NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4553 is a power transistor designed especially for low collector saturation voltage and features large current switching at a low power dissipation. In addition, a high hFE enables alleviation of the driver load. FEATURES • High h

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4553 is a power transistor designed especially for low collector saturation voltage and features large current switching at a low power dissipation. In addition, a high hFE enables alleviation of the driver load. FEATURES

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SC4553 is a power transistor designed especially for low collector saturation voltage and features large current switching at a low power dissipation. In addition, a high hFEE enables alleviation of the driver load. • High hFE and low VCE(sat): hFE ≅ 800 (VCE = 2 V, IC = 3 A) VCE(sat) ≅ 0.12 V (IC = 3 A, IB = 0.03 A)\n• On-chip C to E damper diode\n• Mold package that does not require an insulating board or insulation bushing;

SILICON POWER TRANSISTOR

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