位置：首页 > IC中文资料第6017页 > 2SJ181
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ181 | Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 |   | |
2SJ181 | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | RENESAS 瑞萨 | | |
Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | RENESAS 瑞萨 | | ||
P-Channel MOS FET For High-Speed Switching Features ● Low on-resistance ● High speed switching ● Low drive current ● No secondary breakdown ● Suitable for switching regulator and DC-DC converter | KEXIN 科信电子 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | RENESAS 瑞萨 | | ||
Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：109.92 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：121.46 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：121.46 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
P-Channel MOSFET 文件：1.24481 Mbytes Page：4 Pages | KEXIN 科信电子 | | ||
Silicon P Channel MOS FET 文件：121.46 Kbytes Page：7 Pages | RENESAS 瑞萨 | |
2SJ181产品属性
- 类型
描述
- 型号
2SJ181
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
Silicon P-Channel MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
101 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
RENESAS(瑞萨)/IDT |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
||||
RENESAS/瑞萨 |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
|||
原装 |
25+ |
TO-252 |
20300 |
原装特价2SJ181S即刻询购立享优惠#长期有货 |
|||
HITACHI |
00+ |
18000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
||||
RENESAS/瑞萨 |
2450+ |
TO252 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
CHINAXYJ |
23+ |
TO-252 |
9868 |
专做原装正品,假一罚百! |
|||
HITACHI |
2023+ |
TO-252 |
50000 |
原装现货 |
|||
RENESAS/瑞萨 |
23+ |
DPAK(L)-(1)TO-251 |
2000000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
RENESAS |
24+ |
18+ |
16900 |
原装正品现货支持实单 |
2SJ181芯片相关品牌
2SJ181规格书下载地址
2SJ181参数引脚图相关
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- 5000
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2SJ181数据表相关新闻
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2019-10-30
DdatasheetPDF页码索引
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