NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB, Ga= 16 dB TYP. @f = 2 GHz, VCE= 2 V, IC= 5 mA • Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, V

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19

RF Tranasitor

The UTC 2SC5508 is an NPN silicon RF transistor, it uses UTC’sadvanced technology to provide customers with low-noise, etc.The UTC 2SC5508 is suitable for low-noise, high-gainamplification applications. Maximum available power gain: MAG=19dB TYP. @ VCE=2V,IC=20mA, f=2GHz fT=25GHz technology adopted;

Small Signal Silicon Bipolars

Silicon NPN transistor, 1.3dB noise figure, 15dB gain (Same as NE662M04)

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19

NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB, Ga= 16 dB TYP. @f = 2 GHz, VCE= 2 V, IC= 5 mA • Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, V

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19

NPN SILICON RF TRANSISTOR / FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLDFEATURES\n• Ideal for low-noise, high-gain amplification applications\n• NF = 1.1 dB, Ga= 16 dB TYP. @f = 2 GHz, VCE= 2 V, IC= 5 mA\n• Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, VCE= • Ideal for low-noise, high-gain amplification applications\n• NF = 1.1 dB, Ga= 16 dB TYP. @f = 2 GHz, VCE= 2 V, IC= 5 mA\n• Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, VCE= 2 V, IC= 20 mA\n•fT= 25 GHz technology\n• Flat-lead 4-pin thin super mini-mold (t = 0.59 mm) ;

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19

NPN SILICON RF TRANSISTOR

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封装/外壳：SOT-343F 包装：托盘 描述：RF TRANS NPN 3.3V 25GHZ SOT343F 分立半导体产品 晶体管 - 双极（BJT）- 射频

封装/外壳：SC-82A，SOT-343 包装：托盘 描述：RF TRANS NPN 3.3V 25GHZ SOT343F 分立半导体产品 晶体管 - 双极（BJT）- 射频