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2SC554晶体管资料

  • 2SC554别名:2SC554三极管、2SC554晶体管、2SC554晶体三极管

  • 2SC554生产厂家:日本东芝公司

  • 2SC554制作材料:Si-NPN

  • 2SC554性质:超高频/特高频 (UHF)_宽频带放大 (A)_TR_输出

  • 2SC554封装形式:直插封装

  • 2SC554极限工作电压:36V

  • 2SC554最大电流允许值:0.5A

  • 2SC554最大工作频率:400MHZ

  • 2SC554引脚数:3

  • 2SC554最大耗散功率

  • 2SC554放大倍数

  • 2SC554图片代号:C-40

  • 2SC554vtest:36

  • 2SC554htest:400000000

  • 2SC554atest:0.5

  • 2SC554wtest:0

  • 2SC554代换 2SC554用什么型号代替:BFR97,BFR98,BFS23,BFX33,BLX65,3DA106B,

型号 功能描述 生产厂家 企业 LOGO 操作
2SC554

丝印代码:C554;SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Low Saturation Voltage High Speed Switching

DGNJDZ

南晶电子

2SC554

丝印代码:C554;NPN Plastic Encapsulated Transistor

文件:224.82 Kbytes Page:2 Pages

SECOS

喜可士

2SC554

SOT-89-3L Plastic-Encapsulate Transistors

文件:1.61858 Mbytes Page:4 Pages

JIANGSU

长电科技

2SC554

功率三极管

YJYCOIN

益嘉源

2SC554

100V,2A,General Purpose NPN Bipolar Transistor

GALAXY

银河微电

2SC554

晶体管

JSCJ

长晶科技

UHF to S Band Low-Noise Amplifier and OSC Applications

UHF to S Band Low-Noise Amplifier and OSC Applications Features · High cutoff frequency : fT=10GHz typ. · High gain : S21e2=13dB typ (f=1GHz). · Low noise : NF=1.3dB typ (f=1GHz). · Small Cob : Cob=0.4pF typ. · Ultrasmall, slim flat-lead package. (1.4mm × 0.8mm × 0.6mm)

SANYO

三洋

UHF to S Band Low-Noise Amplifier Applications

UHF to S Band Low-Noise Amplifier Applications Features · Low noise : NF=1.2dB typ (f=2GHz). · High gain : S21e2=10dB typ (f=2GHz). · High cutoff frequency : fT=13GHz typ. · Ultrasmall, slim flat-lead package. (1.4mm × 0.8mm × 0.6mm)

SANYO

三洋

Silicon NPN Epitaxial VHF / UHF wide band amplifier

Features • Super compact package; (1.4 × 0.8 × 0.59mm) • Capable low voltage operation ; (VCE = 1V)

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial VHF / UHF wide band amplifier

Features • Super compact package; (1.4 × 0.8 × 0.59mm) • Capable low voltage operation ; (VCE = 1V)

RENESAS

瑞萨

Silicon NPN Epitaxial VHF / UHF wide band amplifier

Features • Super compact package; (1.4 × 0.8 × 0.59mm) • Capable low voltage operation ; (VCE = 1V)

RENESAS

瑞萨

Silicon NPN Epitaxial VHF / UHF wide band amplifier

Features • Super compact package; (1.4 × 0.8 × 0.59mm) • Capable low voltage operation ; (VCE = 1V)

RENESAS

瑞萨

Silicon NPN Epitaxial VHF / UHF wide band amplifier

Features • Super compact package; (1.4 × 0.8 × 0.59mm) • Capable low voltage operation ; (VCE = 1V)

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial VHF / UHF wide band amplifier

Features • Super compact package; (1.4 × 0.8 × 0.59mm) • Capable low voltage operation ; (VCE = 1V)

RENESAS

瑞萨

Silicon NPN Epitaxial VHF / UHF wide band amplifier

Features • Super compact package; (1.4 × 0.8 × 0.59mm) • Capable low voltage operation ; (VCE = 1V)

RENESAS

瑞萨

Silicon NPN Epitaxial VHF / UHF wide band amplifier

Features • Excellent inter modulation characteristic • High power gain and low noise figure ; PG=16dB typ. , NF=1.1dB typ. at f=900MHz

RENESAS

瑞萨

Silicon NPN Epitaxial VHF / UHF wide band amplifier

Features • Excellent inter modulation characteristic • High power gain and low noise figure ; PG=16dB typ. , NF=1.1dB typ. at f=900MHz

