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
PCHANNELMOSTYPE(HIGHPOWERAMPLIFIERAPPLICATION) HighPowerAmplifierApplication •Highbreakdownvoltage:VDSS=−180V •Highforwardtransferadmittance:|Yfs|=4.0S(typ.) •Complementaryto2SK1529 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |  |   | |
TOSHIBAFieldEffectTransistorSiliconPChannelMOSType HighPowerAmplifierApplication •Highbreakdownvoltage:VDSS=−180V •Highforwardtransferadmittance:|Yfs|=4.0S(typ.) •Complementaryto2SK1529 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBAFieldEffectTransistorSiliconPChannelMOSType HighPowerAmplifierApplication •Highbreakdownvoltage:VDSS=−180V •Highforwardtransferadmittance:|Yfs|=4.0S(typ.) •Complementaryto2SK1529 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
PCHANNELMOSTYPE(HIGHPOWERAMPLIFIERAPPLICATIONS) High-PowerAmplifierApplication Highbreakdownvoltage:VDSS=−200V Highforwardtransferadmittance:|Yfs|=5.0S(typ.) Complementaryto2SK1530 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
High-PowerAmplifierApplication High-PowerAmplifierApplication Highbreakdownvoltage:VDSS=−200V Highforwardtransferadmittance:|Yfs|=5.0S(typ.) Complementaryto2SK1530 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
High-PowerAmplifierApplication High-PowerAmplifierApplication Highbreakdownvoltage:VDSS=−200V Highforwardtransferadmittance:|Yfs|=5.0S(typ.) Complementaryto2SK1530 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
MOSFIELDEFFECTTRANSISTOR P-CHANNELMOSFET FORSWITCHING DESCRIPTION The2SJ202isaP-channelverticaltypeMOSFETwhichcanbe drivenby2.5Vpowersupply. AstheMOSFETisdrivenbylowvoltageanddoesnotrequire considerationofdrivingcurrent,itissuitableforappliancesincluding VTRcamerasandhea | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
P-CHANNELMOSFETFORSWITCHING The2SJ202isanP-chnnalverticaltypeMOSFETwhichcanbedrivenby2.5Vpowersupply. Features ●DirectlydrivenbyICshavinga3Vpowersupply. ●Notnecessarytoconsiderdrivingcurrentbecauseofitshighinputimpedance. ●Possibletoreducethenumberofpartsbyomittingthebias | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
MOSFiedEffectTransistor ■Features ●VDS(V)=-16V ●ID=-200mA ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |  | | |
MOSFIELDEFFECTTRANSISTOR Features ●DirectlydrivenbyICshavinga3Vpoersupply. ●Notnecessarytoconsiderdrivingcurrentthankstohightinputimpedance. ●Possibletoreducethenumberofpartsbyomittingthebiasresisor. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR P-CHANNELMOSFET FORSWITCHING The2SJ203isaP-channelverticaltypeMOSFETwhichcanbe drivenby2.5Vpowersupply. The2SJ203isdrivenbylowvoltageanddoesnotrequire considerationofdrivingcurrent,itissuitableforappliances includingVCR,camerasandheadphonestereoswhi | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
P-ChannelMOSFET ■Features ●VDS(V)=-16V ●ID=-200mA ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
P-Channel60V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •High-SideSwitching •LowOn-Resistance:3 •LowThreshold:-2V(typ.) •FastSwtichingSpeed:20ns(typ.) •LowInputCapacitance:20pF(typ.) •ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
P-Channel60V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •High-SideSwitching •LowOn-Resistance:3 •LowThreshold:-2V(typ.) •FastSwtichingSpeed:20ns(typ.) •LowInputCapacitance:20pF(typ.) •ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
MOSFiedEffectTransistor Features ●DirectlydrivenbyIcshavinga5Vpowersupply. ●Haslowon-stateresistance RDS(on)=13ΩMAX.@VGS=-4.0V,ID=-10mA RDS(on)=8ΩMAX.@VGS=-10V,ID=-10mA | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
