NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

The 2SC4553 is a power transistor designed especially for low collector saturation voltage and features large current switching at a low power dissipation. In addition, a high hFE enables alleviation of the driver load.

FEATURES

• High hFE and low VCE(sat):

hFE ≅ 800 (VCE = 2 V, IC = 3 A)

VCE(sat) ≅ 0.12 V (IC = 3 A, IB = 0.03 A)

• On-chip C to E damper diode

• Mold package that does not require an insulating board or

insulation bushing