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2SC4226晶体管资料
2SC4226别名:2SC4226三极管、2SC4226晶体管、2SC4226晶体三极管
2SC4226生产厂家:日本日电公司
2SC4226制作材料:Si-NPN
2SC4226性质:表面帖装型 (SMD)_甚高频 (VHF)_超高频/特高频
2SC4226封装形式:贴片封装
2SC4226极限工作电压:12V
2SC4226最大电流允许值:0.1A
2SC4226最大工作频率:4.5GHZ
2SC4226引脚数:3
2SC4226最大耗散功率:
2SC4226放大倍数:
2SC4226图片代号:H-15
2SC4226vtest:12
2SC4226htest:4500000000
- 2SC4226atest:0.1
2SC4226wtest:0
2SC4226代换 2SC4226用什么型号代替:BFR106,2SC3775,
2SC4226价格
参考价格:¥0.3100
型号:2SC4226 品牌:RENESAS 备注:这里有2SC4226多少钱,2025年最近7天走势,今日出价,今日竞价,2SC4226批发/采购报价,2SC4226行情走势销售排行榜,2SC4226报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
2SC4226 | HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTORSUPERMINIMOLD DESCRIPTION The2SC4226isalowsupplyvoltagetransistordesignedforVHF,UHFlownoiseamplifier. Itissuitableforahighdensitysurfacemountassemblysincethetransistorhasbeenappliedsmallminimoldpackage. FEATURES •LowNoise NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7 | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | ||
2SC4226 | NPNSiliconEpitaxialTransistor Features ●Lownoiseandhighgain. NF=1.2dBTyp.@VCE=3V,IC=7mA,f=1.0GHz ●Highgain. |S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | ||
2SC4226 | NPNSiliconPlasticEncapsulatedTransistor FEATURE •The2SC4226isaLowsupplyvoltagetransistor designedforVHF,UHFlownoiseamplifier •Suitableforahighdensitysurfacemountassembly sincethetransistorhasbeenapplied smallminimoldpackage | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | ||
2SC4226 | NPNSiliconRFTransistorNPNEpitaxialSiliconRFTransistorforHigh-FrequencyLow-NoiseAmplification3-pinsuperMinimold NPNEpitaxialSiliconRFTransistorforHigh-FrequencyLow-NoiseAmplification3-pinsuperMinimold DESCRIPTION TheNE85630/2SC4226isalowsupplyvoltagetransistordesignedforVHF,UHFlownoiseamplifier.Itissuitableforahighdensitysurfacemountassemblysincethetransistorhasbe | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | ||
2SC4226 | NPNSiliconEpitaxialPlanarTransistor FEATURES ●Lownoise. ●Highgain. ●Powerdissipation.(PC=150mW) APPLICATIONS ●Highfrequencylownoiseamplifier. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | ||
2SC4226 | NPNSILICONRFTRANSISTOR NPNSILICONRFTRANSISTOR Externalbipolarprocess,withhighpowergainLownoisecharacteristics.Theadoptionofsubmit-niatureSOT-323package,Especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFlownoiseamplifier. Feature Highgain:︱S21e︱2TYP.Va | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | ||
2SC4226 | iscSiliconNPNPowerTransistor DESCRIPTION •LowCollectorCurren-IC=0.1A •LowCollectorPower—Pc=0.1W WithSOT-323Package •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Designedforbroadbandlownoiseamplifier; widebandlownoiseamplifie | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
2SC4226 | SiliconTransistor NPNSILICONEPITAXIALTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINTHIN-TYPESMALLMINIMOLDPACKAGE | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | ||
2SC4226 | SiliconTransistor NPNSILICONEPITAXIALTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINTHIN-TYPESMALLMINIMOLDPACKAGE | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | ||
2SC4226 | NPNSiliconEpitaxialPlanarTransistor 文件:258.519 Kbytes Page:3 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | ||
2SC4226 | 2SC4226isanultra-highfrequencylow-noisetransistor,usingplanarNPNsiliconoutside 文件:685.71 Kbytes Page:5 Pages | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | ||
NPNSILICONRFTRANSISTOR NPNSILICONRFTRANSISTOR Externalbipolarprocess,withhighpowergainLownoisecharacteristics.Theadoptionofsubmit-niatureSOT-323package,Especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFlownoiseamplifier. Feature Highgain:︱S21e︱2TYP.Va | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
