2SC4226晶体管资料

  • 2SC4226别名:2SC4226三极管、2SC4226晶体管、2SC4226晶体三极管

  • 2SC4226生产厂家:日本日电公司

  • 2SC4226制作材料:Si-NPN

  • 2SC4226性质:表面帖装型 (SMD)_甚高频 (VHF)_超高频/特高频

  • 2SC4226封装形式:贴片封装

  • 2SC4226极限工作电压:12V

  • 2SC4226最大电流允许值:0.1A

  • 2SC4226最大工作频率:4.5GHZ

  • 2SC4226引脚数:3

  • 2SC4226最大耗散功率

  • 2SC4226放大倍数

  • 2SC4226图片代号:H-15

  • 2SC4226vtest:12

  • 2SC4226htest:4500000000

  • 2SC4226atest:0.1

  • 2SC4226wtest:0

  • 2SC4226代换 2SC4226用什么型号代替:BFR106,2SC3775,

2SC4226价格

参考价格:¥0.3100

型号:2SC4226 品牌:RENESAS 备注:这里有2SC4226多少钱,2025年最近7天走势,今日出价,今日竞价,2SC4226批发/采购报价,2SC4226行情走势销售排行榜,2SC4226报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SC4226

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTORSUPERMINIMOLD

DESCRIPTION The2SC4226isalowsupplyvoltagetransistordesignedforVHF,UHFlownoiseamplifier. Itissuitableforahighdensitysurfacemountassemblysincethetransistorhasbeenappliedsmallminimoldpackage. FEATURES •LowNoise NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC
2SC4226

NPNSiliconEpitaxialTransistor

Features ●Lownoiseandhighgain. NF=1.2dBTyp.@VCE=3V,IC=7mA,f=1.0GHz ●Highgain. |S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SC4226

NPNSiliconPlasticEncapsulatedTransistor

FEATURE •The2SC4226isaLowsupplyvoltagetransistor designedforVHF,UHFlownoiseamplifier •Suitableforahighdensitysurfacemountassembly sincethetransistorhasbeenapplied smallminimoldpackage

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
2SC4226

NPNSiliconRFTransistorNPNEpitaxialSiliconRFTransistorforHigh-FrequencyLow-NoiseAmplification3-pinsuperMinimold

NPNEpitaxialSiliconRFTransistorforHigh-FrequencyLow-NoiseAmplification3-pinsuperMinimold DESCRIPTION TheNE85630/2SC4226isalowsupplyvoltagetransistordesignedforVHF,UHFlownoiseamplifier.Itissuitableforahighdensitysurfacemountassemblysincethetransistorhasbe

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SC4226

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●Lownoise. ●Highgain. ●Powerdissipation.(PC=150mW) APPLICATIONS ●Highfrequencylownoiseamplifier.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
2SC4226

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTOR Externalbipolarprocess,withhighpowergainLownoisecharacteristics.Theadoptionofsubmit-niatureSOT-323package,Especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFlownoiseamplifier. Feature Highgain:︱S21e︱2TYP.Va

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY
2SC4226

iscSiliconNPNPowerTransistor

DESCRIPTION •LowCollectorCurren-IC=0.1A •LowCollectorPower—Pc=0.1W WithSOT-323Package •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Designedforbroadbandlownoiseamplifier; widebandlownoiseamplifie

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC4226

SiliconTransistor

NPNSILICONEPITAXIALTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINTHIN-TYPESMALLMINIMOLDPACKAGE

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SC4226

SiliconTransistor

NPNSILICONEPITAXIALTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINTHIN-TYPESMALLMINIMOLDPACKAGE

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SC4226

NPNSiliconEpitaxialPlanarTransistor

文件:258.519 Kbytes Page:3 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
2SC4226

2SC4226isanultra-highfrequencylow-noisetransistor,usingplanarNPNsiliconoutside

文件:685.71 Kbytes Page:5 Pages

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTOR Externalbipolarprocess,withhighpowergainLownoisecharacteristics.Theadoptionofsubmit-niatureSOT-323package,Especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFlownoiseamplifier. Feature Highgain:︱S21e︱2TYP.Va

