2SD161晶体管资料

  • 2SD161别名:2SD161三极管、2SD161晶体管、2SD161晶体三极管

  • 2SD161生产厂家:日本富士通公司

  • 2SD161制作材料:Si-NPN

  • 2SD161性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2SD161封装形式:直插封装

  • 2SD161极限工作电压:120V

  • 2SD161最大电流允许值:10A

  • 2SD161最大工作频率:<1MHZ或未知

  • 2SD161引脚数:2

  • 2SD161最大耗散功率:100W

  • 2SD161放大倍数

  • 2SD161图片代号:E-44

  • 2SD161vtest:120

  • 2SD161htest:999900

  • 2SD161atest:10

  • 2SD161wtest:100

  • 2SD161代换 2SD161用什么型号代替:BDX11,BDY19,BDY74,2N3442,2N3773,2SD551,2SD732,2SD733,3DD68E,

型号 功能描述 生产厂家&企业 LOGO 操作

Silicon NPN Epitaxial

Application Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110

HitachiHitachi Semiconductor

日立日立公司

Silicon NPN triple diffusion planar type Darlington(For power amplification)

Silicon NPN triple diffusion planar type darlington For power amplification ■ Features • High forward current transfer ratio hFE • High collector-base voltage (Emitter open) VCBO • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electr

Panasonic

松下

Silicon NPN Triple Diffusion Planar Type Darlington

Features ● High forward current transfer ratio hFE ● High collector-base voltage (Emitter open) VCBO

KEXIN

科信电子

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 500(Min)@ IC= 2A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 500(Min)@ IC= 2A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 500(Min)@ IC= 2A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 500(Min)@ IC= 2A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

ISC

无锡固电

SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

RENESAS

瑞萨

NPN-Silicon General use Transistors

NPN-Silicon General use Transistors 1W 、 1.5A、 25V Applications: Can be used for switching and amplifying in various electrical and electronic circuit.

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

NPN Silicon Epitaxial Transistor

■ Features ● High DC Current Gain:hFE 135 to 600. ● Low VCE(sat) ● Complementary to 2SB1114

KEXIN

科信电子

NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The 2SD1614 is designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits.

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD

DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package • Low VCE (sat) VCE(sat) = 0.15 V • Complement to 2SB1115, 2SD1115A

NEC

瑞萨

NPN Silicon Epitaxial Transistor

Features ● World Standard Miniature Package. ● Low VCE(sat) VCE(sat) = 0.15 V

KEXIN

科信电子

Old Company Name in Catalogs and Other Documents

DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES • Low VCE (sat) VCE(sat) = 0.15 V • Complement to 2SB1115, 1115A

RENESAS

瑞萨

Old Company Name in Catalogs and Other Documents

DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES • Low VCE (sat) VCE(sat) = 0.15 V • Complement to 2SB1115, 1115A

RENESAS

瑞萨

World Standard Miniature Package

Features World Standard Miniature Package. Low VCE(sat) VCE(sat) = 0.15 V

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

Old Company Name in Catalogs and Other Documents

DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES • Low VCE (sat) VCE(sat) = 0.15 V • Complement to 2SB1115, 1115A

RENESAS

瑞萨

NPN Silicon Epitaxial Transistor

Features ● World Standard Miniature Package. ● Low VCE(sat) VCE(sat) = 0.15 V

KEXIN

科信电子

NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD

DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package • Low VCE (sat) VCE(sat) = 0.15 V • Complement to 2SB1115, 2SD1115A

NEC

瑞萨

NPN EPITAXIAL SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Audio frequency power amplifier * Medium speed switching

UTC

友顺

NPN SILICON TRANSISTORS

DESCRIPTION The 2SD1616/2SD1616A are designed for use in driver and output stages of AF amplifier, general purpose application.

NEC

瑞萨

NPN Transistors

NPN Transistors P/b Lead(Pb)-Free

WEITRON

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURE Power dissipation PCM: 0.75 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low VCE(sat) ● Complementary Transistor with The 2SB1116

JIANGSU

长电科技

NPN Silicon Transistor

NPN Silicon Transistor The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application. The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be manufactured i

SEMTECH_ELEC

先之科半导体

SILICON TRANSISTORS

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) • Large PT in small dimension with versatility PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A • Complementary transistor with t

RENESAS

瑞萨

TO-92 Plastic-Encapsulate Transistors

FEATURES Low VCE(sat) Complementary Transistor with The 2SB1116

DGNJDZ

南晶电子

SILICON TRANSISTORS

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) • Large PT in small dimension with versatility PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A • Complementary transistor with t

RENESAS

瑞萨

SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Low collector saturation voltage High break down voltage High total power dissipation

DGNJDZ

南晶电子

TO-92 Plastic-Encapsulate Transistors

FEA TURE Power dissipation

DGNJDZ

南晶电子

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES ● Low collector saturation voltage ● High break down voltage ● High total power dissipation

JIANGSU

长电科技

TRANSISTOR (NPN)

FEATURE Power dissipation PCM: 0.75 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 120 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURE Power dissipation

KOOCHIN

NPN SILICON TRANSISTOR

DESCRIPTION 2SD1616A is NPN silicon planar transistor designed for use in driver and output stages of AF amplifier, general purpose application.

