2SJ16价格

参考价格:¥0.3250

型号:2SJ166 品牌:NEC 备注:这里有2SJ16多少钱,2024年最近7天走势,今日出价,今日竞价,2SJ16批发/采购报价,2SJ16行情走势销售排行榜,2SJ16报价。
型号 功能描述 生产厂家&企业 LOGO 操作

SiliconP-ChannelMOSFET

Lowfrequencypoweramplifier Complementarypairwith2SK1056,2SK1057and2SK1058 •Goodfrequencycharacteristic •Highspeedswitching •Wideareaofsafeoperation •Enhancement-mode •Goodcomplementarycharacteristics •Equippedwithgateprotectiondiodes

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconPChannelMOSFET

Lowfrequencypoweramplifier Complementarypairwith2SK1056,2SK1057and2SK1058 •Goodfrequencycharacteristic •Highspeedswitching •Wideareaofsafeoperation •Enhancement-mode •Goodcomplementarycharacteristics •Equippedwithgateprotectiondiodes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconPChannelMOSFET

Lowfrequencypoweramplifier Complementarypairwith2SK1056,2SK1057and2SK1058 •Goodfrequencycharacteristic •Highspeedswitching •Wideareaofsafeoperation •Enhancement-mode •Goodcomplementarycharacteristics •Equippedwithgateprotectiondiodes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconPChannelMOSFET

Lowfrequencypoweramplifier Complementarypairwith2SK1056,2SK1057and2SK1058 •Goodfrequencycharacteristic •Highspeedswitching •Wideareaofsafeoperation •Enhancement-mode •Goodcomplementarycharacteristics •Equippedwithgateprotectiondiodes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconP-ChannelMOSFET

Lowfrequencypoweramplifier Complementarypairwith2SK1056,2SK1057and2SK1058 •Goodfrequencycharacteristic •Highspeedswitching •Wideareaofsafeoperation •Enhancement-mode •Goodcomplementarycharacteristics •Equippedwithgateprotectiondiodes

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconPChannelMOSFET

Lowfrequencypoweramplifier Complementarypairwith2SK1056,2SK1057and2SK1058 •Goodfrequencycharacteristic •Highspeedswitching •Wideareaofsafeoperation •Enhancement-mode •Goodcomplementarycharacteristics •Equippedwithgateprotectiondiodes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconP-ChannelMOSFET

Lowfrequencypoweramplifier Complementarypairwith2SK1056,2SK1057and2SK1058 •Goodfrequencycharacteristic •Highspeedswitching •Wideareaofsafeoperation •Enhancement-mode •Goodcomplementarycharacteristics •Equippedwithgateprotectiondiodes

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconPChannelMOSFET

Lowfrequencypoweramplifier Complementarypairwith2SK1056,2SK1057and2SK1058 •Goodfrequencycharacteristic •Highspeedswitching •Wideareaofsafeoperation •Enhancement-mode •Goodcomplementarycharacteristics •Equippedwithgateprotectiondiodes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-7A@TC=25℃ ·DrainSourceVoltage-VDSS=-160V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPChannelMOSFET

Lowfrequencypoweramplifier Complementarypairwith2SK1056,2SK1057and2SK1058 •Goodfrequencycharacteristic •Highspeedswitching •Wideareaofsafeoperation •Enhancement-mode •Goodcomplementarycharacteristics •Equippedwithgateprotectiondiodes

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

ForGeneralSwitching

SiliconP-ChannelJunctionFET Forgeneralswitching Complementaryto2SK1103 ■Features ●LowON-resistance ●Low-noisecharacteristics

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconP-ChannelJunctionFET

SiliconP-ChannelJunctionFET Forgeneralswitching Complementaryto2SK1103 ■Features ●LowON-resistance ●Low-noisecharacteristics

PanasonicPanasonic Corporation

松下松下电器

Panasonic

ForSwitching

SiliconP-ChannelJunctionFET Forswitching Complementaryto2SK1104 ■Features ●LowON-resistance ●Low-noisecharacteristics

