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2SC55晶体管资料

2SC55别名：2SC55三极管、2SC55晶体管、2SC55晶体三极管
2SC55生产厂家：日本富士通公司
2SC55制作材料：Si-NPN
2SC55性质：射频/高频放大（HF）_TR
2SC55封装形式：直插封装
2SC55极限工作电压：40V
2SC55最大电流允许值：0.1A
2SC55最大工作频率：350MHZ
2SC55引脚数：3
2SC55最大耗散功率：0.36W
2SC55放大倍数：
2SC55图片代号：D-8
2SC55vtest：40
2SC55htest：350000000
2SC55atest：0.1
2SC55wtest：0.36

2SC55代换 2SC55用什么型号代替：BFW16,BFW17,BFX55,BFX59,BFY74,BFY75,BSW63,BSW64,BSW84,BSW85,2N915,3DG120C,

2SC55价格

参考价格：￥0.8004

型号：2SC5501A-4-TR-E 品牌：ON 备注：这里有2SC55多少钱，2025年最近7天走势，今日出价，今日竞价，2SC55批发/采购报价，2SC55行情走势销售排行榜，2SC55报价。

型号	功能描述	生产厂家企业	LOGO
2SC5501	VHF to UHF Low-Noise Wide-Band Amplifier Applications VHF to UHF Low-Noise Wide-Band Amplifier Applications Features · Low noise : NF=1.0dB typ (f=1GHz). · High gain : \|S21e\|2=13dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ. · Large allowable collector dissipation : PC=500mW max.	SANYO 三洋	SANYO
2SC5501A	RF Transistor 10V, 70mA, fT=7GHz, NPN Single MCP4 Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=13dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ • Large allowable collector dissipation : PC=500mW max	ONSEMI 安森美半导体	ONSEMI
2SC5501A	VHF to UHF Wide-Band Low-Noise Amplifier Applications VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=13dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ • Large allowable collector dissipation : PC=500mW max	SANYO 三洋	SANYO
2SC5501A-4-TR-E	RF Transistor 10V, 70mA, fT=7GHz, NPN Single MCP4 Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=13dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ • Large allowable collector dissipation : PC=500mW max	ONSEMI 安森美半导体	ONSEMI
2SC5502	High-Frequency Low-Noise Amplifier Applications High-Frequency Low-Noise Amplifier Applications Features · Low noise : NF=1.1dB typ (f=1GHz). · High gain : \|S21e\|2 =12dB typ (f=1GHz). · High cutoff frequency : fT=8GHz typ.	SANYO 三洋	SANYO
2SC5503	VHF to UHF Low-Noise Wide-Band Amplifier Applications VHF to UHF Low-Noise Wide-Band Amplifier Applications Features • Low noise : NF=1.2dB typ (f=1GHz). • High gain : \|S21e\|2=15dB typ (f=1GHz). • High cutoff frequency : fT=9.0GHz typ.	SANYO 三洋	SANYO
2SC5504	UHF to S Band Low-Noise Amplifier Applications UHF to S Band Low-Noise Amplifier Applications Features • Low noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz). • High gain : \|S21e\|2=11dB typ (f=1GHz). • High cutoff frequency : fT=11GHz typ. • Low voltage, low current operation. (VCE=1V, IC=1mA) : fT=7GHz typ. : \|S21e\|2=6dB typ (f	SANYO 三洋	SANYO
2SC5505	Silicon NPN epitaxial planar type Silicon NPN epitaxial planar type For power amplification ■ Features • High-speed switching • TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed	Panasonic 松下	Panasonic
2SC5506	Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed. · High breakdown voltage (VCBO=1600V). · High reliability (Adoption of HVP process). · Adoption of MBIT process.	SANYO 三洋	SANYO
2SC5507	NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA • Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA • fT = 25 GHz technology • Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)	NEC 瑞萨	NEC
2SC5507	NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 2 mA, f = 2 GHz • Maximum stable power gain: MSG	RENESAS 瑞萨	RENESAS
2SC5507-T2	NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 2 mA, f = 2 GHz • Maximum stable power gain: MSG	RENESAS 瑞萨	RENESAS
2SC5507-T2	NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA • Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA • fT = 25 GHz technology • Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)	NEC 瑞萨	NEC
2SC5508	NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB, Ga= 16 dB TYP. @f = 2 GHz, VCE= 2 V, IC= 5 mA • Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, V	NEC 瑞萨	NEC
2SC5508	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19	RENESAS 瑞萨	RENESAS
2SC5508-A	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19	RENESAS 瑞萨	RENESAS
2SC5508-T2	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19	RENESAS 瑞萨	RENESAS
2SC5508-T2	NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB, Ga= 16 dB TYP. @f = 2 GHz, VCE= 2 V, IC= 5 mA • Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, V	NEC 瑞萨	NEC
2SC5508-T2-A	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19	RENESAS 瑞萨	RENESAS
2SC5508-T2B	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19	RENESAS 瑞萨	RENESAS
2SC5508-T2B-A	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19	RENESAS 瑞萨	RENESAS
