| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ160 | Silicon P-Channel MOS FET Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SJ160 | Silicon P Channel MOS FET Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes | RENESAS 瑞萨 | | |
2SJ160 | Power MOSFETs | RENESAS 瑞萨 | | |
Silicon P Channel MOS FET Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：89.92 Kbytes Page：8 Pages | RENESAS 瑞萨 | |
2SJ160产品属性
- 类型
描述
- Vgs (off) (V) max.：
-1.45
- Nch/Pch：
Pch
- VGSS (V)：
15
- Number of Channels：
Single
- Pch (W)：
100
- Configuration [Device]：
Built-In SBD
- Application：
Automotive Use
- VDSS (V) max.：
-120
- Mounting Type：
Through Hole
- ID (A)：
-7
- Package Type：
TO-3P
- Ciss (pF) typ.：
900
- Production Status：
Non-promotion
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
S/HIT |
2023+ |
TOP-3A |
50000 |
原装现货 |
|||
24+ |
2000 |
||||||
日立 |
22+ |
TO-220 |
6000 |
十年配单,只做原装 |
|||
HITACHI/日立 |
23+ |
TO-3P |
50000 |
全新原装正品现货,支持订货 |
|||
HITACHI |
0812+ |
TO-3P |
86 |
全新 发货1-2天 |
2SJ160规格书下载地址
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2019-10-30
DdatasheetPDF页码索引
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