Silicon P-Channel MOS FET

Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes

Silicon P Channel MOS FET

Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -7A@ TC=25℃ ·Drain Source Voltage -VDSS= -160V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1Ω(Max)@VGS = -10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFETs

Silicon P Channel MOS FET

Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes

封装/外壳：TO-220-3 整包 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET P-CH 160V 7A TO3P 分立半导体产品 晶体管 - FET，MOSFET - 单个