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位置：首页 > IC中文资料第6017页 > 2SJ18

2SJ18价格

参考价格：￥0.8450

型号：2SJ182 品牌：HITACHI 备注：这里有2SJ18多少钱，2025年最近7天走势，今日出价，今日竞价，2SJ18批发/采购报价，2SJ18行情走势销售排行榜，2SJ18报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SJ18

V-FET REPLACEMENT

文件：3.10117 Mbytes Page：8 Pages

SonySony Semiconductor Solutions Group

索尼

Sony
2SJ180

P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC
2SJ180

MOS FIELD EFFECT TRANSISTOR I

P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SJ181

Silicon P-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

Hitachi
2SJ181

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SJ181L

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SJ181L

Silicon P-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

Hitachi
2SJ181L-E

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SJ181S

Silicon P-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

Hitachi
2SJ181S

P-Channel MOS FET For High-Speed Switching

Features ● Low on-resistance ● High speed switching ● Low drive current ● No secondary breakdown ● Suitable for switching regulator and DC-DC converter

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SJ181S

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SJ181STL-E

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SJ182

SILICON SPEED POWER SWITCHING

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

Hitachi
2SJ182L

SILICON SPEED POWER SWITCHING

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

Hitachi
2SJ182S

SILICON SPEED POWER SWITCHING

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

Hitachi
2SJ183

SILICON P-CHANNEL MOS FET

SILICON P-CHANNEL MOS FET

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
2SJ184

P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC
2SJ184

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SJ185

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOSFET FOR SWITCHING The 2SJ185 is a P-channel vertical type MOSFET which can be driven by 2.5 V power supply. The 2SJ185 is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VTR cameras and headphone stereos whic

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SJ185

P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC
2SJ185

MOS Fied Effect Transistor

Features ● Directly driven by Ics having a 3V poer supply. ● Not necessary to consider driving current because of its high input impedance. ● Possible to reduce the number of parts by omitting the bias resistor

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SJ186

Silicon P-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

HitachiHitachi Semiconductor

日立日立公司

Hitachi
2SJ186

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SJ186CYEL-E

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SJ187

Very High-Speed Switching Applications

Features • Low ON resistance • Very high-speed switching • Low-voltage drive

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SJ188

Very High-Speed Switching Applications

Features • Low ON resistance • Very high-speed switching • Low-voltage drive

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SJ189

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SJ181(L)_15

Silicon P Channel MOS FET

文件：109.92 Kbytes Page：7 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SJ181_11

Silicon P Channel MOS FET

文件：121.46 Kbytes Page：7 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SJ181L-E

Silicon P Channel MOS FET

文件：121.46 Kbytes Page：7 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SJ181S_15

P-Channel MOSFET

文件：1.24481 Mbytes Page：4 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SJ181STR-E

Silicon P Channel MOS FET

文件：121.46 Kbytes Page：7 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SJ182L

P-Channel 4 0 V (D-S) MOSFET

文件：976.59 Kbytes Page：7 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
2SJ182S

P-Channel 60-V (D-S) MOSFET

文件：988.33 Kbytes Page：8 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
2SJ185_15

P-Channel MOSFET

文件：1.28614 Mbytes Page：3 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SJ185-3

P-Channel MOSFET

文件：1.30199 Mbytes Page：3 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SJ185-T1B

P-Channel 60 V (D-S) MOSFET

文件：980.44 Kbytes Page：7 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
2SJ185-T1B-A

P-Channel 60 V (D-S) MOSFET

文件：980.39 Kbytes Page：7 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
2SJ185-T2B

P-Channel 60 V (D-S) MOSFET

文件：980.36 Kbytes Page：7 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
2SJ186_15

Silicon P Channel MOS FET

文件：95.51 Kbytes Page：9 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

2SJ18产品属性

  • 类型

    描述

  • 型号

    2SJ18

  • 制造商

    NEC

  • 制造商全称

    NEC

  • 功能描述

    P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

2SJ18供应商更多...

更新时间：2025-8-6 9:24:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市坤融电子科技有限公司
2SJ182STR
RENESA
24+
TO-252
6000
只做原厂渠道 可追溯货源
询价
深圳市威雅利发展有限公司
2SJ189-TL
SANYO
04+
SOT-252
1380
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市盈慧通电子有限公司
2SJ186CYTL-E
RENSAS
2511
SOT-89
3685
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
询价
深圳市纳艾斯科技有限公司
2SJ189
SANYO
24+
TO-252
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
询价
深圳市勤思达科技有限公司
2SJ189-TL
SANYO
24+
TO252
5000
全新原装正品,现货销售
询价
深圳市中联芯电子有限公司
2SJ182S
VBsemi
24+
TO252
9000
只做原装正品 有挂有货 假一赔十
询价
深圳市纳立科技有限公司
2SJ187-TD-E
三年内
1983
只做原装正品
询价
深圳市澳亿芯电子科技有限公司
2SJ185-T2B
NEC
12+
SOT23
2800
旗舰店
询价
深圳市正迈科技有限公司
2SJ185-T2B
NEC
23+
NA
19854
专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品
询价
深圳市高捷芯城科技有限公司
2SJ187-TD-E
onsemi(安森美)
24+
-
8498
支持大陆交货,美金交易。原装现货库存。
询价

2SJ18芯片相关品牌

  • ANALOGICTECH
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  • EXXELIA
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  • P-TEC
  • WECO
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