2SC5509	NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FORMEDIUM OUTPUT POWER LOW NOISE HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga= 12 dB TYP. @ VCE= 2 V, IC= 10 mA, f = 2 GHz • Maximum available power gain: MAG = 14 dB	NEC 瑞萨	NEC
2SC5509	NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz • Maximum available power gain: M	CEL	CEL
2SC5509	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga= 12 dB TYP. @ VCE= 2 V, IC= 10 mA, f = 2 GHz • Maximum available	RENESAS 瑞萨	RENESAS
2SC5509-A	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga= 12 dB TYP. @ VCE= 2 V, IC= 10 mA, f = 2 GHz • Maximum available	RENESAS 瑞萨	RENESAS
2SC5509-T2	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga= 12 dB TYP. @ VCE= 2 V, IC= 10 mA, f = 2 GHz • Maximum available	RENESAS 瑞萨	RENESAS
2SC5509-T2	NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FORMEDIUM OUTPUT POWER LOW NOISE HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga= 12 dB TYP. @ VCE= 2 V, IC= 10 mA, f = 2 GHz • Maximum available power gain: MAG = 14 dB	NEC 瑞萨	NEC
2SC5509-T2-A	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga= 12 dB TYP. @ VCE= 2 V, IC= 10 mA, f = 2 GHz • Maximum available	RENESAS 瑞萨	RENESAS
2SC5511	For Audio Amplifier output - TV Velosity Modulation (160V, 1.5A) For Audio Amplifier output - TV Velosity Modulation (160V, 1.5A) Features 1) Electrical characteristics of DC current gain hFEis flat. 2) High breakdown voltage. (BVCEO=160V(Min.), at IC=1mA) 3) High fT. (Typ. 150MHz, at VCE=10V, IE= −0.2A, f=100MHz) 4) Wide SOA. Applicati	ROHM 罗姆	ROHM
2SC5513	Silicon NPN triple diffusion mesa type(For horizontal deflection output) For horizontal deflection output ■ Features ● High breakdown voltage, and high reliability through the use of a glass passivation layer ● High-speed switching ● Wide area of safe operation (ASO)	Panasonic 松下	Panasonic
2SC5514	Silicon NPN triple diffusion mesa type(For horizontal deflection output) ■ Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe operation, despite an absolutely minimal chip area w	Panasonic 松下	Panasonic
2SC5514	Horizontal Deflection Transistor Series for TV ■ Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe operation, despite an absolutely minimal chip area w	Panasonic 松下	Panasonic
2SC5515	Silicon NPN triple diffusion mesa type(For horizontal deflection output) For horizontal deflection output ■ Features ● High breakdown voltage, and high reliability through the use of a glass passivation layer ● High-speed switching ● Wide area of safe operation (ASO)	Panasonic 松下	Panasonic
2SC5516	Silicon NPN triple diffusion mesa type(For horizontal deflection output) For horizontal deflection output ■ Features ● High breakdown voltage, and high reliability through the use of a glass passivation layer ● High-speed switching ● Wide area of safe operation (ASO)	Panasonic 松下	Panasonic
2SC5516	Horizontal Deflection Transistor Series for TV ■ Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe operation, despite an absolutely minimal chip area w	Panasonic 松下	Panasonic
2SC5517	Horizontal Deflection Transistor Series for TV ■ Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe operation, despite an absolutely minimal chip area w	Panasonic 松下	Panasonic
2SC5517	Silicon NPN triple diffusion mesa type(For horizontal deflection output) ■ Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe operation, despite an absolutely minimal chip area w	Panasonic 松下	Panasonic
2SC5518	Horizontal Deflection Transistor Series for TV ■ Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe operation, despite an absolutely minimal chip area w	Panasonic 松下	Panasonic
2SC5518	Silicon NPN triple diffusion mesa type(For horizontal deflection output) ■ Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe operation, despite an absolutely minimal chip area w	Panasonic 松下	Panasonic
2SC5519	Silicon NPN triple diffusion mesa type(For horizontal deflection output) ■ Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe operation, despite an absolutely minimal chip area w	Panasonic 松下	Panasonic
2SC5519	Horizontal Deflection Transistor Series for TV ■ Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe operation, despite an absolutely minimal chip area w	Panasonic 松下	Panasonic
2SC5521	Horizontal Deflection Transistor Series for TV ■ Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe operation, despite an absolutely minimal chip area w	Panasonic 松下	Panasonic
2SC5522	Horizontal Deflection Transistor Series for TV ■ Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe operation, despite an absolutely minimal chip area w	Panasonic 松下	Panasonic
