| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ181 | Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SJ181 | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | RENESAS 瑞萨 | | |
2SJ181 | Silicon P Channel MOS FET | RENESAS 瑞萨 | | |
2SJ181 | Silicon P-Channel MOS FET | HITACHIHitachi Semiconductor 日立日立公司 | | |
Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | RENESAS 瑞萨 | | ||
P-Channel MOS FET For High-Speed Switching Features ● Low on-resistance ● High speed switching ● Low drive current ● No secondary breakdown ● Suitable for switching regulator and DC-DC converter | KEXIN 科信电子 | | ||
Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | RENESAS 瑞萨 | | ||
Silicon P-Channel MOS FET | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET 文件：109.92 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：121.46 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：121.46 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
P-Channel MOSFET 文件：1.24481 Mbytes Page：4 Pages | KEXIN 科信电子 | | ||
Silicon P Channel MOS FET 文件：121.46 Kbytes Page：7 Pages | RENESAS 瑞萨 | |
2SJ181产品属性
- 类型
描述
- 封装类型：
DPAK(L)-(1)/TO-251
- Nch/Pch：
Pch
- 通道数：
Single
- 配置[器件]：
Built-In SBD
- VDSS (V) 最大值：
-600
- ID (A)：
-0.5
- RDS (ON)(mΩ) 最大值@10V或8V：
25000
- Ciss (pF) 典型值：
220
- Vgs (off) (V) 最大值：
-4
- VGSS (V)：
15
- Pch (W)：
20
- 应用：
Industrial
- 安装类型：
Through Hole
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
2511 |
18+ |
409 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
原装 |
25+ |
TO-252 |
20300 |
原装特价2SJ181S即刻询购立享优惠#长期有货 |
|||
RENESAS/瑞萨 |
2450+ |
TO252 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
RENESAS |
22+ |
18+ |
20000 |
公司只有原装 品质保证 |
|||
RENESAS/瑞萨 |
23+ |
DPAK(L)-(1)TO-251 |
2000000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
26+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
HITACHI/日立 |
23+ |
TO252 |
6500 |
专注配单,只做原装进口现货 |
|||
RENESAS/瑞萨 |
2447 |
SOT252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
RENESAS/瑞萨 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
|||
24+ |
2700 |
2SJ181规格书下载地址
2SJ181参数引脚图相关
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2SJ181数据表相关新闻
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2019-10-30
DdatasheetPDF页码索引
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