NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4552 is a power transistor developed for high-speed switching and features low VCE(sat)and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation ty

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High hFEand low VCE(sat) APPLICATIONS • For high-speed switching • For use in drivers such as DC-DC converters and actuators.

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High hFEand low VCE(sat) APPLICATIONS • For high-speed switching • For use in drivers such as DC-DC converters and actuators.

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4552 is a power transistor developed for high-speed switching and features low VCE(sat)and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation ty

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus)= 60V(Min) • High DC Current Gain- : hFE= 100(Min)@ (VCE= 2V, lc= 3A) • Low Saturation Voltage- : VCE(sat)= 0.3V(Max)@ (lc= 8A, IB= 0.4A) APPLICATIONS • Designed for use as a driver in DC/DC converters and actuators.

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·High DC Current Gain- : hFE= 100(Min)@ (VCE= 2V, IC= 3A) ·Low Saturation Voltage- : VCE(sat)= 0.3V(Max)@ (IC= 8A, IB= 0.4A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA

Bipolar Power Transistors

Silicon NPN Power Transistors

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SILICON POWER TRANSISTOR

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