2SC5523	Horizontal Deflection Transistor Series for TV ■ Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe operation, despite an absolutely minimal chip area w	Panasonic 松下	Panasonic
2SC5524	Horizontal Deflection Transistor Series for TV ■ Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe operation, despite an absolutely minimal chip area w	Panasonic 松下	Panasonic
2SC5534	UHF to S Band Low-Noise Amplifier, OSC Applications UHF to S Band Low-Noise Amplifier, OSC Applications Features • Low noise : NF=1.2dB typ (f=2GHz). • High gain : \|S21e\|2=10dB typ (f=2GHz). • High cutoff frequency : fT=13GHz typ.	SANYO 三洋	SANYO
2SC5536	VHF Low-Noise Amplifier , OSC Applications VHF Low-Noise Amplifier , OSC Applications Features • Low noise : NF=1.8dB typ (f=150MHz). • High gain : \|S21e\|2=16dB typ (f=150MHz). • Ultrasmall, slim flat-lead package. (1.4mm×0.8mm×0.6mm)	SANYO 三洋	SANYO
2SC5536A	VHF Low-Noise Amplifier, OSC Applications NPN Epitaxial Planar Silicon Transistor Features • Low-noise : NF=1.8dB typ (f=150MHz) • High gain : ⏐S21e⏐2=16dB typ (f=150MHz) • Ultrasmall, slim flat-lead package (1.4mm×0.8mm×0.6mm) • Halogen free compliance	SANYO 三洋	SANYO
2SC5536A	RF Transistor 12V, 50mA, fT=1.7GHz, NPN Single SSFP Features • Low-noise : NF=1.8dB typ (f=150MHz) • High gain : ⏐S21e⏐2=16dB typ (f=150MHz) • Ultrasmall, slim flat-lead package (1.4mm×0.8mm×0.6mm) • Halogen free compliance	ONSEMI 安森美半导体	ONSEMI
2SC5536A-TL-H	RF Transistor 12V, 50mA, fT=1.7GHz, NPN Single SSFP Features • Low-noise : NF=1.8dB typ (f=150MHz) • High gain : ⏐S21e⏐2=16dB typ (f=150MHz) • Ultrasmall, slim flat-lead package (1.4mm×0.8mm×0.6mm) • Halogen free compliance	ONSEMI 安森美半导体	ONSEMI
2SC5537	Low-Voltage, Low-Current High-frequency Amplifier Applications Low-Voltage, Low-Current High-frequency Amplifier Applications Features · Low voltage, low current operation : fT=5GHz typ. (VCE=1V, IC=1mA) : \|S21e\|2 =7dB typ (f=1GHz). : NF=2.6dB typ (f=1GHz). · Ultrasmall, slim flat-lead package. (1.4mm	SANYO 三洋	SANYO
2SC5538	VHF to UHF OSC, High-Frequency Amplifier Applications VHF to UHF OSC, High-Frequency Amplifier Applications Features · High gain : S21e2=10.5dB typ (f=1GHz). · High cutoff frequency : fT=5.2GHz typ. · Ultrasmall, slim flat-lead package. (1.4mm×0.8mm×0.6mm)	SANYO 三洋	SANYO
2SC5538A	NPN Epitaxial Planar Silicon Transistor VHF to UHF Band OSC, High-Frequency Amplifier Applications VHF to UHF Band OSC, High-Frequency Amplifier Applications Features • High gain : \|S21e\|2=10.5dB typ (f=1GHz). • High cut-off frequency : fT=5.2GHz typ. • Ultrasmall, slim flat-lead package (1.4mm✕0.8mm✕0.6mm). • Halogen free compliance.	SANYO 三洋	SANYO
2SC5539	VHF to UHF Low-Noise Wide-Band Amplifier Applications VHF to UHF Low-Noise Wide-Band Amplifier Applications Features • Low noise : NF=1.1dB typ (f=1GHz). • High gain : \|S21e\|2=12dB typ (f=1GHz). • High cutoff frequency : fT=7.5GHz typ. • Ultrasmall, slim flat-lead package. (1.4mm × 0.8mm × 0.6mm)	SANYO 三洋	SANYO
2SC5539A	NPN Epitaxial Planar Silicon Transistor NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Amplifier and OSC Applications VHF to UHF Low-Noise Amplifier and OSC Applications Features • Low noise : NF=1.1dB typ (f=1GHz). • High gain : \|S21e\|2=12dB typ (f=1GHz). • High cut-off frequency : fT=7.5GHz typ. • Ultrasmall, slim flat-lead package (1.4mm✕0.8mm✕0.6mm). • Halogen free compliance.	SANYO 三洋	SANYO
2SC554	SOT-89-3L Plastic-Encapsulate Transistors FEATURES Low Saturation Voltage High Speed Switching	DGNJDZ 南晶电子	DGNJDZ
2SC5540	UHF to S Band Low-Noise Amplifier and OSC Applications UHF to S Band Low-Noise Amplifier and OSC Applications Features · High cutoff frequency : fT=10GHz typ. · High gain : S21e2=13dB typ (f=1GHz). · Low noise : NF=1.3dB typ (f=1GHz). · Small Cob : Cob=0.4pF typ. · Ultrasmall, slim flat-lead package. (1.4mm × 0.8mm × 0.6mm)	SANYO 三洋	SANYO
2SC5541	UHF to S Band Low-Noise Amplifier Applications UHF to S Band Low-Noise Amplifier Applications Features · Low noise : NF=1.2dB typ (f=2GHz). · High gain : S21e2=10dB typ (f=2GHz). · High cutoff frequency : fT=13GHz typ. · Ultrasmall, slim flat-lead package. (1.4mm × 0.8mm × 0.6mm)	SANYO 三洋	SANYO
2SC5543	Silicon NPN Epitaxial VHF / UHF wide band amplifier Features • Super compact package; (1.4 × 0.8 × 0.59mm) • Capable low voltage operation ; (VCE = 1V)	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SC5543	Silicon NPN Epitaxial VHF / UHF wide band amplifier Features • Super compact package; (1.4 × 0.8 × 0.59mm) • Capable low voltage operation ; (VCE = 1V)	RENESAS 瑞萨	RENESAS

