| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ181L | Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SJ181L | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | RENESAS 瑞萨 | | |
2SJ181L | Power MOSFETs | RENESAS 瑞萨 | | |
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：121.46 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | HITACHIHitachi Semiconductor 日立日立公司 | |
2SJ181L产品属性
- 类型
描述
- 封装类型：
DPAK(L)-(1)/TO-251
- Nch/Pch：
Pch
- 通道数：
Single
- 配置[器件]：
Built-In SBD
- VDSS (V) 最大值：
-600
- ID (A)：
-0.5
- RDS (ON)(mΩ) 最大值@10V或8V：
25000
- Ciss (pF) 典型值：
220
- Vgs (off) (V) 最大值：
-4
- VGSS (V)：
15
- Pch (W)：
20
- 应用：
Industrial
- 安装类型：
Through Hole
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
23+ |
DPAK(L)-(1)TO-251 |
2000000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
24+ |
2000 |
||||||
RENESAS/瑞萨 |
2022+ |
TO-251 |
50000 |
原厂代理 终端免费提供样品 |
2SJ181L规格书下载地址
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2019-10-30
DdatasheetPDF页码索引
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