Silicon P-Channel MOS FET

Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes

Silicon P Channel MOS FET

Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes

Silicon P Channel MOS FET

Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes

Silicon P Channel MOS FET

Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes

Silicon P-Channel MOS FET

Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes

Silicon P Channel MOS FET

Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes

Silicon P Channel MOS FET

Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -7A@ TC=25℃ ·Drain Source Voltage -VDSS= -160V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1Ω(Max)@VGS = -10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Silicon P-Channel MOS FET

Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes

Silicon P Channel MOS FET

Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes

Silicon P-Channel Junction FET

Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 ■ Features ● Low ON-resistance ● Low-noise characteristics

For General Switching

Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 ■ Features ● Low ON-resistance ● Low-noise characteristics

For Switching

Silicon P-Channel Junction FET For switching Complementary to 2SK1104 ■ Features ● Low ON-resistance ● Low-noise characteristics

Silicon P-Channel Junction FET

Silicon P-Channel Junction FET For switching Complementary to 2SK1104 ■ Features ● Low ON-resistance ● Low-noise characteristics

P-CHANNEL MOS FET FOR SWITCHING

P-CHANNEL MOS FET FOR SWITCHING The 2SJ165, P-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICx having a 5 V power source. As the MOS FET has low on-state resistance and excellent switching characteristics, it is suitable for driven actuators

MOS FIELD EFFECT TRANSISTOF

P-CHANNEL MOS FET FOR SWITCHING

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

MOS Fied Effect Transistor

Features • Directly driven by Ics having a 5V poer supply. • Not necessary to consider dreving current because of its high input impedance. • Possible to reduce the number of parts by omitting the bias resistor.

P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

P CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH, INTERFACE APPLICATIONS)

High Speed Switching Applications Analog Switch Applications Interface Applications • Excellent switching time: ton = 14 ns (typ.) • High forward transfer admittance: |Yfs| = 100 mS (min) • Low on resistance: RDS (ON) = 1.3 Ω (typ.) • Enhancement-mode • Complementary to 2SK1

P CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH, INTERFACE APPLICATIONS)

High Speed Switching Applications Analog Switch Applications Interface Applications • Excellent switching time: ton= 14 ns (typ.) • High forward transfer admittance: |Yfs| = 100 mS (min) @ID= −50 mA • Low on resistance: RDS (ON)= 1.3 Ω(typ.) @ ID= −50 mA • Enhancement-mo

1.7Q 60V P-Channel MOSFET

Typical Applications Line current interrupter in telephone sets © High speed and line transformer drivers

Silicon P Channel MOS FET

文件：89.92 Kbytes Page：8 Pages

Power MOSFETs

Power MOSFETs

封装/外壳：TO-220-3 整包 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET P-CH 160V 7A TO3P 分立半导体产品 晶体管 - FET，MOSFET - 单个

Silicon P-Channel Junction FET

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P-Channel 60 V (D-S) MOSFET

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Silicon P Channel MOS Type

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Silicon P Channel MOS Type

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Silicon P Channel MOS Type

文件：557.52 Kbytes Page：5 Pages