丝印代码：R25；NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR External bipolar process, with high power gain Low noise characteristics. The adoption of submit-niature SOT- 323 package, Especially suitable for high density surface patch installation, mainly for the VHF, UHF low noise amplifier. Feature High gain:︱S21e︱2 TYP. Va

晶体三极管

NPN Silicon Plastic Encapsulated Transistor

FEATURE • The 2SC4226 is a Low supply voltage transistor designed for VHF, UHF low noise amplifier • Suitable for a high density surface mount assembly since the transistor has been applied small mini mold package

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied small mini mold package. FEATURES • Low Noise NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7

NPN Silicon Epitaxial Transistor

Features ● Low noise and high gain. NF = 1.2 dB Typ. @VCE = 3V, IC = 7 mA, f = 1.0 GHz ● High gain. |S21e| 2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA

NPN Silicon Epitaxial Planar Transistor

FEATURES Low noise. High gain. Power dissipation.(PC=150mW) APPLICATIONS High frequency low noise amplifier.

NPN Silicon Epitaxial Planar Transistor

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