2SC554晶体管资料

  • 2SC554别名:2SC554三极管、2SC554晶体管、2SC554晶体三极管

  • 2SC554生产厂家:日本东芝公司

  • 2SC554制作材料:Si-NPN

  • 2SC554性质:超高频/特高频 (UHF)_宽频带放大 (A)_TR_输出

  • 2SC554封装形式:直插封装

  • 2SC554极限工作电压:36V

  • 2SC554最大电流允许值:0.5A

  • 2SC554最大工作频率:400MHZ

  • 2SC554引脚数:3

  • 2SC554最大耗散功率

  • 2SC554放大倍数

  • 2SC554图片代号:C-40

  • 2SC554vtest:36

  • 2SC554htest:400000000

  • 2SC554atest:0.5

  • 2SC554wtest:0

  • 2SC554代换 2SC554用什么型号代替:BFR97,BFR98,BFS23,BFX33,BLX65,3DA106B,

型号 功能描述 生产厂家&企业 LOGO 操作
2SC554

SOT-89-3LPlastic-EncapsulateTransistors

FEATURES LowSaturationVoltage HighSpeedSwitching

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SC554

NPNPlasticEncapsulatedTransistor

文件:224.82 Kbytes Page:2 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
2SC554

SOT-89-3LPlastic-EncapsulateTransistors

文件:1.61858 Mbytes Page:4 Pages

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

UHFtoSBandLow-NoiseAmplifierandOSCApplications

UHFtoSBandLow-NoiseAmplifierandOSCApplications Features ·Highcutofffrequency:fT=10GHztyp. ·Highgain:S21e2=13dBtyp(f=1GHz). ·Lownoise:NF=1.3dBtyp(f=1GHz). ·SmallCob:Cob=0.4pFtyp. ·Ultrasmall,slimflat-leadpackage. (1.4mm×0.8mm×0.6mm)

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

UHFtoSBandLow-NoiseAmplifierApplications

UHFtoSBandLow-NoiseAmplifierApplications Features ·Lownoise:NF=1.2dBtyp(f=2GHz). ·Highgain:S21e2=10dBtyp(f=2GHz). ·Highcutofffrequency:fT=13GHztyp. ·Ultrasmall,slimflat-leadpackage.(1.4mm×0.8mm×0.6mm)

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

SiliconNPNEpitaxialVHF/UHFwidebandamplifier

Features •Supercompactpackage;(1.4×0.8×0.59mm) •Capablelowvoltageoperation;(VCE=1V)

HitachiHitachi Semiconductor

日立日立公司

Hitachi

SiliconNPNEpitaxialVHF/UHFwidebandamplifier

Features •Supercompactpackage;(1.4×0.8×0.59mm) •Capablelowvoltageoperation;(VCE=1V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

SiliconNPNEpitaxialVHF/UHFwidebandamplifier

Features •Supercompactpackage;(1.4×0.8×0.59mm) •Capablelowvoltageoperation;(VCE=1V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

SiliconNPNEpitaxialVHF/UHFwidebandamplifier

Features •Supercompactpackage;(1.4×0.8×0.59mm) •Capablelowvoltageoperation;(VCE=1V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

SiliconNPNEpitaxialVHF/UHFwidebandamplifier

Features •Supercompactpackage;(1.4×0.8×0.59mm) •Capablelowvoltageoperation;(VCE=1V)

HitachiHitachi Semiconductor

日立日立公司

Hitachi

SiliconNPNEpitaxialVHF/UHFwidebandamplifier

Features •Supercompactpackage;(1.4×0.8×0.59mm) •Capablelowvoltageoperation;(VCE=1V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

SiliconNPNEpitaxialVHF/UHFwidebandamplifier

Features •Supercompactpackage;(1.4×0.8×0.59mm) •Capablelowvoltageoperation;(VCE=1V)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

SiliconNPNEpitaxialVHF/UHFwidebandamplifier

Features •Excellentintermodulationcharacteristic •Highpowergainandlownoisefigure;PG=16dBtyp.,NF=1.1dBtyp.atf=900MHz

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

SiliconNPNEpitaxialVHF/UHFwidebandamplifier

Features •Excellentintermodulationcharacteristic •Highpowergainandlownoisefigure;PG=16dBtyp.,NF=1.1dBtyp.atf=900MHz

HitachiHitachi Semiconductor

日立日立公司

Hitachi

SiliconNPNEpitaxialVHF/UHFwidebandamplifier

Features •Excellentintermodulationcharacteristic •Highpowergainandlownoisefigure;PG=16dBtyp.,NF=1.1dBtyp.atf=900MHz

