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2SD161晶体管资料
2SD161别名:2SD161三极管、2SD161晶体管、2SD161晶体三极管
2SD161生产厂家:日本富士通公司
2SD161制作材料:Si-NPN
2SD161性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L
2SD161封装形式:直插封装
2SD161极限工作电压:120V
2SD161最大电流允许值:10A
2SD161最大工作频率:<1MHZ或未知
2SD161引脚数:2
2SD161最大耗散功率:100W
2SD161放大倍数:
2SD161图片代号:E-44
2SD161vtest:120
2SD161htest:999900
- 2SD161atest:10
2SD161wtest:100
2SD161代换 2SD161用什么型号代替:BDX11,BDY19,BDY74,2N3442,2N3773,2SD551,2SD732,2SD733,3DD68E,
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
Silicon NPN Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110 | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon NPN triple diffusion planar type Darlington(For power amplification) Silicon NPN triple diffusion planar type darlington For power amplification ■ Features • High forward current transfer ratio hFE • High collector-base voltage (Emitter open) VCBO • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electr | Panasonic 松下 | |||
Silicon NPN Triple Diffusion Planar Type Darlington Features ● High forward current transfer ratio hFE ● High collector-base voltage (Emitter open) VCBO | KEXIN 科信电子 | |||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 500(Min)@ IC= 2A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | |||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 500(Min)@ IC= 2A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | |||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 500(Min)@ IC= 2A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | |||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 500(Min)@ IC= 2A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter | ISC 无锡固电 | |||
SILICON TRANSISTOR NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD | RENESAS 瑞萨 | |||
NPN-Silicon General use Transistors NPN-Silicon General use Transistors 1W 、 1.5A、 25V Applications: Can be used for switching and amplifying in various electrical and electronic circuit. | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
NPN Silicon Epitaxial Transistor ■ Features ● High DC Current Gain:hFE 135 to 600. ● Low VCE(sat) ● Complementary to 2SB1114 | KEXIN 科信电子 | |||
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION The 2SD1614 is designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. | NEC 瑞萨 | |||
NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package • Low VCE (sat) VCE(sat) = 0.15 V • Complement to 2SB1115, 2SD1115A | NEC 瑞萨 | |||
NPN Silicon Epitaxial Transistor Features ● World Standard Miniature Package. ● Low VCE(sat) VCE(sat) = 0.15 V | KEXIN 科信电子 | |||
Old Company Name in Catalogs and Other Documents DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES • Low VCE (sat) VCE(sat) = 0.15 V • Complement to 2SB1115, 1115A | RENESAS 瑞萨 | |||
Old Company Name in Catalogs and Other Documents DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES • Low VCE (sat) VCE(sat) = 0.15 V • Complement to 2SB1115, 1115A | RENESAS 瑞萨 | |||
World Standard Miniature Package Features World Standard Miniature Package. Low VCE(sat) VCE(sat) = 0.15 V | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
Old Company Name in Catalogs and Other Documents DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES • Low VCE (sat) VCE(sat) = 0.15 V • Complement to 2SB1115, 1115A | RENESAS 瑞萨 | |||
NPN Silicon Epitaxial Transistor Features ● World Standard Miniature Package. ● Low VCE(sat) VCE(sat) = 0.15 V | KEXIN 科信电子 | |||
NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package • Low VCE (sat) VCE(sat) = 0.15 V • Complement to 2SB1115, 2SD1115A | NEC 瑞萨 | |||
NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Audio frequency power amplifier * Medium speed switching | UTC 友顺 | |||
NPN SILICON TRANSISTORS DESCRIPTION The 2SD1616/2SD1616A are designed for use in driver and output stages of AF amplifier, general purpose application. | NEC 瑞萨 | |||
