SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Low Saturation Voltage High Speed Switching

功率三极管

100V,2A,General Purpose NPN Bipolar Transistor

晶体管

SOT-89-3L Plastic-Encapsulate Transistors

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NPN Plastic Encapsulated Transistor

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UHF to S Band Low-Noise Amplifier and OSC Applications

UHF to S Band Low-Noise Amplifier and OSC Applications Features · High cutoff frequency : fT=10GHz typ. · High gain : S21e2=13dB typ (f=1GHz). · Low noise : NF=1.3dB typ (f=1GHz). · Small Cob : Cob=0.4pF typ. · Ultrasmall, slim flat-lead package. (1.4mm × 0.8mm × 0.6mm)

UHF to S Band Low-Noise Amplifier Applications

UHF to S Band Low-Noise Amplifier Applications Features · Low noise : NF=1.2dB typ (f=2GHz). · High gain : S21e2=10dB typ (f=2GHz). · High cutoff frequency : fT=13GHz typ. · Ultrasmall, slim flat-lead package. (1.4mm × 0.8mm × 0.6mm)

Silicon NPN Epitaxial VHF / UHF wide band amplifier

Features • Super compact package; (1.4 × 0.8 × 0.59mm) • Capable low voltage operation ; (VCE = 1V)

Silicon NPN Epitaxial VHF / UHF wide band amplifier

Features • Super compact package; (1.4 × 0.8 × 0.59mm) • Capable low voltage operation ; (VCE = 1V)

Silicon NPN Epitaxial VHF / UHF wide band amplifier

Features • Super compact package; (1.4 × 0.8 × 0.59mm) • Capable low voltage operation ; (VCE = 1V)

Silicon NPN Epitaxial VHF / UHF wide band amplifier

Features • Super compact package; (1.4 × 0.8 × 0.59mm) • Capable low voltage operation ; (VCE = 1V)

Silicon NPN Epitaxial VHF / UHF wide band amplifier

Features • Super compact package; (1.4 × 0.8 × 0.59mm) • Capable low voltage operation ; (VCE = 1V)

Silicon NPN Epitaxial VHF / UHF wide band amplifier

Features • Super compact package; (1.4 × 0.8 × 0.59mm) • Capable low voltage operation ; (VCE = 1V)

Silicon NPN Epitaxial VHF / UHF wide band amplifier

Features • Super compact package; (1.4 × 0.8 × 0.59mm) • Capable low voltage operation ; (VCE = 1V)

Silicon NPN Epitaxial VHF / UHF wide band amplifier

Features • Excellent inter modulation characteristic • High power gain and low noise figure ; PG=16dB typ. , NF=1.1dB typ. at f=900MHz

Silicon NPN Epitaxial VHF / UHF wide band amplifier

Features • Excellent inter modulation characteristic • High power gain and low noise figure ; PG=16dB typ. , NF=1.1dB typ. at f=900MHz

Silicon NPN Epitaxial VHF / UHF wide band amplifier

Features • Excellent inter modulation characteristic • High power gain and low noise figure ; PG=16dB typ. , NF=1.1dB typ. at f=900MHz

Silicon NPN triple diffusion mesa type(For horizontal deflection output)

For horizontal deflection output ■ Features • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide safe operation area

Horizontal Deflection Transistor Series for TV

■ Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe operation, despite an absolutely minimal chip area w

NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER APPLICATIONS)

High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • High speed switching: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 0.8 A) • High collector breakdown voltage: VCEO = 370 V • High DC current gain: hFE = 60 (min) (IC = 0.2 A)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER APPLICATIONS)

High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • High speed switching: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 0.8 A) • High collector breakdown voltage: VCEO = 400 V • High DC current gain: hFE = 40 (min) (IC = 0.2 A)

NPN TRIPLE DIFFUSED TYPE (HIGH SPEED SWITCHING APPLICATIONS FOR INVERTER LIGHTING SYSTEM)

High-Speed Switching Application for Inverter Lighting System • Suitable for RCC circuits. (guaranteed small current hFE) : hFE = 13 (min) (IC = 1 mA) • High speed: tr = 0.5 μs (max), tf = 0.3 μs (max) (IC = 0.24 A) • High breakdown voltage: VCEO = 400 V

For High Frequency Amplify Application Silicon NPN Epitaxial Type

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High Voltage Switching Applications

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High Voltage Switching Applications

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High Voltage Switching Applications

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isc Silicon NPN Power Transistor

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High Voltage Switching Applications

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NPN Transistors

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High-Speed Switching Application for Inverter Lighting

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封装/外壳：TO-226-3，TO-92-3 长体 包装：散装 描述：TRANS NPN 400V 1A TO92MOD 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High-Speed Switching Application for Inverter Lighting

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NPN Plastic Encapsulated Transistor

文件：224.82 Kbytes Page：2 Pages