NPNSILICONRFTRANSISTOR NPNSILICONRFTRANSISTOR Externalbipolarprocess,withhighpowergainLownoisecharacteristics.Theadoptionofsubmit-niatureSOT-323package,Especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFlownoiseamplifier. Feature Highgain:︱S21e︱2TYP.Va | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
NPNSILICONRFTRANSISTOR NPNSILICONRFTRANSISTOR Externalbipolarprocess,withhighpowergainLownoisecharacteristics.Theadoptionofsubmit-niatureSOT-323package,Especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFlownoiseamplifier. Feature Highgain:︱S21e︱2TYP.Va | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
NPNSILICONRFTRANSISTOR NPNSILICONRFTRANSISTOR Externalbipolarprocess,withhighpowergainLownoisecharacteristics.Theadoptionofsubmit-niatureSOT-323package,Especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFlownoiseamplifier. Feature Highgain:︱S21e︱2TYP.Va | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
NPNSILICONRFTRANSISTOR NPNSILICONRFTRANSISTOR Externalbipolarprocess,withhighpowergainLownoisecharacteristics.Theadoptionofsubmit-niatureSOT-323package,Especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFlownoiseamplifier. Feature Highgain:︱S21e︱2TYP.Va | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
NPNSiliconRFTransistorNPNEpitaxialSiliconRFTransistorforHigh-FrequencyLow-NoiseAmplification3-pinsuperMinimold NPNEpitaxialSiliconRFTransistorforHigh-FrequencyLow-NoiseAmplification3-pinsuperMinimold DESCRIPTION TheNE85630/2SC4226isalowsupplyvoltagetransistordesignedforVHF,UHFlownoiseamplifier.Itissuitableforahighdensitysurfacemountassemblysincethetransistorhasbe | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
NPNSiliconRFTransistorNPNEpitaxialSiliconRFTransistorforHigh-FrequencyLow-NoiseAmplification3-pinsuperMinimold NPNEpitaxialSiliconRFTransistorforHigh-FrequencyLow-NoiseAmplification3-pinsuperMinimold DESCRIPTION TheNE85630/2SC4226isalowsupplyvoltagetransistordesignedforVHF,UHFlownoiseamplifier.Itissuitableforahighdensitysurfacemountassemblysincethetransistorhasbe | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
NPNSiliconEpitaxialPlanarTransistor FEATURES Lownoise. Highgain. Powerdissipation.(PC=150mW) APPLICATIONS Highfrequencylownoiseamplifier. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | |||
NPNSiliconEpitaxialPlanarTransistor 文件:258.519 Kbytes Page:3 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
NPNSiliconEpitaxialPlanarTransistor 文件:258.62 Kbytes Page:3 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
封装/外壳:SC-70,SOT-323 包装:托盘 描述:RF TRANS NPN 12V 4.5GHZ SC70-3 分立半导体产品 晶体管 - 双极(BJT)- 射频 | CEL California Eastern Labs | |||
封装/外壳:SC-70,SOT-323 包装:托盘 描述:RF TRANS NPN 12V 4.5GHZ SOT323 分立半导体产品 晶体管 - 双极(BJT)- 射频 | CEL California Eastern Labs |
2SC4226产品属性
- 类型
描述
- 型号
2SC4226
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NEC(日电) |
10+ |
SC-70 |
1000 |
原装现货17377264928微信同号 |
|||
NEC |
24+ |
原厂封装 |
1005 |
原装现货假一罚十 |
|||
NEC |
2023+ |
SOT-323 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
蓝箭/NEC |
SOT323 |
200000 |
2012 |
||||
Renesas(瑞萨) |
24+ |
标准封装 |
11548 |
支持大陆交货,美金交易。原装现货库存。 |
|||
有强/YQ |
24+ |
NA/ |
300975 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
23+ |
SMD |
618000 |
明嘉莱只做原装正品现货 |
||||
N/A |
09+ |
SOT-23 |
100 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS/瑞萨 |
25+ |
SOT-323 |
20300 |
RENESAS/瑞萨原装特价2SC4226-T1B-A即刻询购立享优惠#长期有货 |
|||
NEC |
21+ |
SOT-323 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
2SC4226规格书下载地址
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