NPN Transistors NPN Transistors P/b Lead(Pb)-Free | WEITRON | |||
TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURE Power dissipation PCM: 0.75 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | |||
TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● Low VCE(sat) ● Complementary Transistor with The 2SB1116 | JIANGSU 长电科技 | |||
NPN Silicon Transistor NPN Silicon Transistor The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application. The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be manufactured i | SEMTECH_ELEC 先之科半导体 | |||
SILICON TRANSISTORS NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) • Large PT in small dimension with versatility PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A • Complementary transistor with t | RENESAS 瑞萨 | |||
TO-92 Plastic-Encapsulate Transistors FEATURES Low VCE(sat) Complementary Transistor with The 2SB1116 | DGNJDZ 南晶电子 | |||
SILICON TRANSISTORS NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) • Large PT in small dimension with versatility PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A • Complementary transistor with t | RENESAS 瑞萨 | |||
SOT-89-3L Plastic-Encapsulate Transistors FEATURES Low collector saturation voltage High break down voltage High total power dissipation | DGNJDZ 南晶电子 | |||
TO-92 Plastic-Encapsulate Transistors FEA TURE Power dissipation | DGNJDZ 南晶电子 | |||
SOT-89-3L Plastic-Encapsulate Transistors TRANSISTOR(NPN) FEATURES ● Low collector saturation voltage ● High break down voltage ● High total power dissipation | JIANGSU 长电科技 | |||
TRANSISTOR (NPN) FEATURE Power dissipation PCM: 0.75 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 120 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | |||
TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURE Power dissipation | KOOCHIN | |||
NPN SILICON TRANSISTOR DESCRIPTION 2SD1616A is NPN silicon planar transistor designed for use in driver and output stages of AF amplifier, general purpose application. | MICRO-ELECTRONICS | |||
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency power amplifier and medium-speed switching applications. | DCCOM | |||
TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURE Power dissipation | DAYA 大亚电器集团 | |||
NPN Plastic-Encapsulated Transistor FEATURES • Power dissipation | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
NPN Transistors NPN Transistors P/b Lead(Pb)-Free | WEITRON | |||
NPN SILICON TRANSISTORS DESCRIPTION The 2SD1616/2SD1616A are designed for use in driver and output stages of AF amplifier, general purpose application. | NEC 瑞萨 | |||
NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Audio frequency power amplifier * Medium speed switching | UTC 友顺 | |||
TO-92 Plastic-Encapsulate Transistors FEA TURE Power dissipation | DGNJDZ 南晶电子 | |||
TO-92 Plastic-Encapsulate Transistors FEA TURE Power dissipation | DGNJDZ 南晶电子 | |||
TO-92 Plastic-Encapsulate Transistors FEATURES Low VCE(sat) Complementary Transistor with The 2SB1116 | DGNJDZ 南晶电子 | |||
Low-Voltage, High-Current Amp, Muting Applications Features · Low collector-to-emitter saturation voltage. · Very small size making it easy to provide high density, small-sized hybrid IC’s. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
Low-Voltage High-Current Amplifier, Muting Applications Features · Low collector-to-emitter saturation voltage. · Very small size making it easy to provide high density, small-sized hybrid IC’s. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
PNP Epitaxial Planar Silicon Transistors ■ Features ● Low collector-to-emitter saturation voltage. ● Very small size making it easy to provide highdensity, small-sized hybrid IC’s. ● Complementary to 2SB1118 | KEXIN 科信电子 | |||
