NPN Silicon RF Transistor

NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super MinimoldDESCRIPTION\nThe 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.It is suitable for a high density surface mount assembly since the transistor has been applied 3-pi •  Low noise : NF = 1.2 dB TYP. @ VCE= 3 V, IC= 7 mA, f = 1 GHz\n•  High gain : ⏐S21e⏐2= 9 dB TYP. @ VCE= 3 V, IC= 7 mA, f = 1 GHz\n•  3-pin super minimold package;

封装/外壳：SC-70，SOT-323 包装：托盘 描述：RF TRANS NPN 12V 4.5GHZ SC70-3 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN Silicon Plastic Encapsulated Transistor

FEATURE • The 2SC4226 is a Low supply voltage transistor designed for VHF, UHF low noise amplifier • Suitable for a high density surface mount assembly since the transistor has been applied small mini mold package

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied small mini mold package. FEATURES • Low Noise NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7

NPN Silicon Epitaxial Transistor

Features ● Low noise and high gain. NF = 1.2 dB Typ. @VCE = 3V, IC = 7 mA, f = 1.0 GHz ● High gain. |S21e| 2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA

NPN Silicon Epitaxial Planar Transistor

FEATURES Low noise. High gain. Power dissipation.(PC=150mW) APPLICATIONS High frequency low noise amplifier.

NPN Silicon Epitaxial Planar Transistor

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