MOS FIELD EFFECT TRANSISTOR

Features ● Directly driven by ICs having a 3V poer supply. ● Not necessary to consider driving current thanks to hight input impedance. ● Possible to reduce the number of parts by omitting the bias resisor.

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOSFET FOR SWITCHING The 2SJ203 is a P-channel vertical type MOSFET which can be driven by 2.5 V power supply. The 2SJ203 is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VCR, cameras and headphone stereos whi

MOS Fied Effect Transistor

■ Features ● VDS (V) =-16V ● ID =-200m A ● RDS(ON)

Power MOSFETs-Power MOSFETs for Automotive

P-Channel MOSFET

■ Features ● VDS (V) =-16V ● ID =-200m A ● RDS(ON)

P-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • High-Side Switching • Low On-Resistance: 3  • Low Threshold: - 2 V (typ.) • Fast Swtiching Speed: 20 ns (typ.) • Low Input Capacitance: 20 pF (typ.) • Compliant to RoHS Directive 2002/95/EC

P-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • High-Side Switching • Low On-Resistance: 3  • Low Threshold: - 2 V (typ.) • Fast Swtiching Speed: 20 ns (typ.) • Low Input Capacitance: 20 pF (typ.) • Compliant to RoHS Directive 2002/95/EC

P-Channel MOSFET

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