位置：首页 > IC中文资料第11970页 > 2SJ181S
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ181S | Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 |   | |
2SJ181S | P-Channel MOS FET For High-Speed Switching Features ● Low on-resistance ● High speed switching ● Low drive current ● No secondary breakdown ● Suitable for switching regulator and DC-DC converter | KEXIN 科信电子 | | |
2SJ181S | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | RENESAS 瑞萨 | | |
2SJ181S | Power MOSFETs | RENESAS 瑞萨 | | |
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | RENESAS 瑞萨 | | ||
Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | RENESAS 瑞萨 | | ||
P-Channel MOSFET 文件：1.24481 Mbytes Page：4 Pages | KEXIN 科信电子 | | ||
Silicon P Channel MOS FET 文件：121.46 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：109.92 Kbytes Page：7 Pages | RENESAS 瑞萨 | |
2SJ181S产品属性
- 类型
描述
- 型号
2SJ181S
- 制造商
KEXIN
- 制造商全称
Guangdong Kexin Industrial Co.,Ltd
- 功能描述
P-Channel MOS FET For High-Speed Switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
2511 |
TO-252 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
RENESAS |
25+23+ |
TO252251 |
18617 |
绝对原装正品全新进口深圳现货 |
|||
RENESAS |
16+ |
TO252 |
2132 |
原装 |
|||
RENESAS/瑞萨 |
2447 |
SOT252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
HITACHI |
1922+ |
SOT-252 |
35689 |
原装进口现货库存专业工厂研究所配单供货 |
|||
HITACHI/日立 |
23+ |
TO252 |
6500 |
专注配单,只做原装进口现货 |
|||
RENESAS/瑞萨 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
|||
RENESAS/瑞萨 |
2450+ |
TO252 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
RENESAS瑞萨/HITACHI日立 |
24+ |
TO-252 |
11500 |
新进库存/原装 |
|||
RENESAS |
25+ |
TO-252 |
35400 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
2SJ181S规格书下载地址
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2019-10-30
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