PanasonicPanasonic Corporation

松下松下电器

Panasonic

SiliconP-ChannelJunctionFET

SiliconP-ChannelJunctionFET Forswitching Complementaryto2SK1104 ■Features ●LowON-resistance ●Low-noisecharacteristics

PanasonicPanasonic Corporation

松下松下电器

Panasonic

P-CHANNELMOSFETFORSWITCHING

P-CHANNELMOSFETFORSWITCHING The2SJ165,P-channelverticaltypeMOSFET,isaswitchingdevicewhichcanbedrivendirectlybytheoutputofICxhavinga5Vpowersource. AstheMOSFEThaslowon-stateresistanceandexcellentswitchingcharacteristics,itissuitablefordrivenactuators

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

MOSFIELDEFFECTTRANSISTOF

P-CHANNELMOSFET FORSWITCHING

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MOSFIELDEFFECTTRANSISTOR

P-CHANNELMOSFET FORHIGHSPEEDSWITCHING

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

P-CHANNELMOSFETFORHIGHSPEEDSWITCHING

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

MOSFiedEffectTransistor

Features •DirectlydrivenbyIcshavinga5Vpoersupply. •Notnecessarytoconsiderdrevingcurrentbecauseofitshighinputimpedance. •Possibletoreducethenumberofpartsbyomittingthebiasresistor.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

PCHANNELMOSTYPE(HIGHSPEEDSWITCHING,ANALOGSWITCH,INTERFACEAPPLICATIONS)

HighSpeedSwitchingApplications AnalogSwitchApplications InterfaceApplications •Excellentswitchingtime:ton=14ns(typ.) •Highforwardtransferadmittance:|Yfs|=100mS(min) •Lowonresistance:RDS(ON)=1.3Ω(typ.) •Enhancement-mode •Complementaryto2SK1

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

PCHANNELMOSTYPE(HIGHSPEEDSWITCHING,ANALOGSWITCH,INTERFACEAPPLICATIONS)

HighSpeedSwitchingApplications AnalogSwitchApplications InterfaceApplications •Excellentswitchingtime:ton=14ns(typ.) •Highforwardtransferadmittance:|Yfs|=100mS(min)@ID=−50mA •Lowonresistance:RDS(ON)=1.3Ω(typ.)@ID=−50mA •Enhancement-mo

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconPChannelMOSFET

文件:89.92 Kbytes Page:8 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

封装/外壳:TO-220-3 整包 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:MOSFET P-CH 160V 7A TO3P 分立半导体产品 晶体管 - FET,MOSFET - 单个

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

P-ChannelMOSFET

文件:1.34012 Mbytes Page:4 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

P-ChannelMOSFET

文件:1.35024 Mbytes Page:4 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

P-Channel60V(D-S)MOSFET

文件:957.97 Kbytes Page:7 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

P-Channel60V(D-S)MOSFET

文件:981.46 Kbytes Page:7 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

SiliconPChannelMOSType

文件:516.13 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconPChannelMOSType

文件:516.13 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconPChannelMOSType

文件:557.52 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

P-Channel60V(D-S)MOSFET

文件:1.69919 Mbytes Page:7 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

SiliconPChannelMOSType

文件:557.52 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SJ16产品属性

  • 类型

    描述

  • 型号

    2SJ16

  • 制造商

    Renesas Electronics Corporation

  • 功能描述

    7A, 120V, TO-3P - Rail/Tube

更新时间:2024-6-3 18:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS(瑞萨)/IDT
23+
6000
诚信服务,绝对原装原盘
NEC
2339+
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
NEC
1822+
TO-92S
6852
只做原装正品假一赔十为客户做到零风险!!
NEC
2023+
SOT-23
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
SOT-23
23+
NA
15659
振宏微专业只做正品,假一罚百!
NEC
23+
SOT-23
31000
全新原装现货
NEC
2048+
TO-92S
9852
只做原装正品现货!或订货假一赔十!
RENESAS/瑞萨
23+
NA/
9250
原装现货,当天可交货,原型号开票
Renesas
20+
MMSC-59
36800
原装优势主营型号-可开原型号增税票
NEC
2023+
SOT-23
50000
原装现货

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