P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATION)

High Power Amplifier Application • High breakdown voltage : VDSS = −180 V • High forward transfer admittance : |Yfs| = 4.0 S (typ.) • Complementary to 2SK1529

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

High Power Amplifier Application • High breakdown voltage : VDSS = −180 V • High forward transfer admittance : |Yfs| = 4.0 S (typ.) • Complementary to 2SK1529

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID=-10A@ TC=25℃ · Drain Source Voltage -VDSS= -180V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= -10V DESCRIPTION · Motor Drive, DC-DC Converter, Power Switch and Solenoid Drive.

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

High Power Amplifier Application • High breakdown voltage : VDSS = −180 V • High forward transfer admittance : |Yfs| = 4.0 S (typ.) • Complementary to 2SK1529

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

High-Power Amplifier Application

High-Power Amplifier Application High breakdown voltage : VDSS= −200 V High forward transfer admittance : |Yfs| = 5.0 S (typ.) Complementary to 2SK1530

P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)

High-Power Amplifier Application High breakdown voltage : VDSS= −200 V High forward transfer admittance : |Yfs| = 5.0 S (typ.) Complementary to 2SK1530

High-Power Amplifier Application

High-Power Amplifier Application High breakdown voltage : VDSS= −200 V High forward transfer admittance : |Yfs| = 5.0 S (typ.) Complementary to 2SK1530

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SJ202 is a P-channel vertical type MOS FET which can be driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VTR cameras and hea

P-CHANNEL MOS FET FOR SWITCHING

The 2SJ202 is an P-chnnal vertical type MOS FET which can be driven by 2.5 V power supply. Features ● Directly driven by ICs having a 3V power supply. ● Not necessary to consider driving current because of its high input impedance. ● Possible to reduce the number of parts by omitting the bias

MOS FIELD EFFECT TRANSISTOR

Features ● Directly driven by ICs having a 3V poer supply. ● Not necessary to consider driving current thanks to hight input impedance. ● Possible to reduce the number of parts by omitting the bias resisor.

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOSFET FOR SWITCHING The 2SJ203 is a P-channel vertical type MOSFET which can be driven by 2.5 V power supply. The 2SJ203 is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VCR, cameras and headphone stereos whi

MOS Fied Effect Transistor

■ Features ● VDS (V) =-16V ● ID =-200m A ● RDS(ON)

P-Channel MOSFET

■ Features ● VDS (V) =-16V ● ID =-200m A ● RDS(ON)

P-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • High-Side Switching • Low On-Resistance: 3  • Low Threshold: - 2 V (typ.) • Fast Swtiching Speed: 20 ns (typ.) • Low Input Capacitance: 20 pF (typ.) • Compliant to RoHS Directive 2002/95/EC

P-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • High-Side Switching • Low On-Resistance: 3  • Low Threshold: - 2 V (typ.) • Fast Swtiching Speed: 20 ns (typ.) • Low Input Capacitance: 20 pF (typ.) • Compliant to RoHS Directive 2002/95/EC

MOS Fied Effect Transistor

Features ● Directly driven by Ics having a 5V power supply. ● Has low on-state resistance RDS(on)=13 Ω MAX.@VGS=-4.0V,ID=-10mA RDS(on)=8 Ω MAX.@VGS=-10V,ID=-10mA

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOSFET FOR SWITCHING The 2SJ204, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a V power source. The 2SJ204 has low on-state resistance and excellent switching characteristics, it is suitable for driving actuators s

P-CHANNEL MOS FET FOR SWITCHING

P-CHANNEL MOSFET FOR SWITCHING The 2SJ204, P-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. As the MOS FET has low on-state resistance and excellent switching characteristics, it is suitable for driving actuators

P-CHANNEL MOS FET FOR SWITCHING

Features ● Directly driven by ICs having a 3V poer supply. ● Not necessary to consider driving current because of its high input impedance. ● Possible to reduce the number of parts by omitting the bias resistor. ● Has low on-state resistance RDS(on)=5Ω MAX.@VGS=-2.5V,ID=-10mA RDS(

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SJ205, P-channel vertical type MOS FET, is a switching device which can be driven by 3 V power supply. As the MOS FET is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VC

MOS Fied Effect Transistor

■ Features ● VDS (V) =-16V ● ID =-0.5 A (VGS =-10V) ● RDS(ON)

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FET FOR SWITCHING

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SJ207, P-channel vertical type MOS FET, is a switching device which can be driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including

MOS Fied Effect Transistor

■ Features ● VDS (V) =-16V ● ID =-1 A (VGS =-10V) ● RDS(ON)

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SJ208, P-channel vertical type MOS FET, is a switching device which can be driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOSFET FOR SWITCHING The 2SJ209, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. The 2SJ209 has low on-state resistance and excellent switching characteristics, it is suitable for driving actuators

MOS Fied Effect Transistor

Features Directly driven by Ics having a 5V poer supply. Not necessary to consider driving current because of its high input impedance. Possible to reduce the number of parts by omitting the biasresistor.

P-Channel 100-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • Ultra Low On-Resistance • Small Size APPLICATIONS • Active Clamp Circuits in DC/DC Power Supplies

P-Channel 100-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • Ultra Low On-Resistance • Small Size APPLICATIONS • Active Clamp Circuits in DC/DC Power Supplies

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