HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied small mini mold package. FEATURES • Low Noise NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7

NPN Silicon Epitaxial Transistor

Features ● Low noise and high gain. NF = 1.2 dB Typ. @VCE = 3V, IC = 7 mA, f = 1.0 GHz ● High gain. |S21e| 2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA

NPN Silicon Plastic Encapsulated Transistor

FEATURE • The 2SC4226 is a Low supply voltage transistor designed for VHF, UHF low noise amplifier • Suitable for a high density surface mount assembly since the transistor has been applied small mini mold package

NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold

NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold DESCRIPTION The NE85630 / 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has be

NPN Silicon Epitaxial Planar Transistor

FEATURES ● Low noise. ● High gain. ● Power dissipation.(PC=150mW) APPLICATIONS ● High frequency low noise amplifier.

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR External bipolar process, with high power gain Low noise characteristics. The adoption of submit-niature SOT- 323 package, Especially suitable for high density surface patch installation, mainly for the VHF, UHF low noise amplifier. Feature High gain:︱S21e︱2 TYP. Va

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Curren -IC= 0.1A • Low Collector Power—Pc=0.1W With SOT-323 Package • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for broadband low noise amplifier ; wideband low noise amplifie

Silicon Transistor

NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

Silicon Transistor

NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

NPN Silicon Epitaxial Planar Transistor

文件：258.519 Kbytes Page：3 Pages

2SC4226 is an ultra-high frequency low-noise transistor, using planar NPN silicon outside

文件：685.71 Kbytes Page：5 Pages

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR External bipolar process, with high power gain Low noise characteristics. The adoption of submit-niature SOT- 323 package, Especially suitable for high density surface patch installation, mainly for the VHF, UHF low noise amplifier. Feature High gain:︱S21e︱2 TYP. Va

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR External bipolar process, with high power gain Low noise characteristics. The adoption of submit-niature SOT- 323 package, Especially suitable for high density surface patch installation, mainly for the VHF, UHF low noise amplifier. Feature High gain:︱S21e︱2 TYP. Va

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR External bipolar process, with high power gain Low noise characteristics. The adoption of submit-niature SOT- 323 package, Especially suitable for high density surface patch installation, mainly for the VHF, UHF low noise amplifier. Feature High gain:︱S21e︱2 TYP. Va

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR External bipolar process, with high power gain Low noise characteristics. The adoption of submit-niature SOT- 323 package, Especially suitable for high density surface patch installation, mainly for the VHF, UHF low noise amplifier. Feature High gain:︱S21e︱2 TYP. Va

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR External bipolar process, with high power gain Low noise characteristics. The adoption of submit-niature SOT- 323 package, Especially suitable for high density surface patch installation, mainly for the VHF, UHF low noise amplifier. Feature High gain:︱S21e︱2 TYP. Va

NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold

NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold DESCRIPTION The NE85630 / 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has be

NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold

NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold DESCRIPTION The NE85630 / 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has be

NPN Silicon Epitaxial Planar Transistor

FEATURES Low noise. High gain. Power dissipation.(PC=150mW) APPLICATIONS High frequency low noise amplifier.

NPN Silicon Epitaxial Planar Transistor

文件：258.519 Kbytes Page：3 Pages

NPN Silicon Epitaxial Planar Transistor

文件：258.62 Kbytes Page：3 Pages

封装/外壳：SC-70，SOT-323 包装：托盘 描述：RF TRANS NPN 12V 4.5GHZ SC70-3 分立半导体产品 晶体管 - 双极（BJT）- 射频

封装/外壳：SC-70，SOT-323 包装：托盘 描述：RF TRANS NPN 12V 4.5GHZ SOT323 分立半导体产品 晶体管 - 双极（BJT）- 射频