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

SiliconNPNtriplediffusionmesatype(Forhorizontaldeflectionoutput)

Forhorizontaldeflectionoutput ■Features •Highbreakdownvoltage,andhighreliabilitythroughtheuseofaglasspassivationlayer •High-speedswitching •Widesafeoperationarea

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

HorizontalDeflectionTransistorSeriesforTV

■Overview Basedonaccumulatedmanufacturingtechnology,thesehorizontaldeflectiontransistorsforTVsofferhighperformanceandcompactdesign.Theycanalsowithstandhighvoltageandmaintainlowloss.Theyalsohaveabroadareaofsafeoperation,despiteanabsolutelyminimalchipareaw

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNTRIPLEDIFFUSEDTYPE(SWITCHINGREGULATOR,HIGHVOLTAGESWITCHING,DC-DCCONVERTERAPPLICATIONS)

HighVoltageSwitchingApplications SwitchingRegulatorApplications DC-DCConverterApplications •Highspeedswitching:tr=0.5µs(max),tf=0.3µs(max)(IC=0.8A) •Highcollectorbreakdownvoltage:VCEO=370V •HighDCcurrentgain:hFE=60(min)(IC=0.2A)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNTRIPLEDIFFUSEDTYPE(SWITCHINGREGULATOR,HIGHVOLTAGESWITCHING,DC-DCCONVERTERAPPLICATIONS)

HighVoltageSwitchingApplications SwitchingRegulatorApplications DC-DCConverterApplications •Highspeedswitching:tr=0.5µs(max),tf=0.3µs(max)(IC=0.8A) •Highcollectorbreakdownvoltage:VCEO=400V •HighDCcurrentgain:hFE=40(min)(IC=0.2A)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNTRIPLEDIFFUSEDTYPE(HIGHSPEEDSWITCHINGAPPLICATIONSFORINVERTERLIGHTINGSYSTEM)

High-SpeedSwitchingApplicationforInverterLightingSystem •SuitableforRCCcircuits.(guaranteedsmallcurrenthFE) :hFE=13(min)(IC=1mA) •Highspeed:tr=0.5μs(max),tf=0.3μs(max)(IC=0.24A) •Highbreakdownvoltage:VCEO=400V

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

ForHighFrequencyAmplifyApplicationSiliconNPNEpitaxialType

文件:60.72 Kbytes Page:4 Pages

ISAHAYAIsahaya Electronics Corporation

谏早电子谏早电子株式会社

ISAHAYA

HighVoltageSwitchingApplications

文件:202.47 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

HighVoltageSwitchingApplications

文件:202.47 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

iscSiliconNPNPowerTransistor

文件:302.16 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

HighVoltageSwitchingApplications

文件:196.9 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

HighVoltageSwitchingApplications

文件:196.9 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNTransistors

文件:1.19021 Mbytes Page:3 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

High-SpeedSwitchingApplicationforInverterLighting

文件:150 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

封装/外壳:TO-226-3,TO-92-3 长体 包装:散装 描述:TRANS NPN 400V 1A TO92MOD 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

High-SpeedSwitchingApplicationforInverterLighting

文件:150 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NPNPlasticEncapsulatedTransistor

文件:224.82 Kbytes Page:2 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

2SC554产品属性

  • 类型

    描述

  • 型号

    2SC554

  • 制造商

    Toshiba

  • 功能描述

    NPN 370V 2A 50 to 120 PW-Mold

更新时间:2025-7-23 18:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
25+
原装
32000
RENESAS/瑞萨全新特价2SC5545ZS-TL-E即刻询购立享优惠#长期有货
长电
2021
SOT-89
13000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
CJ江苏长电
21+
SOT-89-3L
7000
原装现货假一赔十
CJ/长晶
24+
NA/
180000
优势代理渠道,原装正品,可全系列订货开增值税票
CJ长电
25+
SOT-89-3L
4000
原厂原装,价格优势
TOSHIBA/东芝
2024
TO-252
503106
16余年资质 绝对原盒原盘代理渠道 更多数量
TOSHIBA/东芝
专业铁帽
CAN3
5600
原装铁帽专营,代理渠道量大可订货
SANYO/三洋
2450+
SOT723
6540
只做原装正品现货或订货!终端客户免费申请样品!
长晶科技
21+
SOT-89-3L
920
全新原装鄙视假货
CJ/长电
21+
SOT-89
230000
百域芯优势 实单必成 可开13点增值税发票

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