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2SJ18价格
参考价格：￥0.8450
型号：2SJ182 品牌：HITACHI 备注：这里有2SJ18多少钱，2025年最近7天走势，今日出价，今日竞价，2SJ18批发/采购报价，2SJ18行情走势销售排行榜，2SJ18报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ18 | V-FET REPLACEMENT 文件：3.10117 Mbytes Page：8 Pages | SonySony Corporation 索尼 |   | |
P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR I P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | RENESAS 瑞萨 | | ||
Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | RENESAS 瑞萨 | | ||
P-Channel MOS FET For High-Speed Switching Features ● Low on-resistance ● High speed switching ● Low drive current ● No secondary breakdown ● Suitable for switching regulator and DC-DC converter | KEXIN 科信电子 | | ||
Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | RENESAS 瑞萨 | | ||
SILICON SPEED POWER SWITCHING Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
SILICON SPEED POWER SWITCHING Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
SILICON SPEED POWER SWITCHING Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
SILICON P-CHANNEL MOS FET SILICON P-CHANNEL MOS FET | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
MOS FIELD EFFECT TRANSISTOR P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING | RENESAS 瑞萨 | | ||
P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR P-CHANNEL MOSFET FOR SWITCHING The 2SJ185 is a P-channel vertical type MOSFET which can be driven by 2.5 V power supply. The 2SJ185 is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VTR cameras and headphone stereos whic | RENESAS 瑞萨 | | ||
MOS Fied Effect Transistor Features ● Directly driven by Ics having a 3V poer supply. ● Not necessary to consider driving current because of its high input impedance. ● Possible to reduce the number of parts by omitting the bias resistor | KEXIN 科信电子 | | ||
Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Suitable for motor drive, DC-DC converter, power switch and solenoid drive | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Suitable for motor drive, DC-DC converter, power switch and solenoid drive | RENESAS 瑞萨 | | ||
Very High-Speed Switching Applications Features • Low ON resistance • Very high-speed switching • Low-voltage drive | SANYO 三洋 | | ||
Very High-Speed Switching Applications Features • Low ON resistance • Very high-speed switching • Low-voltage drive | SANYO 三洋 | | ||
Very High-Speed Switching Applications Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive. | SANYO 三洋 | | ||
Silicon P Channel MOS FET | RENESAS 瑞萨 | | ||
Silicon P-Channel MOS FET | HitachiHitachi Semiconductor 日立日立公司 | | ||
Power switching MOSFET | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET 文件：109.92 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：121.46 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：121.46 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
P-Channel MOSFET 文件：1.24481 Mbytes Page：4 Pages | KEXIN 科信电子 | | ||
Silicon P Channel MOS FET 文件：121.46 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
P-Channel 4 0 V (D-S) MOSFET 文件：976.59 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
P-Channel 60-V (D-S) MOSFET 文件：988.33 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
P-Channel MOSFET 文件：1.28614 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
P-Channel MOSFET 文件：1.30199 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
P-Channel 60 V (D-S) MOSFET 文件：980.44 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
P-Channel 60 V (D-S) MOSFET 文件：980.39 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
P-Channel 60 V (D-S) MOSFET 文件：980.36 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
Silicon P Channel MOS FET 文件：95.51 Kbytes Page：9 Pages | RENESAS 瑞萨 | |
2SJ18产品属性
- 类型
描述
- 型号
2SJ18
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI/日立 |
2450+ |
TO252 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
RENESAS |
26+ |
SOT23-3 |
360000 |
进口原装现货 |
|||
HITACHI |
24+ |
TO-252 |
9700 |
绝对原装正品现货假一罚十 |
|||
NEC |
25+ |
SOT-23 |
40631 |
NEC全新特价2SJ185-T1B-A即刻询购立享优惠#长期有货 |
|||
NEC |
16+ |
SOT-23 |
3560 |
进口原装现货/价格优势! |
|||
onsemi(安森美) |
24+ |
- |
8498 |
支持大陆交货,美金交易。原装现货库存。 |
|||
RENESAS/瑞萨 |
2019+ |
SOT-89 |
78550 |
原厂渠道 可含税出货 |
|||
HITACHI |
2023+ |
TO-252 |
50000 |
原装现货 |
|||
RENESAS/瑞萨 |
2025+ |
SOT-89 |
5000 |
原装进口价格优 请找坤融电子! |
|||
RENESAS |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
2SJ18芯片相关品牌
2SJ18规格书下载地址
2SJ18参数引脚图相关
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- 2SH-C-06-TS
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- 2SH-C-05-TR
2SJ18数据表相关新闻
2SJ652-1E 绝缘栅场效应管(MOSFET)
2SJ652-1E 原装正品 现货供应
2024-3-232SD669AL-TO92NLB-C-TG_UTC代理商
2SD669AL-TO92NLB-C-TG_UTC代理商
2023-2-172SD882SL-TO92B-P-TG_UTC代理商
2SD882SL-TO92B-P-TG_UTC代理商
2023-2-82SD669AL-TO126T-D-TG_UTC代理商
2SD669AL-TO126T-D-TG_UTC代理商
2023-2-22SK1485-T1
2SK1485-T1，当天发货0755-82732291全新原装现货或门市自取.
2020-9-122SK1985
2SK1985，全新原装当天发货或门市自取0755-82732291.
2019-10-30
DdatasheetPDF页码索引
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