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位置：首页 > IC中文资料 > 2SC5508

2SC5508价格

参考价格：￥2.7396

型号：2SC5508-T2-A 品牌：CEL 备注：这里有2SC5508多少钱，2026年最近7天走势，今日出价，今日竞价，2SC5508批发/采购报价，2SC5508行情走势销售排行榜，2SC5508报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SC5508

NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB, Ga= 16 dB TYP. @f = 2 GHz, VCE= 2 V, IC= 5 mA • Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, V

NEC

瑞萨

2SC5508

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19

RENESAS

瑞萨

2SC5508

RF Tranasitor

The UTC 2SC5508 is an NPN silicon RF transistor, it uses UTC’sadvanced technology to provide customers with low-noise, etc.The UTC 2SC5508 is suitable for low-noise, high-gainamplification applications. Maximum available power gain: MAG=19dB TYP. @ VCE=2V,IC=20mA, f=2GHz fT=25GHz technology adopted;

UTC

友顺

2SC5508

Small Signal Silicon Bipolars

Silicon NPN transistor, 1.3dB noise figure, 15dB gain (Same as NE662M04)

RENESAS

瑞萨

2SC5508-A

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19

RENESAS

瑞萨

2SC5508-T2

NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB, Ga= 16 dB TYP. @f = 2 GHz, VCE= 2 V, IC= 5 mA • Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, V

NEC

瑞萨

2SC5508-T2

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19

RENESAS

瑞萨

2SC5508-T2

NPN SILICON RF TRANSISTOR / FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLDFEATURES\n• Ideal for low-noise, high-gain amplification applications\n• NF = 1.1 dB, Ga= 16 dB TYP. @f = 2 GHz, VCE= 2 V, IC= 5 mA\n• Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, VCE= • Ideal for low-noise, high-gain amplification applications\n• NF = 1.1 dB, Ga= 16 dB TYP. @f = 2 GHz, VCE= 2 V, IC= 5 mA\n• Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, VCE= 2 V, IC= 20 mA\n•fT= 25 GHz technology\n• Flat-lead 4-pin thin super mini-mold (t = 0.59 mm) ;

RENESAS

瑞萨

2SC5508-T2-A

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19

RENESAS

瑞萨

2SC5508-T2B

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19

RENESAS

瑞萨

2SC5508-T2B-A

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19

RENESAS

瑞萨

2SC5508_15

NPN SILICON RF TRANSISTOR

文件：229.94 Kbytes Page：10 Pages

RENESAS

瑞萨

2SC5508-A

封装/外壳：SOT-343F 包装：托盘 描述：RF TRANS NPN 3.3V 25GHZ SOT343F 分立半导体产品 晶体管 - 双极（BJT）- 射频

CEL

2SC5508-T2-A

封装/外壳：SC-82A，SOT-343 包装：托盘 描述：RF TRANS NPN 3.3V 25GHZ SOT343F 分立半导体产品 晶体管 - 双极（BJT）- 射频

CEL

2SC5508产品属性

  • 类型

    描述

  • BVCEO(V)：

    33

  • BVCBO(V)：

    15

  • IC(A)：

    0.035

  • HFE_MIN.：

    50

  • HFE_MAX.：

    100

  • HFE test_IC(mA)：

    5

  • HFE test_VCE(V)：

    2.0

  • ft  (GHz)_TYP：

    25

  • ft  (GHz)test_VCE：

    3

  • ft  (GHz)test_IC(mA)：

    30

  • ft  (GHz)test_f(GHz)：

    2

  • Package：

    SOT-363

2SC5508供应商更多...

更新时间：2026-7-22 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
2SC5508-T2-A
Renesas(瑞萨)
24+
标准封装
12048
支持大陆交货,美金交易。原装现货库存。
询价
中天科工半导体（深圳）有限公司
2SC5508-T2B-A
RENESAS/瑞萨
25+
SOT343
12514
RENESAS/瑞萨原装特价2SC5508-T2B-A即刻询购立享优惠#长期有货
询价
深圳市正纳电子有限公司
2SC5508-T2-A
Renesas(瑞萨)
26+
原厂封装
32078
10年以上分销商,原装进口件,服务型企业
询价
深圳市中飞凌科技有限公司
2SC5508-T2B-A
RENESAS
26+
假一赔十
360000
进口原装现货
询价
深圳市金华微盛电子有限公司
2SC5508-T2-A
NEC
2019+
SOT323-4
36000
原盒原包装 可BOM配套
询价
柒号芯城电子商务(深圳)有限公司
2SC5508-T2B
RENESAS
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
深圳市创新迹电子有限公司
2SC5508-T2
NEC
2021+
SOT343
9000
原装现货,随时欢迎询价
询价
贸泽芯城（深圳）电子科技有限公司
2SC5508-T2-A
NEC
23+
SOT-343
3000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市科翼源电子有限公司
2SC5508-T2B-A
RENESAS
23+
SOT343
7600
原厂原装正品
询价
深圳市上美通科技有限公司
2SC5508-T2B-A
Renesas
17+
SOT-343
45000
全新原装正品
询价

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