NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4550 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·Low collector saturation voltage ·High speed switching APPLICATIONS ·Suited for use in drivers such as DC-DC converters and actuators

SILICON POWER TRANSISTOR

The 2SC4550 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduct

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·High DC Current Gain- : hFE= 100(Min)@ (VCE= 2V , IC= 1.5A) ·Low Saturation Voltage- : VCE(sat)= 0.3V(Max)@ (IC= 4A, IB= 0.2A) B APPLICATIONS ·Designed for use as a driver in DC/DC converters

SILCON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

SILCON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4550 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation t

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus) 60V(Min) • High DC Current Gain- : hFE= 100(Min)@ (VCE= 2V , Ic= 1.5A) • Low Saturation Voltage- : VCE(sat)= 0.3V(Max)@ (Ic= 4A, |B= 0.2A) APPLICATIONS • Designed for use as a driver in DC/DC converters and actuators.

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SC4550 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-mold • High hFE and low VCE(sat): hFE ≥ 100 (VCE = 2 V, IC = 1.5 A) VCE(sat) ≤ 0.3 V (IC = 4 A, IB = 0.2 A)\n• Mold package that does not require an insulating board or insulation bushing;

Silicon NPN Power Transistors

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SILICON POWER TRANSISTOR

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