MICRO-ELECTRONICS

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for audio frequency power amplifier and medium-speed switching applications.

DCCOM

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURE Power dissipation

DAYA

大亚电器集团

NPN Plastic-Encapsulated Transistor

FEATURES • Power dissipation

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

NPN Transistors

NPN Transistors P/b Lead(Pb)-Free

WEITRON

NPN SILICON TRANSISTORS

DESCRIPTION The 2SD1616/2SD1616A are designed for use in driver and output stages of AF amplifier, general purpose application.

NEC

瑞萨

NPN EPITAXIAL SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Audio frequency power amplifier * Medium speed switching

UTC

友顺

TO-92 Plastic-Encapsulate Transistors

FEA TURE Power dissipation

DGNJDZ

南晶电子

TO-92 Plastic-Encapsulate Transistors

FEA TURE Power dissipation

DGNJDZ

南晶电子

TO-92 Plastic-Encapsulate Transistors

FEATURES Low VCE(sat) Complementary Transistor with The 2SB1116

DGNJDZ

南晶电子

Low-Voltage, High-Current Amp, Muting Applications

Features · Low collector-to-emitter saturation voltage. · Very small size making it easy to provide high density, small-sized hybrid IC’s.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

Low-Voltage High-Current Amplifier, Muting Applications

Features · Low collector-to-emitter saturation voltage. · Very small size making it easy to provide high density, small-sized hybrid IC’s.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

PNP Epitaxial Planar Silicon Transistors

■ Features ● Low collector-to-emitter saturation voltage. ● Very small size making it easy to provide highdensity, small-sized hybrid IC’s. ● Complementary to 2SB1118

KEXIN

科信电子

Bipolar Transistor 15V, 0.7A, Low VCE(sat), NPN Single PCP

Features • Low collector-to-emitter saturation voltage • Very small size making it easy to provide highdensity, small-sized hybrid IC’s

ONSEMI

安森美半导体

Bipolar Transistor 15V, 0.7A, Low VCE(sat), NPN Single PCP

Features • Low collector-to-emitter saturation voltage • Very small size making it easy to provide highdensity, small-sized hybrid IC’s

ONSEMI

安森美半导体

Bipolar Transistor 15V, 0.7A, Low VCE(sat), NPN Single PCP

Features • Low collector-to-emitter saturation voltage • Very small size making it easy to provide highdensity, small-sized hybrid IC’s

ONSEMI

安森美半导体

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 25V (Min) • Complement to Type 2SB1119 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for LF Amp Electronic Governor applications.

ISC

无锡固电

PNP Silicon Medium Power Transistor

FEATURES Power dissipation PCM : 500mW˄ Tamb=25°C Collector current ICM : -1 A Collector-base voltage VB(BR)CBO : -25 V Operating and storage junction temperature range TJ,Tstg: -55ć to +150ć

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

NPN Epitaxial Planar Silicon Transistor

Features Very small size making it easy to provide highdensity, small-sized hybrid IC’ s.

KEXIN

科信电子

LF Amp,Electronic Governor Applications

LF Amplifier, Electronic Governor Applications Features · Very small size making it easy to provide high density, small-sized hybrid IC’s.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

NPN Transistors

文件:754.35 Kbytes Page:3 Pages

KEXIN

科信电子

NPN Transistors

文件:754.35 Kbytes Page:3 Pages

KEXIN

科信电子

NPN Transistors

文件:754.35 Kbytes Page:3 Pages

KEXIN

科信电子

NPN Transistors

文件:754.35 Kbytes Page:3 Pages

KEXIN

科信电子

World Standard Miniature Package

文件:560.82 Kbytes Page:1 Pages

LEIDITECH

雷卯电子

NPN Transistors

文件:1.20978 Mbytes Page:3 Pages

KEXIN

科信电子

NPN Transistors

文件:1.25752 Mbytes Page:3 Pages

KEXIN

科信电子

2SD161产品属性

  • 类型

    描述

  • 型号

    2SD161

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY TRANSISTOR TO-3 120V 10A 100W BEC

更新时间:2025-8-7 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
24+
NA/
6250
原装现货,当天可交货,原型号开票
NEC
25+
SOT-89
54648
百分百原装现货 实单必成
NEC
25+
原装
32000
NEC全新特价2SD1614-T1即刻询购立享优惠#长期有货
NEC
1942+
SOT-89
9852
只做原装正品现货或订货!假一赔十!
NEC
00+
SOT-89
52000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
原装NEC
24+
SOT-89
9000
只做原装正品现货 欢迎来电查询15919825718
CJ
21+
SOT89
52520
原装现货假一赔十
NEC
24+
4231
公司原厂原装现货假一罚十!特价出售!强势库存!
CJ/长电
2223+
SOT-89
26800
只做原装正品假一赔十为客户做到零风险
RENESAS
23+
SOT-89
63000
原装正品现货

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