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial VHF / UHF wide band amplifier

Features • Excellent inter modulation characteristic • High power gain and low noise figure ; PG=16dB typ. , NF=1.1dB typ. at f=900MHz

RENESAS

瑞萨

Silicon NPN triple diffusion mesa type(For horizontal deflection output)

For horizontal deflection output ■ Features • High breakdown voltage, and high reliability through the use of a glass passivation layer • High-speed switching • Wide safe operation area

PANASONIC

松下

Horizontal Deflection Transistor Series for TV

■ Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe operation, despite an absolutely minimal chip area w

PANASONIC

松下

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER APPLICATIONS)

High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • High speed switching: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 0.8 A) • High collector breakdown voltage: VCEO = 370 V • High DC current gain: hFE = 60 (min) (IC = 0.2 A)

TOSHIBA

东芝

NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER APPLICATIONS)

High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • High speed switching: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 0.8 A) • High collector breakdown voltage: VCEO = 400 V • High DC current gain: hFE = 40 (min) (IC = 0.2 A)

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

NPN TRIPLE DIFFUSED TYPE (HIGH SPEED SWITCHING APPLICATIONS FOR INVERTER LIGHTING SYSTEM)

High-Speed Switching Application for Inverter Lighting System • Suitable for RCC circuits. (guaranteed small current hFE) : hFE = 13 (min) (IC = 1 mA) • High speed: tr = 0.5 μs (max), tf = 0.3 μs (max) (IC = 0.24 A) • High breakdown voltage: VCEO = 400 V

TOSHIBA

东芝

For High Frequency Amplify Application Silicon NPN Epitaxial Type

文件:60.72 Kbytes Page:4 Pages

ISAHAYA

谏早电子

High Voltage Switching Applications

文件:202.47 Kbytes Page:5 Pages

TOSHIBA

东芝

High Voltage Switching Applications

文件:202.47 Kbytes Page:5 Pages

TOSHIBA

东芝

丝印代码:DPAK;isc Silicon NPN Power Transistor

文件:302.16 Kbytes Page:2 Pages

ISC

无锡固电

High Voltage Switching Applications

文件:196.9 Kbytes Page:5 Pages

TOSHIBA

东芝

High Voltage Switching Applications

文件:196.9 Kbytes Page:5 Pages

TOSHIBA

东芝

NPN Transistors

文件:1.19021 Mbytes Page:3 Pages

KEXIN

科信电子

High-Speed Switching Application for Inverter Lighting

文件:150 Kbytes Page:5 Pages

TOSHIBA

东芝

封装/外壳:TO-226-3,TO-92-3 长体 包装:散装 描述:TRANS NPN 400V 1A TO92MOD 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

High-Speed Switching Application for Inverter Lighting

文件:150 Kbytes Page:5 Pages

TOSHIBA

东芝

NPN Plastic Encapsulated Transistor

文件:224.82 Kbytes Page:2 Pages

SECOS

喜可士

2SC554产品属性

  • 类型

    描述

  • PCM(W):

    0.5

  • IC(A):

    2

  • VCBO(V):

    100

  • VCEO(V):

    100

  • VEBO(V):

    6

  • hFEMin:

    82

  • hFEMax:

    270

  • hFE@VCE(V):

    3

  • hFE@IC(A):

    0.1

  • VCE(sat)(V):

    0.2

  • VCE(sat)\u001E@IC(A):

    0.5

  • VCE(sat)\u001E@IB(A):

    0.025

  • Package:

    SOT-89-3L

更新时间:2026-5-17 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
2016+
SOT-143
3000
只做原装,假一罚十,公司可开17%增值税发票!
MITSUBISHI/三菱
2023+
SOT89
7725
一级代理优势现货,全新正品直营店
TOSHIBA
25+23+
SOT-252
11666
绝对原装正品全新进口深圳现货
RENESAS瑞萨/HITACHI日立
24+
SOT-143SOT-23-4
9200
新进库存/原装
长电
25+
SOT-89
9000
只做原装正品 有挂有货 假一赔十
TOSHIBA
26+
TO-252
9526
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
TOSHIBA
24+
TO-92
5000
全新原装正品,现货销售
TOSHIBA
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
UTC
23+
SOT89
5000
原装正品,假一罚十
HITACHI
19+
0603-3
20000
3500

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