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTOR Externalbipolarprocess,withhighpowergainLownoisecharacteristics.Theadoptionofsubmit-niatureSOT-323package,Especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFlownoiseamplifier. Feature Highgain:︱S21e︱2TYP.Va

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTOR Externalbipolarprocess,withhighpowergainLownoisecharacteristics.Theadoptionofsubmit-niatureSOT-323package,Especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFlownoiseamplifier. Feature Highgain:︱S21e︱2TYP.Va

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTOR Externalbipolarprocess,withhighpowergainLownoisecharacteristics.Theadoptionofsubmit-niatureSOT-323package,Especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFlownoiseamplifier. Feature Highgain:︱S21e︱2TYP.Va

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTOR Externalbipolarprocess,withhighpowergainLownoisecharacteristics.Theadoptionofsubmit-niatureSOT-323package,Especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFlownoiseamplifier. Feature Highgain:︱S21e︱2TYP.Va

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY

NPNSiliconRFTransistorNPNEpitaxialSiliconRFTransistorforHigh-FrequencyLow-NoiseAmplification3-pinsuperMinimold

NPNEpitaxialSiliconRFTransistorforHigh-FrequencyLow-NoiseAmplification3-pinsuperMinimold DESCRIPTION TheNE85630/2SC4226isalowsupplyvoltagetransistordesignedforVHF,UHFlownoiseamplifier.Itissuitableforahighdensitysurfacemountassemblysincethetransistorhasbe

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNSiliconRFTransistorNPNEpitaxialSiliconRFTransistorforHigh-FrequencyLow-NoiseAmplification3-pinsuperMinimold

NPNEpitaxialSiliconRFTransistorforHigh-FrequencyLow-NoiseAmplification3-pinsuperMinimold DESCRIPTION TheNE85630/2SC4226isalowsupplyvoltagetransistordesignedforVHF,UHFlownoiseamplifier.Itissuitableforahighdensitysurfacemountassemblysincethetransistorhasbe

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

NPNSiliconEpitaxialPlanarTransistor

FEATURES Lownoise. Highgain. Powerdissipation.(PC=150mW) APPLICATIONS Highfrequencylownoiseamplifier.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN

NPNSiliconEpitaxialPlanarTransistor

文件:258.519 Kbytes Page:3 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

NPNSiliconEpitaxialPlanarTransistor

文件:258.62 Kbytes Page:3 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

封装/外壳:SC-70,SOT-323 包装:托盘 描述:RF TRANS NPN 12V 4.5GHZ SC70-3 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

California Eastern Labs

CEL

封装/外壳:SC-70,SOT-323 包装:托盘 描述:RF TRANS NPN 12V 4.5GHZ SOT323 分立半导体产品 晶体管 - 双极(BJT)- 射频

CEL

California Eastern Labs

CEL

2SC4226产品属性

  • 类型

    描述

  • 型号

    2SC4226

  • 制造商

    Panasonic Industrial Company

  • 功能描述

    TRANSISTOR

更新时间:2025-7-31 8:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC(日电)
10+
SC-70
1000
原装现货17377264928微信同号
NEC
24+
原厂封装
1005
原装现货假一罚十
NEC
2023+
SOT-323
8800
正品渠道现货 终端可提供BOM表配单。
蓝箭/NEC
SOT323
200000
2012
Renesas(瑞萨)
24+
标准封装
11548
支持大陆交货,美金交易。原装现货库存。
有强/YQ
24+
NA/
300975
优势代理渠道,原装正品,可全系列订货开增值税票
23+
SMD
618000
明嘉莱只做原装正品现货
N/A
09+
SOT-23
100
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS/瑞萨
25+
SOT-323
20300
RENESAS/瑞萨原装特价2SC4226-T1B-A即刻询购立享优惠#长期有货
NEC
21+
SOT-323
9800
只做原装正品假一赔十!正规渠道订货!

2SC4226芯片相关品牌

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