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型号 功能描述 生产厂家 企业 LOGO 操作
2SC5507

NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA • Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA • fT = 25 GHz technology • Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)

NEC

瑞萨

2SC5507

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 2 mA, f = 2 GHz • Maximum stable power gain: MSG

RENESAS

瑞萨

2SC5507

NPN Silicon Rf Transistor For Low Current, Low-Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold (M04)

The 2SC5507 is a NPN Silicon Rf Transistor For Low Current, Low-Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold (M04).

RENESAS

瑞萨

NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

FEATURES\n• Low noise and high gain with low collector current\n• NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA\n• Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA\n• fT = 25 GHz technology\n• Flat-lead 4-pin thin super mini-mold (t = 0.59 mm) • Low noise and high gain with low collector current\n• NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA\n• Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA\n• fT = 25 GHz technology\n• Flat-lead 4-pin thin super mini-mold (t = 0.59 mm) ;

RENESAS

瑞萨

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 2 mA, f = 2 GHz • Maximum stable power gain: MSG

RENESAS

瑞萨

NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA • Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA • fT = 25 GHz technology • Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)

NEC

瑞萨

2SC5507产品属性

  • 类型

    描述

  • 型号

    2SC5507

  • 制造商

    Renesas Electronics Corporation

  • 功能描述

    Cut Tape

更新时间:2026-5-15 17:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
2450+
SOT343
8850
只做原装正品假一赔十为客户做到零风险!!
SOT-343
23+
NA
15659
振宏微专业只做正品,假一罚百!
NEC
25+23+
SOT343
42298
绝对原装正品现货,全新深圳原装进口现货
RENESAS/瑞萨
25+
SOT343
15000
全新原装现货,价格优势
NEC
24+
SOT-343SOT-323-4
7470
新进库存/原装
NEC
22+
SOT343
20000
公司只有原装 品质保证
NEC
2223+
SOT343
26800
只做原装正品假一赔十为客户做到零风险
NEC
04+
SOT343
12060
全新 发货1-2天
NEC
2019+
SOT323-4
36000
原盒原包装 可BOM配套
NEC
26+
LQFP-48
86720
全新原装正品价格最实惠 假一赔百

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