NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4550 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·Low collector saturation voltage ·High speed switching APPLICATIONS ·Suited for use in drivers such as DC-DC converters and actuators

SILICON POWER TRANSISTOR

The 2SC4550 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduct

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·High DC Current Gain- : hFE= 100(Min)@ (VCE= 2V , IC= 1.5A) ·Low Saturation Voltage- : VCE(sat)= 0.3V(Max)@ (IC= 4A, IB= 0.2A) B APPLICATIONS ·Designed for use as a driver in DC/DC converters

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus) 60V(Min) • High DC Current Gain- : hFE= 100(Min)@ (VCE= 2V , Ic= 1.5A) • Low Saturation Voltage- : VCE(sat)= 0.3V(Max)@ (Ic= 4A, |B= 0.2A) APPLICATIONS • Designed for use as a driver in DC/DC converters and actuators.

SILCON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

SILCON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4550 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation t

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4551 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insula

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4551 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat): 0.3V(Max) @IC= 6A APPLICATIONS · DC/DC Converters · Converters · Power Amplifiers

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SC4551 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-mold • High hFE and low VCE(sat): hFE ≥ 100 (VCE = 2 V, IC = 2 A) VCE(sat) ≤ 0.3 V (IC = 6 A, IB = 0.3 A)\n• Mold package that does not require an insulating board or insulation bushing;

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SC4552 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-mold • High hFE and low VCE(sat): hFE ≥ 100 (VCE = 2 V, IC = 3 A) VCE(sat) ≤ 0.3 V (IC = 8 A, IB = 0.4 A)\n• Mold package that does not require an insulating board or insulation bushing;

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·High DC Current Gain- : hFE= 100(Min)@ (VCE= 2V, IC= 3A) ·Low Saturation Voltage- : VCE(sat)= 0.3V(Max)@ (IC= 8A, IB= 0.4A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4552 is a power transistor developed for high-speed switching and features low VCE(sat)and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation ty

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High hFEand low VCE(sat) APPLICATIONS • For high-speed switching • For use in drivers such as DC-DC converters and actuators.

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High hFEand low VCE(sat) APPLICATIONS • For high-speed switching • For use in drivers such as DC-DC converters and actuators.

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus)= 60V(Min) • High DC Current Gain- : hFE= 100(Min)@ (VCE= 2V, lc= 3A) • Low Saturation Voltage- : VCE(sat)= 0.3V(Max)@ (lc= 8A, IB= 0.4A) APPLICATIONS • Designed for use as a driver in DC/DC converters and actuators.

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4552 is a power transistor developed for high-speed switching and features low VCE(sat)and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation ty

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4553 is a power transistor designed especially for low collector saturation voltage and features large current switching at a low power dissipation. In addition, a high hFE enables alleviation of the driver load. FEATURES

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4553 is a power transistor designed especially for low collector saturation voltage and features large current switching at a low power dissipation. In addition, a high hFE enables alleviation of the driver load. FEATURES • High h

NPN SILICON EPITAXIAL TRANSISTOR FOR SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR FOR SWITCHING The 2SC4554 is a power transistor designed especially for low collector saturation voltage and features large current switching at a low power dissipation. In addition, a high hFE enables alleviation of the driver load. FEATURES • High hFE and low

2SC4554

SILICON POWER TRANSISTOR

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR SWITCHING The 2SC4554 is a power transistor designed especially for low collector saturation voltage and features large current switching at a low power dissipation. In addition, a high hFE enables alleviation of the driver load. FEATURES • High hFE

Low-Frequency General-Purpose Amp Applications

Low-Frequency General-Purpose Amplifier Applications Features • Very small-sized package permitting the 2SA1745 2SC4555-applied set to be made small and slim. • Low collector-to-emitter saturation voltage.

NPN Epitaxial Planar Silicon Transistor

Features Very small-sized package Low collector-to-emitter saturation voltage.

Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High voltage switchihg transistor APPLICATIONS ·For switching regulator and general purpose applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PML package ·High voltage switchihg transistor APPLICATIONS ·For switching regulator and general purpose applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·High speed switching ·High VCEO APPLICATIONS ·For high breakdown voltage ,high-speed switching applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·High speed switching ·High VCEO APPLICATIONS ·For high breakdown voltage ,high-speed switching applications

Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

For high breakdown voltage high-speed switching ■ Features • High-speed switching • High collector-emitter voltage (Base open) VCEO • Full-pack package which can be installed to the heat sink with one screw

Silicon NPN Power Transistors

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功率三极管

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Silicon NPN Power Transistors

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Silicon NPN Power Transistors

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封装/外壳：TO-220-3 整包 包装：散装 描述：TRANS NPN 400V 7A TO220F-A1 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个