P-CHANNELMOSFETFORSWITCHING P-CHANNELMOSFETFORSWITCHING The2SJ204,P-channelverticaltypeMOSFET,isaswitchingdevicewhichcanbedrivendirectlybytheoutputofICshavinga5Vpowersource. AstheMOSFEThaslowon-stateresistanceandexcellentswitchingcharacteristics,itissuitablefordrivingactuators | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR P-CHANNELMOSFET FORSWITCHING The2SJ204,P-channelverticaltypeMOSFET,isaswitching devicewhichcanbedrivendirectlybytheoutputofICshavinga Vpowersource. The2SJ204haslowon-stateresistanceandexcellentswitching characteristics,itissuitablefordrivingactuatorss | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR P-CHANNELMOSFET FORSWITCHING DESCRIPTION The2SJ205,P-channelverticaltypeMOSFET,isaswitchingdevice whichcanbedrivenby3Vpowersupply. AstheMOSFETisdrivenbylowvoltageanddoesnotrequire considerationofdrivingcurrent,itissuitableforappliancesincluding VC | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
P-CHANNELMOSFETFORSWITCHING Features ●DirectlydrivenbyICshavinga3Vpoersupply. ●Notnecessarytoconsiderdrivingcurrentbecauseofitshighinputimpedance. ●Possibletoreducethenumberofpartsbyomittingthebiasresistor. ●Haslowon-stateresistance RDS(on)=5ΩMAX.@VGS=-2.5V,ID=-10mA RDS( | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFiedEffectTransistor ■Features ●VDS(V)=-16V ●ID=-0.5A(VGS=-10V) ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR P-CHANNELMOSFET FORSWITCHING | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR P-CHANNELMOSFET FORSWITCHING DESCRIPTION The2SJ207,P-channelverticaltypeMOSFET,isaswitchingdevice whichcanbedrivenby2.5Vpowersupply. AstheMOSFETisdrivenbylowvoltageanddoesnotrequire considerationofdrivingcurrent,itissuitableforappliancesincluding | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFiedEffectTransistor ■Features ●VDS(V)=-16V ●ID=-1A(VGS=-10V) ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR P-CHANNELMOSFET FORSWITCHING DESCRIPTION The2SJ208,P-channelverticaltypeMOSFET,isaswitchingdevice whichcanbedrivenby2.5Vpowersupply. AstheMOSFETisdrivenbylowvoltageanddoesnotrequire considerationofdrivingcurrent,itissuitableforappliancesincluding | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
P-Channel100-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Available •TrenchFET®PowerMOSFET •UltraLowOn-Resistance •SmallSize APPLICATIONS •ActiveClampCircuitsinDC/DCPowerSupplies | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR P-CHANNELMOSFET FORSWITCHING The2SJ209,P-channelverticaltypeMOSFET,isaswitching devicewhichcanbedrivendirectlybytheoutputofICshavinga 5Vpowersource. The2SJ209haslowon-stateresistanceandexcellentswitching characteristics,itissuitablefordrivingactuators | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFiedEffectTransistor Features DirectlydrivenbyIcshavinga5Vpoersupply. Notnecessarytoconsiderdrivingcurrentbecauseof itshighinputimpedance. Possibletoreducethenumberofpartsbyomittingthebiasresistor. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
P-Channel100-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Available •TrenchFET®PowerMOSFET •UltraLowOn-Resistance •SmallSize APPLICATIONS •ActiveClampCircuitsinDC/DCPowerSupplies | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
HighPowerAmplifierApplication 文件：426.58 Kbytes Page：5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
HighPowerAmplifierApplication 文件：426.58 Kbytes Page：5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
High-PowerAmplifierApplication 文件：448.62 Kbytes Page：5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
High-PowerAmplifierApplication 文件：275.09 Kbytes Page：5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
High-PowerAmplifierApplication 文件：448.62 Kbytes Page：5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
High-PowerAmplifierApplication 文件：275.09 Kbytes Page：5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
P-ChannelMOSFET 文件：1.33322 Mbytes Page：3 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
P-ChannelMOSFET 文件：1.1833 Mbytes Page：3 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
P-ChannelMOSFET 文件：1.19651 Mbytes Page：3 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
P-Channel60V(D-S)MOSFET 文件：981.27 Kbytes Page：7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
P-Channel60V(D-S)MOSFET 文件：980.31 Kbytes Page：7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
P-ChannelMOSFET 文件：1.0255 Mbytes Page：4 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
P-CHANNELMOSFETFORSWITCHING 文件：294.54 Kbytes Page：6 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFiedEffectTransistor 文件：43.24 Kbytes Page：1 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
P-ChannelMOSFET 文件：1.01312 Mbytes Page：4 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
P-CHANNELMOSFETFORSWITCHING 文件：335.45 Kbytes Page：6 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
P-ChannelMOSFET 文件：1.29311 Mbytes Page：4 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
MOSFiedEffectTransistor 文件：43.26 Kbytes Page：1 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
P-CHANNELMOSFETFORSWITCHING 文件：252.48 Kbytes Page：6 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
P-ChannelMOSFET 文件：780.12 Kbytes Page：3 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
P-ChannelMOSFET 文件：1.26402 Mbytes Page：3 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | | |
P-CHANNELMOSFETFORSWITCHING 文件：422.75 Kbytes Page：6 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
P-ChannelMOSFET 文件：1.27599 Mbytes Page：3 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | |
2SJ20产品属性
- 类型
描述
- 型号
2SJ20
- 制造商
TOSHIBA
- 制造商全称
Toshiba Semiconductor
- 功能描述
High Power Amplifier Application
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
23+ |
NA/ |
3550 |
原装现货,当天可交货,原型号开票 |
|||
FAIRCHILD |
TO92 |
1500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
||||
NEC |
24+ |
SOT323 |
990000 |
明嘉莱只做原装正品现货 |
|||
RENESAS/瑞萨 |
22+ |
SSPSC-70 |
354000 |
||||
NEC |
2022 |
SOT-323SC70 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
RENESAS/瑞萨 |
新年份 |
SSPSC-70 |
85000 |
原装正品大量现货,要多可发货,实单带接受价来谈! |
|||
NEC |
21+ |
SOT323 |
3000 |
原装现货假一赔十 |
|||
SOT-323 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
Renesas |
2023+ |
SSPSC-70 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
VB |
2019 |
SC-70 |
55000 |
绝对原装正品假一罚十! |
2SJ20芯片相关品牌
2SJ20规格书下载地址
2SJ20参数引脚图相关
- 500t
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
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- 3q1
- 3g汽车
- 3579
- 35001
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- 303c
- 2SJ284
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- 2SJ278MY
- 2SJ246STL
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- 2SJ244
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- 2SJ238
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- 2SJ220S
- 2SJ220L
- 2SJ220
- 2SJ219STL
- 2SJ218
- 2SJ217
- 2SJ213
- 2SJ212
- 2SJ211
- 2SJ210C
- 2SJ210
- 2SJ209
- 2SJ208
- 2SJ207
- 2SJ206
- 2SJ205
- 2SJ204
- 2SJ203
- 2SJ202
- 2SJ201
- 2SJ200
- 2SJ199
- 2SJ198
- 2SJ197
- 2SJ196
- 2SJ195
- 2SJ194
- 2SJ193
- 2SJ192
- 2SJ191
- 2SJ190
- 2SJ189
- 2SJ188
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- 2SJ186CYTL
- 2SJ186
- 2SJ185
- 2SJ184
- 2SJ183
- 2SJ182S
- 2SJ182L
- 2SJ182
- 2SJ179
- 2SJ168TE85LF
- 2SJ168
- 2SJ166
- 2SJ146
- 2SJ133-Z-T1
- 2SJ133-Z-E1
- 2SJ132-Z-T2
- 2SJ132-Z-T1
2SJ20数据表相关新闻
2SJ652-1E 绝缘栅场效应管(MOSFET)
2SJ652-1E原装正品现货供应
2024-3-232SD669AL-TO92NLB-C-TG_UTC代理商
2SD669AL-TO92NLB-C-TG_UTC代理商
2023-2-172SD882SL-TO92B-P-TG_UTC代理商
2SD882SL-TO92B-P-TG_UTC代理商
2023-2-82SD669AL-TO126T-D-TG_UTC代理商
2SD669AL-TO126T-D-TG_UTC代理商
2023-2-22SK1485-T1
2SK1485-T1，当天发货0755-82732291全新原装现货或门市自取.
2020-9-122SK1985
2SK1985，全新原装当天发货或门市自取0755-82732291.
2019-10-30
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