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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ200-Y | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type High Power Amplifier Application • High breakdown voltage : VDSS = −180 V • High forward transfer admittance : |Yfs| = 4.0 S (typ.) • Complementary to 2SK1529 | TOSHIBA 东芝 |   | |
丝印代码：J200；P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATION) High Power Amplifier Application • High breakdown voltage : VDSS = −180 V • High forward transfer admittance : |Yfs| = 4.0 S (typ.) • Complementary to 2SK1529 | TOSHIBA 东芝 | | ||
丝印代码：J200；TOSHIBA Field Effect Transistor Silicon P Channel MOS Type High Power Amplifier Application • High breakdown voltage : VDSS = −180 V • High forward transfer admittance : |Yfs| = 4.0 S (typ.) • Complementary to 2SK1529 | TOSHIBA 东芝 | | ||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | | ||
丝印代码：J200；High Power Amplifier Application 文件：426.58 Kbytes Page：5 Pages | TOSHIBA 东芝 | |
2SJ200-Y产品属性
- 类型
描述
- 型号
2SJ200-Y
- 制造商
Toshiba America Electronic Components
- 功能描述
TRANS MOSFET P-CH 180V 10A 3PIN TO-3P(N) - Rail/Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
20+ |
SOT323 |
32970 |
原装优势主营型号-可开原型号增税票 |
|||
FAIRCHILD/仙童 |
2026+ |
TO-92 |
56468 |
百分百原装现货 实单必成 |
|||
TOSHIBA |
12+ |
TO-3P |
8 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
TOSHIBA |
24+/25+ |
166 |
原装正品现货库存价优 |
||||
TOSHIBA(东芝) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
东芝进口 |
23+ |
TO-3PL |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
Toshiba |
24+ |
SOT23 |
6980 |
原装现货,可开13%税票 |
|||
TOSHIBA |
18+ |
TO-3P |
85600 |
保证进口原装可开17%增值税发票 |
|||
FAIRCHILD/仙童 |
25+ |
TO-92 |
880000 |
明嘉莱只做原装正品现货 |
|||
SOT-323 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
2SJ200-Y芯片相关品牌
2SJ200-Y规格书下载地址
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2019-10-30
DdatasheetPDF页码索引
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