型号 功能描述 生产厂家 企业 LOGO 操作
2SC5509-A

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga= 12 dB TYP. @ VCE= 2 V, IC= 10 mA, f = 2 GHz • Maximum available

RENESAS

瑞萨

2SC5509-A

封装/外壳:SOT-343F 包装:托盘 描述:RF TRANS NPN 3.3V 15GHZ SOT343F 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR FORMEDIUM OUTPUT POWER LOW NOISE HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga= 12 dB TYP. @ VCE= 2 V, IC= 10 mA, f = 2 GHz • Maximum available power gain: MAG = 14 dB

NEC

瑞萨

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz • Maximum available power gain: M

CEL

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga= 12 dB TYP. @ VCE= 2 V, IC= 10 mA, f = 2 GHz • Maximum available

RENESAS

瑞萨

更新时间:2025-12-26 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ROHM
2016+
TO220
9000
只做原装,假一罚十,公司可开17%增值税发票!
NEC
24+
NA/
4050
原装现货,当天可交货,原型号开票
NEC
18+
SOT-343
800
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NEC
20+
SOT343
49000
原装优势主营型号-可开原型号增税票
ROHM
25+
TO220
2650
原装优势!绝对公司现货
ROHM/罗姆
25+
TO-220F
880000
明嘉莱只做原装正品现货
ROHM
25+23+
TO-220
46328
绝对原装正品现货,全新深圳原装进口现货
ROHM/罗姆
22+
TO-220
8000
原装正品支持实单
ROHM/罗姆
TO220
125000
一级代理原装正品,价格优势,长期供应!
ROHM
24+
TO-220
251

2SC5509-A数据表相关新闻