2SC55产品属性

类型
描述
型号
2SC55
功能描述
两极晶体管 - BJT MEDIUM OUTPUT AMPLIFIER
RoHS
否
制造商
STMicroelectronics
晶体管极性
PNP 集电极—基极电压
VCBO
集电极—发射极最大电压
VCEO
- 40 V 发射极 - 基极电压
VEBO
- 6 V
增益带宽产品fT
直流集电极/Base Gain hfe
Min
100 A
安装风格
SMD/SMT
封装/箱体
PowerFLAT 2 x 2

2SC55供应商更多...

更新时间：2025-12-25 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	2SC5508-T2-A	Renesas(瑞萨)	24+	标准封装	12048	支持大陆交货,美金交易。原装现货库存。	询价
深圳市凌旭科技有限公司	2SC5508-T2	NEC	2016+	SMD	2460	只做原装,假一罚十,公司可开17%增值税发票!	询价
上海意淼电子科技有限公司	2SC5508-T1-A	NEC	23+	SOT-343	2500	全新原装假一赔十	询价
深圳市纳艾斯科技有限公司	2SC5508	NEC	24+	SOT343	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
深圳市明嘉莱科技有限公司	2SC5508	NEC	24+	SOT343	880000	明嘉莱只做原装正品现货	询价
深圳市粤骏腾电子科技有限公司	2SC5508-T2	NEC	24+	SOT343	2460	全新原装数量均有多电话咨询	询价
深圳市昌和盛利电子有限公司	2SC5508	NEC	NEW	SOT343	9896	代理全系列销售,全新原装正品,价格优势,长期供应,量大可订	询价
深圳市卓越微芯电子有限公司	2SC5508-T2	NEC	25+	SOT-343	1428	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市拓亿芯电子有限公司	2SC5508-T2	NEC	25+	SOT-343	30000	代理全新原装现货,价格优势	询价
中天科工半导体（深圳）有限公司	2SC5508-T2B-A	RENESAS/瑞萨	25+	SOT343	12514	RENESAS/瑞萨原装特价2SC5508-T2B-A即刻询购立享优惠#长期有货	询价

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2SC55芯片相关品牌

2SC55规格书下载地址

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2SC5569G-SOT89R-TG

2SC5353BL-TO126CK-TG

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2SC5299

2SC5826中文资料库

2SC945_2SC945晶体管_2SC945中文资料_2SC945代换

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