Bipolar Transistor 15V, 0.7A, Low VCE(sat), NPN Single PCP Features • Low collector-to-emitter saturation voltage • Very small size making it easy to provide highdensity, small-sized hybrid IC’s | ONSEMI 安森美半导体 | |||
Bipolar Transistor 15V, 0.7A, Low VCE(sat), NPN Single PCP Features • Low collector-to-emitter saturation voltage • Very small size making it easy to provide highdensity, small-sized hybrid IC’s | ONSEMI 安森美半导体 | |||
Bipolar Transistor 15V, 0.7A, Low VCE(sat), NPN Single PCP Features • Low collector-to-emitter saturation voltage • Very small size making it easy to provide highdensity, small-sized hybrid IC’s | ONSEMI 安森美半导体 | |||
isc Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 25V (Min) • Complement to Type 2SB1119 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for LF Amp Electronic Governor applications. | ISC 无锡固电 | |||
PNP Silicon Medium Power Transistor FEATURES Power dissipation PCM : 500mW˄ Tamb=25°C Collector current ICM : -1 A Collector-base voltage VB(BR)CBO : -25 V Operating and storage junction temperature range TJ,Tstg: -55ć to +150ć | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
NPN Epitaxial Planar Silicon Transistor Features Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. | KEXIN 科信电子 | |||
LF Amp,Electronic Governor Applications LF Amplifier, Electronic Governor Applications Features · Very small size making it easy to provide high density, small-sized hybrid IC’s. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
NPN Transistors 文件:754.35 Kbytes Page:3 Pages | KEXIN 科信电子 | |||
NPN Transistors 文件:754.35 Kbytes Page:3 Pages | KEXIN 科信电子 | |||
NPN Transistors 文件:754.35 Kbytes Page:3 Pages | KEXIN 科信电子 | |||
NPN Transistors 文件:754.35 Kbytes Page:3 Pages | KEXIN 科信电子 | |||
World Standard Miniature Package 文件:560.82 Kbytes Page:1 Pages | LEIDITECH 雷卯电子 | |||
NPN Transistors 文件:1.20978 Mbytes Page:3 Pages | KEXIN 科信电子 | |||
NPN Transistors 文件:1.25752 Mbytes Page:3 Pages | KEXIN 科信电子 |
2SD161产品属性
- 类型
描述
- 型号
2SD161
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY TRANSISTOR TO-3 120V 10A 100W BEC
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
6250 |
原装现货,当天可交货,原型号开票 |
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NEC |
25+ |
SOT-89 |
54648 |
百分百原装现货 实单必成 |
|||
NEC |
25+ |
原装 |
32000 |
NEC全新特价2SD1614-T1即刻询购立享优惠#长期有货 |
|||
NEC |
1942+ |
SOT-89 |
9852 |
只做原装正品现货或订货!假一赔十! |
|||
NEC |
00+ |
SOT-89 |
52000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
原装NEC |
24+ |
SOT-89 |
9000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
CJ |
21+ |
SOT89 |
52520 |
原装现货假一赔十 |
|||
NEC |
24+ |
4231 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
CJ/长电 |
2223+ |
SOT-89 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
RENESAS |
23+ |
SOT-89 |
63000 |
原装正品现货 |
2SD161规格书下载地址
2SD161参数引脚图相关
- 500t
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2SD1633
- 2SD1632
- 2SD1631
- 2SD1630
- 2SD1628
- 2SD1627
- 2SD1626
- 2SD1625
- 2SD1624
- 2SD1623
- 2SD1622
- 2SD1621
- 2SD1620
- 2SD162
- 2SD1619
- 2SD1618
- 2SD1617
- 2SD1616A
- 2SD1616
- 2SD1615A
- 2SD1615
- 2SD1614
- 2SD1613
- 2SD1612
- 2SD1611
- 2SD1610
- 2SD1609
- 2SD1608
- 2SD1607
- 2SD1606
- 2SD1605
- 2SD1604
- 2SD1603
- 2SD1602
- 2SD1601
- 2SD1600
- 2SD160
- 2SD16
- 2SD1599
- 2SD1598
- 2SD1597
- 2SD1595
- 2SD1594
- 2SD1593
- 2SD1592
- 2SD1591
- 2SD1590
- 2SD1589
- 2SD1588
2SD161数据表相关新闻
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2023-2-272SD1624G-SOT89R-T-TG_UTC代理商
2SD1624G-SOT89R-T-TG_UTC代理商
2023-2-142SD1616AG-TO92B-Y-TG_UTC代理商
2SD1616AG-TO92B-Y-TG_UTC代理商
2023-2-82SC5569G-SOT89R-TG
2SC5569G-SOT89R-TG
2023-1-302SC5826中文资料库
2SC5826中文资料库
2019-2-152SC945_2SC945晶体管_2SC945中文资料_2SC945代换
2SC945、2SC945晶体管、2SC945中文资料、2SC945代换、c945可以用什么代替、c945用什么型号代替、2SC945配对管、2SC945放大倍数、2SC945品牌、C945、C945三极管、C945晶体管、C945晶体三极管、2SC945三极管、2SC945晶体管、2SC945晶体三极管
2018-12-19
DdatasheetPDF页码索引
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