位置:首页 > IC中文资料第11970页 > 2SJ181S
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
2SJ181S | Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | ||
2SJ181S | P-Channel MOS FET For High-Speed Switching Features ● Low on-resistance ● High speed switching ● Low drive current ● No secondary breakdown ● Suitable for switching regulator and DC-DC converter | KEXIN 科信电子 | ||
2SJ181S | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | RENESAS 瑞萨 | ||
Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | RENESAS 瑞萨 | |||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | RENESAS 瑞萨 | |||
P-Channel MOSFET 文件:1.24481 Mbytes Page:4 Pages | KEXIN 科信电子 | |||
Silicon P Channel MOS FET 文件:121.46 Kbytes Page:7 Pages | RENESAS 瑞萨 | |||
Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | RENESAS 瑞萨 | |||
Silicon P Channel MOS FET 文件:109.92 Kbytes Page:7 Pages | RENESAS 瑞萨 |
2SJ181S产品属性
- 类型
描述
- 型号
2SJ181S
- 制造商
KEXIN
- 制造商全称
Guangdong Kexin Industrial Co.,Ltd
- 功能描述
P-Channel MOS FET For High-Speed Switching
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
HITACHI/日立 |
24+ |
NA/ |
5728 |
原装现货,当天可交货,原型号开票 |
|||
RENESAS/瑞萨 |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
|||
原装 |
25+ |
TO-252 |
20300 |
原装特价2SJ181S即刻询购立享优惠#长期有货 |
|||
HITACHI |
00+ |
18000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
||||
RENESAS/瑞萨 |
2450+ |
TO252 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
HITACHI |
2002 |
TO252-3 |
2398 |
原装现货海量库存欢迎咨询 |
|||
RENESAS |
25+23+ |
TO252251 |
18617 |
绝对原装正品全新进口深圳现货 |
|||
HITACHI |
24+ |
SOT252 |
2987 |
只售原装自家现货!诚信经营!欢迎来电 |
|||
RENESAS |
25+ |
TO-252 |
35400 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
RENESAS |
24+ |
18+ |
16900 |
原装正品现货支持实单 |
2SJ181S芯片相关品牌
2SJ181S规格书下载地址
2SJ181S参数引脚图相关
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2SJ181S数据表相关新闻
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2019-10-30
DdatasheetPDF页码索引
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