NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA • Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA • fT = 25 GHz technology • Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 2 mA, f = 2 GHz • Maximum stable power gain: MSG

NPN Silicon Rf Transistor For Low Current, Low-Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold (M04)

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 2 mA, f = 2 GHz • Maximum stable power gain: MSG

NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA • Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA • fT = 25 GHz technology • Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)

NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD